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KSM9530
KERSMI ELECTRONIC CO.,LTD.
-100V
P-channel MOSFETS
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1)
2)
3)
4)
BVDSS
RDSON
-100V
0.3Ω
ID
-12A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-220
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-12
Continuous Drain Current-T=100℃
-8.2
Pulsed Drain Current2
-48
EAS
Single Pulse Avalanche Energy3
400
PD
Power Dissipation4
88
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+175
ID
A
mJ
W
℃
Thermal Characteristics
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KSM9530
KERSMI ELECTRONIC CO.,LTD.
-100V
P-channel MOSFETS
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
62
RƟJA
Thermal Resistance, Junction to Ambient1
1.7
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSM9530
KSM9530
TO-220
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-100
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-100
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-2.0
—
-4.0
V
VDS=10V,ID=6A
—
—
0.3
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
3.7
—
—
—
860
—
—
340
—
—
93
—
—
12
—
—
52
—
—
31
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
39
—
Qg
Total Gate Charge
—
—
38
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
—
6.8
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
—
21
ns
ns
ns
ns
nC
nC
nC
—
—
-6.3
V
—
120
240
ns
—
0.46
0.92
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSM9530
KERSMI ELECTRONIC CO.,LTD.
-100V
P-channel MOSFETS
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
Fig. 1 Typical Output Characteristics,
TC = 25 °
Fig. 2 Typical Transfer Characteristics
Fig. 3 Typical Output Characteristics,
TC = 150 °C
Fig. 4 - Normalized On-Resistance vs.
Temperature
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KSM9530
KERSMI ELECTRONIC CO.,LTD.
-100V
P-channel MOSFETS
Fig. 5 - Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 6 - Typical Source-Drain
Diode Forward Voltage
Fig. 7 - Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 8 - Maximum Safe
Operating Area
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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