KSMN4488 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 30V RDSON ID 22MΩ 7.9A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. Sop-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 7.9 Continuous Drain Current-T=100℃ 40 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 2.5 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +175 ID A mJ W ℃ Thermal Characteristics Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 50 RƟJA Thermal Resistance, Junction to Ambient1 25 www.kersemi.com Units ℃/W 1 KSMN4488 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMN4488 KSMN4488 SOT-223 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 1 1.8 3 V VDS=10V,ID=6A — 15 22 VDS=2.5V,ID=5A — 21 30 VDS=5V,ID=12A — 20 — — 927 — — 241 — — 97 — — 7.4 15 — 7.5 15 — 25 40 — 5 10 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics — 9.5 13 Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.3 — Gate-Drain “Miller” Charge ID=6A — 3.1 — ns ns ns ns nC nC nC — 0.7 1.2 V — 22 — ns — 20 — nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: www.kersemi.com 2 KSMN4488 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics. unless otherwise noted Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.kersemi.com 3 KSMN4488 KERSMI ELECTRONIC CO.,LTD. 30V Figure 7. Gate Charge Characteristics. N-channel MOSFET Figure 8. Maximum Safe Operating Area. Figure 9. Transient Thermal Response Curve www.kersemi.com 4