Singl e - Ch ip Si G e T r ans c ei ve r Chips et fo r V -ba nd Bac k h aul Applic atio ns fr o m 5 7 to 64 G Hz Applic atio n N ote A N 376 Revision: Rev. 1.0 2014-06-15 RF and P r otecti on D evic es Edition 2014-06-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Application Note Revision History: 2014-06-15 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Application Note AN376, Rev. 1.0 3 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz List of Content, Figures and Tables Table of Content 1 Introduction ........................................................................................................................................ 7 2 About V-Band Backhaul Application................................................................................................ 8 3 3.1 3.2 Infineon V-Band BGT60 RF Front-End Transceiver Chipset ......................................................... 9 Key Features ........................................................................................................................................ 9 Description of BGT60 ......................................................................................................................... 10 4 Typical Measurement Results ......................................................................................................... 11 5 5.1 5.2 Package ............................................................................................................................................. 13 BGT60 in PG-WFWLB-119-1 Package ............................................................................................. 13 Pin Definition and Function ................................................................................................................ 14 6 6.1 BGT60 Evaluation Board ................................................................................................................. 16 Overview of BGT60 Evaluation Board ............................................................................................... 16 7 7.1 7.2 7.3 Performance of BGT60 Transmitter ............................................................................................... 18 rd Measurement Results of 3 -Order Intermodulation Products ........................................................... 21 Measurement Results of VGA and Buffer Amplifier ........................................................................... 22 PPD Power Amplifier – MUX out........................................................................................................ 23 8 8.1 Performance of BGT60 Receiver .................................................................................................... 24 Intercept Point Measurement of Receiver .......................................................................................... 26 9 VCO Signal Generation .................................................................................................................... 27 10 10.1.1 10.1.2 Getting Started with Evaluation Board .......................................................................................... 29 Configuring as Transmitter ................................................................................................................. 29 Configuring as Receiver ..................................................................................................................... 31 11 Authors .............................................................................................................................................. 32 Application Note AN376, Rev. 1.0 4 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz List of Content, Figures and Tables List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Top View (left), Bottom View (right) and Side View of BGT60 in eWLB Package ............................. 13 Dimension of eWLB Package PG-WFWLB-119-1 for BGT60 (left: top view; center: side view; right: bottom view) ....................................................................................................................................... 14 Pin Number Assignment of BGT60 package eWLB PG-WFWLB-119-1 (Top View) ........................ 14 Evaluation Board for BGT60 – Top View ........................................................................................... 16 Evaluation Board for BGT60 – Bottom View ...................................................................................... 17 Output Spectrum of BGT60 at TX Waveguide Port on the evaluation board @ f TX=60.22 GHz (DAC VGA=27)............................................................................................................................................. 18 Measurement Setup used to measure TX Output Spectrum of BGT60 @ f TX=60.2 GHz ................. 19 Linear (PIF/TX=-27 dBm) and Saturated Power variation over Frequency of BGT60 (DAC VGA=63) 19 Linear Gain (PIF/TX=-27 dBm) over Frequency @ DAC VGA=63 ....................................................... 20 Output P1dB over Frequency @ DAC VGA=63 ................................................................................ 20 OIP3 versus Frequency at IF Input Power Level=-27 dBm ............................................................... 21 DAC VGA Setting versus Output Power at different IF Input Power levels (f TX = 60.22 GHz) ........... 22 PPD PA Output Voltage versus Output Power @ f TX=60.22 GHz ..................................................... 23 Receiver Gain over Frequency for BGT60 ......................................................................................... 24 Input P1dB of Receiver @ fRX=60 GHz .............................................................................................. 24 Input P1dB over Frequency of BGT60 Receiver ................................................................................ 25 Noise Figure variation over Frequency for BGT60 ............................................................................ 25 Input IP2 of Receiver over Frequency at PRX-RF=-28 dBm ................................................................. 26 Input IP3 of Receiver over Frequency at PRX-RF = -30 dBm ............................................................... 26 VCO Frequency over Tuning Voltage ................................................................................................ 27 Tuning Sensitivity (Kvco) versus Tuning Voltage ............................................................................... 28 BGT60 Phase Noise Performance over Frequency........................................................................... 28 V-Band SPI-Programmer Main Window and PLL Window ................................................................ 29 Typical Transmitter Settings for the BGT60 ....................................................................................... 30 Typical Receiver Settings for BGT60 ................................................................................................. 31 Application Note AN376, Rev. 1.0 5 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz List of Content, Figures and Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Measurement Results - DC Parameters ............................................................................................ 11 IF Port Features and Sensor Characteristics ..................................................................................... 11 Measurement Results - Transmitter ................................................................................................... 12 Measurement Results – LO Generation............................................................................................. 12 Measurement Results - Receiver ....................................................................................................... 12 Pin Definition and Function ................................................................................................................ 15 Interface Description of BGT60 Application Board ............................................................................ 17 Application Note AN376, Rev. 1.0 6 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Introduction 1 Introduction The smartphone revolution has led to a growing demand in mobile data traffic which subsequently has resulted in increased throughput per user. The high mobile data requirements has led to the deployment of advanced 4G services like Long Term Evolution (LTE) by the mobile network operators and this is expected to grow further in the coming years. LTE and LTE Advanced will provide users with higher data rates which will increase data traffic drastically. The increasing data rate puts an enormous burden on the network operator’s backhaul networks. The bulk of today’s basestation infrastructure is not ready to support the required high data throughput using the existing microwave backhaul techniques. The connection between the basestations is usually planned for lower data rates up to 100 MBit/s which has to be increased significantly to meet the demands for LTE systems. Though optical fiber based backhaul networks can handle a huge data throughput, they are faced with the challenge of easy and cost-effective deployment. The concept of small cells make the deployment of fiber optic based solution even complex and expensive and sometimes even not feasible. This is where the wireless backhaul technology comes into place. A new solution using millimeter wave backhaul opens upto 10 GHz bandwidth in the E-band (71-76 and 81-86 GHz) and 7 GHz bandwidth in the V-band (57– 64 GHz). The high bandwidth and channel spacing offered at these frequencies enables data rates higher than 1 Gbps for video and data service even with simple modulation schemes. Infineon has developed a complete family of packaged RF Transceivers for mobile backhaul applications – supporting both the V-band and E-band frequencies with its BGT60, BGT70 and BGT80 ICs. The modular approach followed by Infineon provides same package dimensions and RF footprint for all the three chipsets which enable customers to quickly setup a radio system at any of the above allowed frequency bands. The highly integrated ICs help to eliminate discrete components, thereby simplifying the customer’s system design and time-to-market. This also helps to reduce the total cost of the mmWave backhaul solutions. The ICs are designed in Infineon´s advanced SiGe:C (Silicon Germanium) technology with device transit frequency of 200 GHz, that enable integration of several mmWave building blocks such as Power Amplifier (PA), Low Noise Amplifier (LNA), Up- and Down-Convertor, Programmable Gain Amplifier (PGA), Voltage Controlled Oscillator (VCO) and more with high performance into a single chip. This technology is proven and fully qualified for other Infineon millimeter- and microwave chipsets already. Furthermore, Infineon is the leading company to house these single chipsets into a plastic Embedded Wafer Level Ball Grid Array (eWLB) package which can be processed in standard SMT flow. In this application note, the performance of Infineon’s fully integrated V-Band Transceiver BGT60 for 57 to 64 GHz on its evaluation board is described in detail. All the measurements presented in this application note are done port-to-port on Infineon’s EVB i.e. Board losses (~2dB) are not dembedded. The measurements are done at backside chip temperature of 45°C. This also causes loss of additional 1dB. For the specifications of BGT60 transceiver IC, please refer the datasheet of BGT60. Application Note AN376, Rev. 1.0 7 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz About V-Band Backhaul Application 2 About V-Band Backhaul Application Solutions using millimeter wave backhaul in the V-Band of 57-64 GHz open up 7 GHz bandwidth for a fullduplex wireless radio link. It allows gigabit data rates with the simplest modulation scheme which minimize linearity requirements of the transmitter power amplifier (PA). With more spectrally efficient modulations, data rates even higher than 10 Gbps can be achieved. Antennas at high frequencies become compact and can provide higher gain than their contemporaries at lower microwave frequencies which can help improve the link condition. A number of requirements for V-Band communication are specified by ETSI within the document ETSI 302 217-3 “Fixed Radio Systems; characteristics and requirements for point-to-point equipment and antennas; Part 3: Equipment operating in frequency bands where both frequency coordinated or uncoordinated deployment might be applied; Harmonizing EN covering the essential requirements of the article 3.2 of the R&TTE directive”. The high atmospheric attenuation around the 60 GHz band due to oxygen absorbtion helps to provide a strong immunity to interference and allows a higher frequency reuse. The ETSI specifications recommend a minimum antenna gain of 30 dBi. For the radio channel arrangements and nominal bandwidth, two different alternatives are considered. The first alternative is defined as “Free system bandwidth, occupying up to the whole band” and In the second case the maximum channel bandwidth is limited to 2.5 GHz with the channel selection defined as (n*50 MHz), where n = [1….50]. Maximum equivalent isotropically radiated power (EIRP) is specified to 55 dBm and a maximum transmitter output power of +10 dBm is specified. A large channel bandwidth with a higher modulation scheme eventually demands higher carrier-to-noise ratio (CNR) which imposes stringent requirements on the high frequency transmitter and receiver design. For example, a typical receiver with 12dB noise figure at the antenna port in a V-Band radio system using 500MHz channel bandwidth and 16-QAM modulation would need about the same minimum receiver signal power level as a system using 1250 MHz BW and FSK to ensure the bit error rate (BER) of 1E-6. The radio link can be either in full-duplex (FDD) or half-duplex (TDD) system configuration. In a FDD V-Band system, any two blocks of frequencies between 57-64 GHz are used for transmission or reception, depending upon the availability of Diplexers. In a TDD system, one BGT60 chip is installed on each side of the link stations. Each chip in a base station can work in the TX or RX mode independently. Application Note AN376, Rev. 1.0 8 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Infineon V-Band BGT60 RF Front-End Transceiver Chipset 3 Infineon V-Band BGT60 RF Front-End Transceiver Chipset 3.1 Key Features BGT60 covers the V-Band frequency range from 57 to 64 GHz Fabricated with Infineon’s advanced Silicon-Germanium (SiGe) technology Housed in Infineon’s Embedded Wafer Level Ball-Grid Array (eWLB) Package BGT60 can be programmed via SPI interface to work either in transmit (TX) or/and receive (RX) mode Zero IF – differential I/Q interface – direct conversion architecture Differential RF transmit output signaling Differential RF receive input signaling Differential intermediate frequency I/Q signaling Peak detector at VGA input at transmit path Peak detector at PA output at transmit path Built-in temperature sensor SPI interface ESD protected device BITE (Built-In-Test Equipment) for self-test and calibration in production at Infineon to verify RF performance Can support TDD or FDD systems Applications: - V-Band from 57 to 64 GHz FDD or TDD systems for telecommunication applications Product Name BGT60 Application Note AN376, Rev. 1.0 Package PG-WFWLB-119-1 9 / 33 Marking BGT60TR11 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz 3.2 Description of BGT60 Currently, different mmWave system implementations based on III/V-compound semiconductor, silicon bipolar or silicon CMOS technologies have been reported. The advancements in SiGe based technologies in the last years have resulted in their increased use for applications in the mmWave regime with their successful deployment in several existing commercial mmWave applications. Infineon has a long history of research & development with SiGe based technologies and the BGT60 transceiver IC is designed with one of Infineons inhouse advanced SiGe bipolar process. The single-chip transceiver chipset BGT60 is manufactured with Infineon’s 200 GHz-fT SiGe-technology and applicable for telecommunication applications in the microwave and mmWave range. Infineon’s 200 GHz Silicon Germanium (SiGe) technology is proven and qualified for Millimeter (e.g. 77 GHz automotive radar) and Microwave chipsets (e.g. 24 GHz automotive/industrial radar). BGT60 uses fully-differential direct conversion architecture for the transmitter and receiver. A Fully-differential (balanced) architecture helps to mitigate the effects of common-mode interference and RF grounding issues, which become extremely critical at higher operating frequencies. Also a differential architecture offers the advantage of reduced even-order harmonics. The direct conversion architecture simplifies the frequency up/down-conversion process and can reduce bulky and expensive off-chip filtering components. Through the direct conversion architecture of the transceiver, the interface between RF and baseband is simplified significantly compared to currently available discrete millimeter wave solutions. Furthermore, the offering of the single chip solution in a eWLB plastic package makes a major difference to the market. With the packaged chipset, customers can save cost and reduce the time-to-market significantly. The outstanding RF performance of SiGe technology – such as deliverable saturated output power of up to 14.5 dBm, a low receiver noise figure of 8 dB and excellent VCO phase noise performance better than -83 dBc/Hz at 100kHz offset – allow designers to implement systems with high modulation schemes up to QAM64 with a sample rate of more than 1 Giga Samples per second (GS/s) or simple systems with QPSK with large bandwidth through channel aggregation. ESD (Electrostatic Discharge) performance of more than 1 kV increases robustness. The low power consumption of less than 2 W for this backhaul transceiver family also allows network operators to reduce related fixed expenses. In general, Infineon’s single-chip V-Band transceiver offers customers the following advantages: - lower production cost - broadband high data rate telecommunication which enable Gbps radio link - compact single chip integration leading to much smaller form factor - excellent device performance - individual VCO centering taking into account process and temperature variation - robust design & insensitivity to interference through direct conversion architecture and fully differential topology - standard plastic package allows industrial assembly and cleaning tool to be used - product family approach with the same foot print i.e. same PCB layout possible for E-Band radios Application Note AN376, Rev. 1.0 10 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Typical Measurement Results 4 Typical Measurement Results In Chapter 4, typical measurement results of the V-Band 57 to 64 GHz transceiver, BGT60 are summarized. Please note that these measurements are performed on the Infineon evaluation board at room temperature. Table 1 Measurement Results - DC Parameters Parameter Symbol Unit Value Voltage Supply Vcc V 3.300 Condition Current Consumption - IC powered on, TX off, RX off ICoff 323 - TX on, RX off ICTX mA 550 @ max power - TX off, RX on ICRX 428 - TX on, RX on ICTRX 635 @ max power The current values are of complete EVB. For BGT60 current consumption only please refer Datasheet. Table 2 IF Port Features and Sensor Characteristics Parameter Symbol Unit Output Power Vs PA Peak Detector Readout Relation Pout dBm * PPD_PA selected via MUXout PPD_PA V (MUX out) * This provides the output power level at the landing pad Value Condition Pout t1 ln( PPD _ PA y0 ) A1 y0 0.8829 A1 0.1867 t1 7.9737 Temperature Sensor Sensitivity Tsense mV/K 5 Load Impedance for Tsense Output IF Input Interface at TX Rsensload MΩ 1 Signaling single-ended differential IF Load Impedance IFload Ω 100 IF Bandwidth IFBW MHz 500 IF Lower Cutoff Frequency IFlow kHz 3 IF Higher Cutoff Frequency IFhigh MHz 500 IF Coupling on Board IF Output Interface at RX AC Signaling differential external Capacitance > 1µF required value to be specified differential IF Load Impedance IFload Ω 400 IF Bandwidth IFBW MHz 500 IF Lower Cutoff Frequency IF Higher Cutoff Frequency IFlow IFhigh kHz MHz 3 500 external Capacitance > 1µF required AC value to be specified IF Coupling on Board I/Q Amplitude Imbalance IQAI dB 0.5 I/Q Phase Imbalance IQPI deg 2 Application Note AN376, Rev. 1.0 11 / 33 Differential, minimum value 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Typical Measurement Results Table 3 Measurement Results - Transmitter Parameter Symbol Frequency TX Output Unit Freq GHz Value 57 Output Signaling 60 Condition 64 differential TX-Port Load Impedance TX load Ω TX Chain Gain GTX dB Output Referred P-1dB OP-1dBTX dBm Saturated Power Psat Output Referred IP3 PA Control Dynamic Range 100 differential 24 29 33 9 11.5 11.5 differential 100 Ω load dBm 11.6 15 14.6 differential 100 Ω load OIP3TX dBm 16.9 20.3 15.7 differential 100 Ω load P_ctrld dB 11.7 LO feed-through Suppression LOs dBc -57 PA Control Step P_ctrls dB 0.1 to 2 Image Rejection IMR dBc 20 Table 4 From one IF port to Waveguide port before LO calibration 6 bits w/o feedback loop Measurement Results – LO Generation Voltage Control Sensitivity Kvco GHz/V 5 2.2 1 @TX output @100kHz Offset PNssb100k dBc/Hz -81 -83.6 -85 SSB @1MHz Offset PNssb1M dBc/Hz -101 -103.8 -105 SSB @10MHz Offset PNssb10M dBc/Hz -122 -124.2 -126 SSB Divider Output Power PDIVout dBm VCO Tuning Voltage Vtune V Phase Noise Table 5 differential 100 Ω load -9 0 5.5 single tuning port Measurement Results - Receiver Parameter Symbol Unit Frequency RX Chain Freq GHz Value 57 60 Condition 64 Input Signaling Conversion Gain CGdiff dB Double-Side-Band Noise Figure NFdsb dB 8.4 8 7.1 Input Referred P-1dB IP-1dBRX dBm -11 -12.5 -13.5 Input Referred IP3 IIP3RX dBm -2.9 -3.5 -4.9 LO Residual Power at the RX Input LOres dBm -52 RF-Port Load Impedance RFload Ω 100 Application Note AN376, Rev. 1.0 12 / 33 17.4 20 22.9 differential differential in 400Ω load at IF Ports differential 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Package 5 Package 5.1 BGT60 in PG-WFWLB-119-1 Package The BGT60 chipset is in eWLB type package PG-WFWLB-119-1 with bump balls of 300µm diameter and 150µm height as shown in Figure 1. The physical dimension of 6.0 x 6.0 mm² with a bump pitch of 500 µm is shown in Figure 2. The maximum height of the package is 0.8 mm with 0.1 mm max planarity variation. The maximum variation of bump coplanarity is 80 µm. On top of the package, Pin 1 is marked by a laser marking. The product name and its production date code are also described there. Package Dimension: 6.0 mm x 6.0 mm x 0.8 mm Figure 1 Top View (left), Bottom View (right) and Side View of BGT60 in eWLB Package For mmWave applications, eWLB offers excellent electrical and thermal characteristics. With a well-engineered design, it offers a comparable loss like a bonding wire package version but has large bandwidth which is required for broadband mmW applications. Furthermore, its outstanding thermal resistance of 15 K/W ensures its proper working even under critical environment. The BGA-like package form enables customers to use industrial standard reflow process to solder it. Application Note AN376, Rev. 1.0 13 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Package Figure 2 Dimension of eWLB Package PG-WFWLB-119-1 for BGT60 (left: top view; center: side view; right: bottom view) 5.2 Pin Definition and Function Figure 3 shows the top view of BGT60 package eWLB PG-WFWLB-119-1 with the pin number assignment. The function of each pin is described in Table 6 below. The ground pins (in black color) are used not only for RF and DC but also as a heat sinker for the BGT60 chipset on the PCB. It has to be noted that the four edge ground pins A1, A12, M1 and M12 are in fact not used in the transceiver IC but it is recommended to connect them to the RF ground for mechanical stability. Top View VCC IF_I_TX VCC IFx_I_TX VCC IF_Q_TX VCC VCC IFx_Q_TX IF_Q_RX 11 IFx_Q_RX GND IF_I_RX IFx_I_RX 12 : VCC GND : GND & Thermal Pads VCC 10 : TX IF Ports GND VCC GND GND GND VCC VCC GND GND GND VCC GND GND GND GND GND GND GND GND GND GND GND GND GND 9 : TX RF Ports 8 : RX IF Ports RX Inx GND TX_Outx 7 : RX RF Ports RX In TX_ Out 6 : Sensor Output Ports GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND VCC VCC GND GND GND GND GND GND GND GND VCC SP4 VCC GND GND GND GND GND VCC VCC VCC SP4 SP3 SP2 SP1 Vtune VCC MUXout D_MOD Div Divx Temp VCC GND SP3 SP2 SP1 Vtune VCC MUXout D_MOD Div Divx Temp GND A B C D E K L M 5 : VCO/PLL Ports 4 : SPI Ports 3 GND 2 1 Figure 3 F G H J Pin Number Assignment of BGT60 package eWLB PG-WFWLB-119-1 (Top View) Application Note AN376, Rev. 1.0 14 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Package Table 6 Pin Definition and Function Pin No. Name Function A3, A4, A11, B4, B10, C3, Vcc F10, F11, F12, G10, G11, G12, L10, M11 DC supply for the transceiver chip – 3.3V K3, L3, M2, M3 Vcc_Temp Supply voltage for the temperature sensor – 3.3V F1, F2 Vcc_VCO Supply voltage for the VCO – 3.3V E1, E2 Vtune VCO tuning voltage D1, D2 SP1 SPI Enable - chip select C1, C2 SP2 SPI Dataout - SPI data sequence (device control board) B1, B2 SP3 SPI Data - SPI data sequence (control board device) A2, B3 SP4 SPI clock G1, G2 MUXout MUX output (PPD_PA or PPD_MOD DC level output) H1, H2 D_MOD Modulator detector output L1, L2 Temp Temperature sensor output – DC voltage J1, J2 Div Frequency divider output K1, K2 DivX Complementary frequency divider output B7 RX_In RF input of receiver B8 RX_Inx Complementary RF input of receiver B11, B12 IFx_I_RX Complementary inphase IF output of receiver C11, C12 IF_I_RX Inphase IF output of receiver D11, D12 IFx_Q_RX Complementary Quadrature IF output of receiver E11, E12 IF_Q_RX Quadrature IF output of receiver L7 TX_Out RF output of transmitter L8 TX_OuTX Complementary RF output of transmitter L11, L12 IF_I_TX Inphase IF input of transmitter K11, K12 IFx_I_TX Complementary inphase IF input of transmitter J11, J12 IF_Q_TX Quadrature IF input of transmitter H11, H12 IFx_Q_TX Complementary Quadrature IF input of transmitter A5, A6, A9, A10, B5, B6, B9, C4, C5, C6, C9, C10, D3, D4, D5, D6, D9, D10, E3, E4, E5, E6, E9, E10, F3, F8, F9, G3, G9, H3, H4, H5, H6, H9, H10, J3, J4, J5, J6, J9, J10, K4, K5, K6, K9, K10, L4, L5, L6, L9, M4, M5, M6, M9, M10 GND Ground and thermal pads A1, A12, M1, M12 GND A1, A12, M1, M12 are electrically not connected in chip but should be connected to ground for mechanical stability. Note: all pins described in the same line need to be connected on the PCB. Application Note AN376, Rev. 1.0 15 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz BGT60 Evaluation Board 6 BGT60 Evaluation Board 6.1 Overview of BGT60 Evaluation Board Figure 4 shows the top view of the evaluation board for BGT60. In addition to the BGT60 chip, the PLL circuit with a reference oscillator is also implemented on the evaluation board as shown in Figure 4. Figure 4 Evaluation Board for BGT60 – Top View Application Note AN376, Rev. 1.0 16 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz BGT60 Evaluation Board Figure 5 Table 7 Evaluation Board for BGT60 – Bottom View Interface Description of BGT60 Application Board Pin Function Description SMA Connectors DMOD Wideband PPD MOD output Envelop tracking detector Muxout Provides DC voltage corresponding to PPD PA or PPD MOD PPD PA or PPD MOD selectable through SPI control IF_I_TX/ IF_Ix_TX Inphase/Complementary I input of transmitter Source impedance at input: differential 100 Ω IF_Q_TX/ IF_Qx_TX Quadrature/Complementary Q input of transmitter Source impedance at input: differential 100 Ω IF_I_RX/ IF_Ix_RX Inphase/Complementary I output of receiver Load impedance at output: differential 400 Ω IF_Q_RX/ IF_Qx_RX Quadrature/Complementary Q output of receiver Load impedance at output differential 400 Ω Transmitter/Receiver WR-15 waveguide WR-15 waveguide RF interface TX/RX Port Application Note AN376, Rev. 1.0 17 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter 7 Performance of BGT60 Transmitter The output spectrum at the TX port of BGT60 is shown in Figure 6. The measurement setup is shown in Figure 7. A Direct Digital Synthesizer (DDS) from Analog Devices (AD9959) is used to generate the IF signals for the transmitter. By adjusting the phase of the I and Q output signals from the DDS an image rejection greater than 50 dBc is achieved at the transmitter output. A V-band smart harmonic mixer is used to measure the output signal. The transmitter output power level is kept low by setting the DAC VGA value to 27 in order not to drive the smart harmonic mixer in compression. The carrier feedthorugh suppression is achieved by sweeping the values of DAC_MOD_I and DAC_MOD_Q registers. LO suppression of >50dB is achieved with this particular setup. Figure 8 shows the linear and saturated output power at the transmitter output between 57-64 GHz. The transmitter gain over frequency is plotted in Figure 9. Figure 10 shows the measured output 1-dB compression point over frequency. Figure 11 shows the measured third order intermodulation performance of the transceiver over frequency. The transmitter output power can be varied by changing the DAC VGA and enabling/disabling the VGA buffer. Figure 12 shows the transmitter performance vs different DAC VGA settings. 10 Fundamental Output Power Level (dBm) 0 -10 -20 -30 LO Leakage -40 Image -50 -60 -70 -80 59.75 59.875 60 60.125 60.25 Frequency (GHz) Figure 6 Output Spectrum of BGT60 at TX Waveguide Port on the evaluation board @ fTX=60.22 GHz (DAC VGA=27) Application Note AN376, Rev. 1.0 18 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter USB 3.3V 0° IF_I_Tx PLL and BGT 60 Control Software Mini USB 180° DDS (Direct Digital Synthesizer) Analog Devices AD9959 IFx_I_Tx BGT60 90° Evaluation IF_Q_Tx Board WR15 Waveguide TX out 270° Smart Harmonic Mixer M1970V Agilent IFx_Q_Tx 5.5V Spectrum Analyzer PXA N9030 Agilent Figure 7 Measurement Setup used to measure TX Output Spectrum of BGT60 @ fTX=60.2 GHz Figure 8 Linear (PIF/TX=-27 dBm) and Saturated Power variation over Frequency of BGT60 (DAC VGA=63) Application Note AN376, Rev. 1.0 19 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter Figure 9 Linear Gain (PIF/TX=-27 dBm) over Frequency @ DAC VGA=63 Figure 10 Output P1dB over Frequency @ DAC VGA=63 Application Note AN376, Rev. 1.0 20 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter 7.1 Measurement Results of 3rd-Order Intermodulation Products Figure 11 OIP3 versus Frequency at IF Input Power Level=-27 dBm Application Note AN376, Rev. 1.0 21 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter 7.2 Measurement Results of VGA and Buffer Amplifier Figure 12 DAC VGA Setting versus Output Power at different IF Input Power levels (f TX = 60.22 GHz) Application Note AN376, Rev. 1.0 22 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter 7.3 PPD Power Amplifier – MUX out Figure 13 PPD PA Output Voltage versus Output Power @ fTX=60.22 GHz Application Note AN376, Rev. 1.0 23 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Receiver 8 Performance of BGT60 Receiver Figure 14 Receiver Gain over Frequency for BGT60 Figure 15 Input P1dB of Receiver @ fRX=60 GHz Application Note AN376, Rev. 1.0 24 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Receiver Figure 16 Input P1dB over Frequency of BGT60 Receiver Figure 17 Noise Figure variation over Frequency for BGT60 Application Note AN376, Rev. 1.0 25 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Receiver 8.1 Intercept Point Measurement of Receiver Figure 18 Input IP2 of Receiver over Frequency at PRX-RF=-28 dBm Figure 19 Input IP3 of Receiver over Frequency at PRX-RF = -30 dBm Application Note AN376, Rev. 1.0 26 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz VCO Signal Generation 9 VCO Signal Generation BGT60 is designed to cover the complete tuning range of 57-64 GHz with 0-5.5 V of tuning voltage. All the chips are tested during production and VCO is centered with the help of divider output signal. Figure 20 shows the tuning range of the VCO. The Tuning sensitivity (Kvco) is in the range of 5 GHz/V to 1.0 GHz/V (covering frequency 57-64 GHz) being higher at lower tuning voltages and lower at higher tuning voltages. The phase noise shown below is measured directly at TX port of the EVB. Figure 20 VCO Frequency over Tuning Voltage Application Note AN376, Rev. 1.0 27 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz VCO Signal Generation Figure 21 Tuning Sensitivity (Kvco) versus Tuning Voltage Figure 22 BGT60 Phase Noise Performance over Frequency Application Note AN376, Rev. 1.0 28 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Getting Started with Evaluation Board 10 Getting Started with Evaluation Board 10.1.1 Configuring as Transmitter To configure BGT60 as transmitter the following steps should be followed: 1) Apply Vcc=6V to the BGT60 board and connect USB cable from PC to the Evaluation Board. The current consumption should be in the range of 315 mA. 2) In the software folder supplied with this transceiver navigate to “E-Band V-Band SPI-Programmer.exe” and double click on it. A window will open as shown in Figure 23 below. Figure 23 V-Band SPI-Programmer Main Window and PLL Window 3) Click on the “PLL” button on top right corner of this window. Another window will open which looks like Figure 23. 4) In this PLL window one can select the appropriate chip i.e. BGT60 or BGT70 or BGT80 from the drop down list. Then enter the required frequency in “LO frequency”. 5) In “Ref Frequency” box just enter the oscillation frequency of the reference used for PLL. In our case its 40 MHz reference. But exact frequency is also mentioned in the datalog or written on the backside of the board. Application Note AN376, Rev. 1.0 29 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Getting Started with Evaluation Board 6) In “R Counter” box one can choose between different divider values >1. It should be noted that the PLL IC ADF4158, which is assembled on the Evaluation Board, accepts maximum PFD frequency of 32 MHz. “Prescaler” should be set to 4/5 and “CP Current” can be set to 2.5 mA. “CP Current” value will change the bandwidth of the loop filter used on the board. 7) After setting everything one should click on the “Green Arrow” in top left side of the PLL window. 8) Before you proceed to this step make sure that there is no IF signal applied to the TX IF inputs. Then in the main window press button. This step will automatically execute the LO leakage calibration and set the right value to the DAC_MOD_Q and DAC_MOD_I registers. The current consumption in this case will jump to 550mA. The typical setting for the Transmitter would look like as shown in Figure 24. After LO calibration is done, IF can be applied to TX IF inputs of BGT60. Figure 24 Typical Transmitter Settings for the BGT60 9) Pressing the “Red Arrow” button will update the chip temperature i.e. reading of the integrated temperature sensor and also display DC voltage at Muxout. The DC voltage at Muxout corresponds to the reading of PPD PA or PPD MOD. One of them can be selected at a time from the drop down list under MUX register. 10) Pressing the “Meter” button this button will give you the approximate power output of the device at its landing pad, when IF is applied on the TX input. The measurement is accurate up to -5 dBm of Application Note AN376, Rev. 1.0 30 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Getting Started with Evaluation Board output power. The power at the output of the transmitter can be controlled by changing the value of DAC_VGA register. 10.1.2 Configuring as Receiver To configure BGT60 as receiver the following steps should be followed: 1) Follow step 1 to 7 from the above Section 10.1.1 2) Then in the main window enable the registers as shown in Figure 25. The supply current will jump to 427 mA. Figure 25 Typical Receiver Settings for BGT60 Application Note AN376, Rev. 1.0 31 / 33 2014-06-15 BGT60 Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Authors 11 Authors Abhiram Chakraborty, System Engineer of Application Engineering Jagjit Singh Bal, Staff Engineer of Application Engineering All the Authors are working in Business Unit “RF and Protection Devices” at Infineon Technologies AG. Application Note AN376, Rev. 1.0 32 / 33 2014-06-15 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN376