Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PMBT3904
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 12
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
FEATURES
QUICK REFERENCE DATA
• Collector current capability IC = 200 mA
SYMBOL
• Collector-emitter voltage VCEO = 40 V.
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
200
mA
APPLICATIONS
• General switching and amplification.
PINNING
PIN
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT3906.
DESCRIPTION
1
base
2
emitter
3
collector
MARKING
TYPE NUMBER
PMBT3904
handbook, halfpage
MARKING CODE(1)
3
3
*1A
Note
1
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
PMBT3904
−
2004 Jan 12
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
200
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
−
50
nA
hFE
DC current gain
VCE = 1 V; see Fig.2; note 1
IC = 0.1 mA
60
−
IC = 1 mA
80
−
IC = 10 mA
100
300
IC = 50 mA
60
−
IC = 100 mA
VCEsat
VBEsat
30
−
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA
−
200
mV
IC = 50 mA; IB = 5 mA
−
300
mV
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA
−
950
mV
Cc
collector capacitance
IE = Ie = 0; VCB = 5 V; f = 1 MHz
−
4
pF
Ce
emitter capacitance
IC = Ic = 0; VBE = 500 mV;
f = 1 MHz
−
8
pF
2004 Jan 12
3
NXP Semiconductors
Product data sheet
NPN switching transistor
SYMBOL
PMBT3904
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
300
−
MHz
F
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
5
dB
−
35
ns
−
35
ns
Switching times (between 10% and 90% levels); see Fig.3
td
delay time
tr
rise time
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
ts
storage time
−
200
ns
tf
fall time
−
50
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MGU822
MGU821
500
250
handbook, halfpage
handbook, halfpage
IC
(mA)
h FE
400
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
(1)
300
150
(8)
(9)
(2)
200
100
(10)
(3)
100
50
0
10 −1
1
10
102
I C (mA)
0
103
0
2
4
6
8
10
VCE (V)
Tamb = 25 °C.
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1)
(2)
(3)
(4)
IB = 5.5 mA.
IB = 5 mA.
IB = 4.5 mA.
IB = 3.5 mA.
Fig.3
Fig.2 DC current gain; typical values.
2004 Jan 12
4
(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.
(9) IB = 1 mA.
(10) IB = 0.5 mA.
Collector current as a function of
collector-emitter voltage.
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
MGU823
1200
MGU824
1200
handbook, halfpage
handbook, halfpage
VBEsat
VBE
(mV)
1000
(mV)
1000
(1)
(1)
800
800
(2)
600
(3)
(2)
600
(3)
400
400
200
10 −1
1
102
10
I C (mA)
200
10 −1
103
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current.
MGU825
103
handbook, halfpage
VCEsat
(mV)
(1)
(2)
(3)
102
10
10 −1
1
10
102
I C (mA)
103
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current.
2004 Jan 12
5
1
10
102
I C (mA)
Base-emitter saturation voltage as a
function of collector current.
103
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
VBB
handbook, full pagewidth
RB
oscilloscope
VCC
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = −1.9 V; VCC = 3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
2004 Jan 12
6
oscilloscope
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 12
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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that is open for acceptance or the grant, conveyance or
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accepts no liability for inclusion and/or use of NXP
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 12
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp9
Date of release: 2004 Jan 12
Document order number:
9397 750 12461
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