KSM2804 KERSMI ELECTRONIC CO.,LTD 40V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 40V 1) 2) 3) 4) RDSON ID 2MΩ 75A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 280 Continuous Drain Current-T=100℃ 200 Pulsed Drain Current2 1080 EAS Single Pulse Avalanche Energy3 670 PD Power Dissipation4 330 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM2804 KERSMI ELECTRONIC CO.,LTD 40V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 RƟJA Thermal Resistance, Junction to Ambient1 Units 0.45 ℃/W 40 Package Marking and Ordering Information Part NO. Marking Package KSM2804 KSM2804 TO-220 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 40 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 20 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — 1.5 2.0 VDS=2.5V,ID=5A — 1.8 2.3 VDS=5V,ID=12A 130 — — — 6450 — — 1690 — — 840 — — 13 — — 120 — — 130 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 130 — Qg Total Gate Charge — 160 — Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 41 — Qgd Gate-Drain “Miller” Charge ID=6A — 66 — ns ns ns ns nC nC nC — — 1.3 V — 56 84 ns — 67 100 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM2804 KERSMI ELECTRONIC CO.,LTD 40V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.kersemi.com 3 KSM2804 KERSMI ELECTRONIC CO.,LTD 40V N-channel MOSFET Fig5.Typical Capacitance vs. Voltage Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig6.Typical Gate Charge vs. Drain-to-Source Fig 8. Maximum Safe Operating Area Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4 KSM2804 KERSMI ELECTRONIC CO.,LTD 40V N-channel MOSFET www.kersemi.com 5