Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG2010AEB
20 V, 1 A ultra low VF MEGA
Schottky barrier rectifier in
SOD523 package
Product data sheet
2003 Dec 03
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
FEATURES
PMEG2010AEB
QUICK REFERENCE DATA
• Forward current: 1.0 A
SYMBOL
• Reverse voltage: 20 V
IF
forward current
1
A
VR
reverse voltage
20
V
• Ultra low forward voltage
PARAMETER
MAX.
UNIT
• Ultra small SMD package.
PINNING
APPLICATIONS
PIN
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
DESCRIPTION
1
cathode
2
anode
• Inverse-polarity protection
• Low power consumption applications.
1
2
DESCRIPTION
Top view
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small plastic SMD package.
col001
Marking code: L6.
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
−
PMEG2010AEB
DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD523
RELATED PRODUCTS
TYPE
DESCRIPTION
FEATURE
PMEG2005EB
0.5 A; 20 V very low VF MEGA Schottky rectifier Lower IR in same package
PMEG2010EA
1 A; 20 V very low VF MEGA Schottky rectifier
2003 Dec 03
2
Lower forward current, lower IR SOD323
(SC76)
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
20
V
Ts ≤ 55 °C
−
1.0
A
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5
−
3.5
A
non-repetitive peak forward current
t = 8 ms square wave
−
6
A
−65
+150
°C
note 1
−
150
°C
note 1
−65
+150
°C
VR
continuous reverse voltage
IF
continuous forward current
IFRM
IFSM
Tstg
storage temperature
Tj
junction temperature
Tamb
operating ambient temperature
Note
1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
400
K/W
Rth(j-s)
thermal resistance from junction to
soldering point
notes 2 and 3
75
K/W
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
3. Solder point of cathode tab.
2003 Dec 03
3
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
IR
continuous reverse current
Cd
diode capacitance
CONDITIONS
MAX.
UNIT
IF = 0.1 mA
30
60
mV
IF = 1 mA
80
110
mV
IF = 10 mA
140
190
mV
IF = 100 mA
230
290
mV
IF = 1 000 mA
510
620
mV
VR = 10 V; note 1
0.17
0.6
mA
VR = 20 V; note 1
0.32
1.5
mA
VR = 1 V; f = 1 MHz
19
25
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Dec 03
TYP.
4
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
GRAPHICAL DATA
com001
103
MLE228
5
10halfpage
handbook,
I
R
(μA)
104
IF
(mA)
(1)
102
103
(2)
(1)
(2)
(3)
102
10
10
1
(3)
1
10−1
10−1
0
0.2
0.4
0.6
0
0.8
8
VF (V)
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
com002
30
Cd
(pF)
25
20
15
10
5
0
0
5
10
15
20
VR (V)
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Dec 03
5
16
VR (V)
24
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523V
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523V
2003 Dec 03
REFERENCES
IEC
JEDEC
JEITA
SC-79
6
EUROPEAN
PROJECTION
ISSUE DATE
00-12-07
02-04-19
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 03
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp8
Date of release: 2003 Dec 03
Document order number: 9397 750 11911
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