LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.56 Inch) LDD535/65-XX/NDP DATA SHEET DOC. NO : QW0905- LDD535/65-XX/NDP REV. : A DATE : 09 - Dec - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LDD535/65-XX/NDP Package Dimensions 25.0(0.984") DIG.1 8.0(0.315") DIG.2 14.2 (0.56") 19.0 (0.748") 15.24 (0.60") ψ1.5(0.059") A LDD535/65-XX/NDP LIGITEK F G B E C D DP 4.4±0.5 0.51 TYP. 2.54X8=20.32 (0.8") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD535/65-XX/NDP Page 2/7 Internal Circuit Diagram LDD5355-XX/NDP 13 14 DIG.1 DIG.2 A B C D E F G 16 15 3 2 1 18 17 A B C D E F G 11 10 8 6 5 12 7 LDD5365-XX/NDP 14 DIG.1 A B C D E F G 16 15 3 2 1 18 17 13 DIG.2 A B C D E F G 11 10 8 6 5 12 7 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD535/65-XX/NDP Page 3/7 Electrical Connection PIN NO.1 LDD5355-XX/NDP PIN NO.1 LDD5365-XX/NDP 1 Anode E DIG.1 1 Cathode E DIG.1 2 Anode D DIG.1 2 Cathode D DIG.1 3 Anode C DIG.1 3 Cathode C DIG.1 4 Nc 4 Nc 5 Anode E DIG.2 5 Cathode E DIG.2 6 Anode D DIG.2 6 Cathode D DIG.2 7 Anode G DIG.2 7 Cathode G DIG.2 8 Anode C DIG.2 8 Cathode C DIG.2 9 Nc 9 Nc 10 Anode B DIG.2 10 Cathode B DIG.2 11 Anode A DIG.2 11 Cathode A DIG.2 12 Anode F DIG.2 12 Cathode F DIG.2 13 Common Cathode Dig.2 13 Common Anode Dig.2 14 Common Cathode Dig.1 14 Common Anode Dig.1 15 Anode B DIG.1 15 Cathode B DIG.1 16 Anode A DIG.1 16 Cathode A DIG.1 17 Anode G DIG.1 17 Cathode G DIG.1 18 Anode F DIG.1 18 Cathode F DIG.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LDD535/65-XX/NDP Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO λP (nm) △λ Vf(v) (nm) Iv(mcd) Min. Typ. Max. Min. 1.5 1.7 IV-M Typ. Common Anode LDD5355-XX/NDP GaAlAs LDD5365-XX/NDP Electrical 660 Red 20 Common Cathode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.4 3.05 5.0 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LDD535/65-XX/NDP Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Emission Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LDD535/65-XX/NDP Typical Electro-Optical Characteristics Current SR CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LDD535/65-XX/NDP Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃ &-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11