KSMD13N10 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 100V 1) 2) 3) 4) RDSON ID 10A 0.18Ω Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-252 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 10 Continuous Drain Current-T=100℃ 6.3 Pulsed Drain Current2 40 EAS Single Pulse Avalanche Energy3 95 PD Power Dissipation4 40 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMD13N10 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 3.13 RƟJA Thermal Resistance, Junction to Ambient1 110 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMD13N10 KSMD13N10 TO-252 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — 0.142 0.18 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 6.3 — — 345 450 — 100 130 — 20 25 — 5 20 — 55 120 — 20 50 On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 25 60 Qg Total Gate Charge — 12 16 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 2.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 5.1 — ns ns ns ns nC nC nC — — 1.5 V — 72 — ns — 0.17 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMD13N10 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature www.kersemi.com 3 KSMD13N10 KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Figure 5. Capacitance Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Gate Charge Characteristics Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4