LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX LED DISPLAY(3.01Inch) LMD5732AVG-XX DATA SHEET DOC. NO : QW0905- LMD5732AVG-XX REV. : D DATE : 21 - Jan. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LMD5732AVG-XX Package Dimensions 11.43X4=45.72 (1.8") 11.43X6=68.58 (2.7") 79.80 (3.14") 57.2 (2.25") ψ7.62(0.3") 8.9 56.90(2.24") LMD5732AVG-XX LIGITEK Ø 0.5 6.0±0.5 TYP 5.06X6=30.36 (1.2") Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LMD5732AVG-XX Internal Circuit Diagram COLUMN 1 2 3 4 5 ROW PIN 13 3 4,11 10 6 1 9 2 14 3 8 4 5,12 5 1 6 7 7 2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LMD5732AVG-XX Electrical Connection PIN NO.1 LMD5732AVG-XX 1 Cathode Row 5 2 Cathode Row 7 3 Anode Column 2 4 Anode Column 3 5 Cathode Row 4 6 Anode Column 5 7 Cathode Row 6 8 Cathode Row 3 9 Cathode Row 1 10 Anode Column 4 11 Anode Column 3 12 Cathode Row 4 13 Anode Column 1 14 Cathode Row 2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD5732AVG-XX Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT VG Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO LMD5732AVG-XX GaP Green common anode Electrical λP (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 565 30 3.4 4.2 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 5.2 5.0 9.0 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LMD5732AVG-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO.LMD5732AVG-XX Typical Electro-Optical Characteristics Curve VG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) 500 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD5732AVG-XX Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11