LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.40 Inch) LSD401/21-XX DATA SHEET DOC. NO : QW0905- LSD401/21-XX REV. : A DATE : 19 - Jan. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD401/21-XX Page 1/7 Package Dimensions 9.8(0.39") PIN NO.1 2.45 2.5 18.75 (0.74") 2.54 10.16 (0.4") 5.04 LSD401/21-XX LIGITEK 2.45 ψ1.5 5.08 (0.2") ψ0.45 TYP. 6.0±0.5 7.4 (0.29") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. 14.98 (0.59") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LSD401/21-XX Internal Circuit Diagram LSD4011-XX 4,12 A B C D E 14 13 8 7 6 F 1 G DP 2 9 LSD4021-XX 4,12 A B C D E 14 13 8 7 6 F 1 G DP 2 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LSD401/21-XX Electrical Connection PIN NO. LSD4011-XX PIN NO. LSD4021-XX 1 Anode F 1 Cathode F 2 Anode G 2 Cathode G 3 No Pin 3 No Pin 4 Common Cathode 4 Common Anode 5 No Pin 5 No Pin 6 Anode E 6 Cathode E 7 Anode D 7 Cathode D 8 Anode C 8 Cathode C 9 Anode DP 9 Cathode DP 10 No Pin 10 No Pin 11 No Pin 11 No Pin 12 Common Cathode 12 Common Anode 13 Anode B 13 Cathode B 14 Anode A 14 Cathode A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO.LSD401/21-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT H Forward Current Per Chip IF 15 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 60 mA Power Dissipation Per Chip PD 40 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO λP (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LSD4011-XX GaP LSD4021-XX Electrical 697 Red 90 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 0.35 0.8 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO.LSD401/21-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LSD401/21-XX Page 6/7 Typical Electro-Optical Characteristics Curve H CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 4.0 5.0 10 1.0 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 700 800 900 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 1000 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO.LSD401/21-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11