Datasheet

AON7408
30V N-Channel MOSFET
General Description
Product Summary
• The AON7408 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in general purpose
applications.
VDS
30V
18A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 20mΩ
RDS(ON) (at VGS=4.5V)
< 32mΩ
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
D
DFN 3x3 EP
Bottom View
Top View
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
Pulsed Drain Current
Continuous Drain
Current A
C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Rev.8.0: November 2013
11
Steady-State
Steady-State
W
4.5
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
8
PDSM
TA=70°C
A
10
PD
TC=100°C
V
64
IDSM
TA=70°C
±20
11.5
IDM
TA=25°C
Units
V
18
ID
TC=100°C
Maximum
30
-55 to 150
Typ
25
62
8.8
°C
Max
40
75
11
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS,ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
64
±100
nA
2.1
2.6
V
15.3
20
23.3
30
VGS=4.5V, ID=5A
22.7
32
mΩ
17
1
V
12
A
VGS=10V, ID=10A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
373
VGS=0V, VDS=15V, f=1MHz
Gate Source Charge
Qgd
tD(on)
448
67
VGS=4.5V, VDS=15V, ID=10A
0.6
mΩ
S
pF
pF
41
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
A
0.75
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
pF
1.8
2.8
7.1
8.6
Ω
nC
1.2
nC
Gate Drain Charge
1.6
nC
Turn-On DelayTime
4.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=100A/µs
10.5
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
4.5
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
2.8
ns
15.8
ns
3
ns
12.6
ns
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.8.0: November 2013
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Page 2 of 6
AON7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
6V
10V
VDS=5V
50
12
9
4.5V
ID(A)
ID (A)
40
30
6
20
VGS=3.5V
125°C
3
10
25°C
0
0
0
1
2
3
4
1.5
5
40
2.5
3
3.5
4
4.5
Normalized On-Resistance
1.8
35
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
30
VGS=4.5V
25
20
VGS=10V
15
VGS=10V
1.6
1.4
17
5
2
10
=4.5V
1.2
VGS
1
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
60
1.0E+01
ID=10A
1.0E+00
50
40
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
30
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.8.0: November 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AON7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=15V
ID=10A
500
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
300
200
Coss
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
100
100µs
RDS(ON)
limited
1
0.1
DC
1ms
10ms
TJ(Max)=150°C
Tc=25°C
80
Power (W)
10µs 10µs
10
ID (Amps)
400
TJ(Max)=150°C
Tc=25°C
17
5
2
10
60
40
20
0.01
0
0.1
1
10
100
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note H)
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
(Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJc=11°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.8.0: November 2013
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Page 4 of 6
AON7408
15
25
12
20
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
9
6
3
15
10
5
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.8.0: November 2013
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Page 5 of 6
AON7408
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.8.0: November 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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