Datasheet

AON6413
30V P-Channel MOSFET
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
-30V
-32A
< 8.5mΩ
< 17mΩ
Typical ESD protection
HBM Class 3A
100% UIS Tested
100% Rg Tested
• System/Load Switch, Battery Switch
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
Pin
1
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6413
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current C
Avalanche energy
L=0.1mH
VDS Spike
C
10µs
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: January 2014
IAS
-40
A
EAS
80
mJ
VSPIKE
-36
V
48
Steady-State
Steady-State
W
19
6.2
RθJA
RθJC
W
4
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
A
-17
PDSM
TA=70°C
A
-22
PD
TC=100°C
V
-128
IDSM
TA=70°C
±25
-25
IDM
TA=25°C
Continuous Drain
Current
Units
V
-32
ID
TC=100°C
Maximum
-30
Typ
15
40
2.1
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°C
Max
20
50
2.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
TJ=125°C
±10
µA
-2.1
-2.7
V
6.9
8.5
9.8
12
17
VGS=-4.5V, ID=-10A
12.9
Forward Transconductance
VDS=-5V, ID=-16A
-47
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
µA
-5
-1.6
VGS=-10V, ID=-16A
gFS
Units
-1
TJ=55°C
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
-1
V
-32
A
2142
pF
474
pF
363
pF
2.3
4.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
41
58
nC
Qg(4.5V) Total Gate Charge
18.5
27
nC
Qgs
Gate Source Charge
Qgd
f=1MHz
VGS=-10V, VDS=-15V, ID=-16A
15
nC
Gate Drain Charge
6
nC
tD(on)
Turn-On DelayTime
13
ns
tr
Turn-On Rise Time
12
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=-10V, VDS=-15V, RL=0.9Ω,
RGEN=3Ω
34
ns
18.5
ns
IF=-16A, dI/dt=500A/µs
17.5
Body Diode Reverse Recovery Charge IF=-16A, dI/dt=500A/µs
44.5
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-10V
-7V
VDS=-5V
-5V
60
-4.5V
-ID(A)
-ID (A)
60
40
40
-4V
125°C
20
20
25°C
VGS=-3.5V
0
0
0
1
2
3
4
0
5
1
18
3
4
5
6
1.6
12
Normalized On-Resistance
15
RDS(ON) (mΩ
Ω)
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=-4.5V
9
6
VGS=-10V
3
VGS=-10V
ID=-16A
1.4
1.2
1
VGS=-4.5V
ID=-10A
0.8
0
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
1.0E+01
ID=-16A
1.0E+00
20
125°C
1.0E-01
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
25
15
1.0E-02
25°C
10
1.0E-03
25°C
5
1.0E-04
0
1.0E-05
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: January 2014
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=-15V
ID=-16A
2500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
2000
1500
1000
Coss
500
Crss
0
0
0
10
20
30
40
50
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
10µs 10µs
100.0
RDS(ON)
limited
400
10.0
DC
1.0
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
100µs
Power (W)
-ID (Amps)
10
300
200
100
0
0.0
0.01
0.1
1
10
-VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
50
Power Dissipation (W)
30
-Current rating ID(A)
40
30
20
10
0
20
10
0
0
25
50
75
100
125
150
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: January 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVD SS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: January 2014
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6