Datasheet

UNISONIC TECHNOLOGIES CO., LTD
25N20
Power MOSFET
25A, 200V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET

DESCRIPTION
The UTC 25N20 is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.

FEATURES
* RDS(ON) < 160 mΩ @ VGS =10V, ID =16A
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N20L-TF3-T
25N20G-TF3-T
25N20L-TF1-T
25N20G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
TO-220F
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-A84.D
25N20

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
200
V
Gate Source Voltage
VGSS
±20
V
Continuous Drain Current
TC =25°C
ID
25
A
(VGS=10V)
ID
15.86
A
TC = 100°C
Pulsed Drain Current (Note 2)
IDM
80
A
Total Power Dissipation
PD
50
W
(TC =25°C)
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature.

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
SYMBOL
BVDSS
TEST CONDITIONS
VGS =0V, ID =250µA
MIN
200
∆BVDSS/∆TJ Reference to 25°C , ID =1mA
IDSS
TYP MAX UNIT
V
0.14
VDS =100V, VGS =0V, TJ=25°C
VDS =80V, VGS =0V,TJ =150°C
VGS =±20V
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS =10V, ID =16A
Forward Transconductance
gFS
VDS =10V, ID =16A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time1
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, ID=0.5A, RG=25mΩ,
VGS=10V, RD=3.125Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge (Note)
QG
VGS=10V, VDS=50V, ID=1.3A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS =25A, VGS =0V
Reverse Recovery Time
tRR
IS =25A,VGS =0V,
dI/dt=100A/µs
Reverse Recovery Charge
QRR
V/°C
1
100
±100
µA
µA
nA
4
160
V
mΩ
S
1000 1700
240
25
pF
pF
pF
56
75
240
100
35
8
9.7
ns
ns
ns
ns
nC
nC
nC
2
112
14
40
1.3
90
380
V
ns
nC
Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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25N20

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-A84.D
25N20

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
D.U.T.
10V
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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25N20
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

Power MOSFET
200
150
100
200
150
100
50
50
0
0
0
2
4
5
1
3
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
40
80
120 160 200 240
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A84.D
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