Data Sheet

PMEG6010ER
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 9 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„
„
„
„
„
„
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
„
„
„
„
„
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 110 °C
Tsp ≤ 140 °C
[1]
Min
Typ
Max
Unit
-
-
1
A
-
-
1
A
VR
reverse voltage
-
-
60
V
VF
forward voltage
IF = 1 A
-
460
530
mV
IR
reverse current
VR = 60 V
-
30
60
μA
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Graphic symbol
[1]
1
1
2
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
PMEG6010ER
Package
Name
Description
Version
-
plastic surface-mounted package; 2 leads
SOD123W
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG6010ER
BB
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
60
V
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
-
1
A
Tamb ≤ 110 °C
[1]
Tsp ≤ 140 °C
PMEG6010ER_1
Product data sheet
IFSM
non-repetitive peak
forward current
square wave;
tp = 8 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
-
1
A
[2]
-
50
A
[3][4]
-
0.57
W
[3][5]
-
0.95
W
[1][3]
-
1.8
W
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PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2]
Tj = 25 °C prior to surge.
[3]
Reflow soldering is the only recommended soldering method.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Rth(j-sp)
PMEG6010ER_1
Product data sheet
Thermal characteristics
thermal resistance from
junction to solder point
Min
Typ
Max
Unit
[3]
-
-
220
K/W
[4]
-
-
130
K/W
[5]
-
-
70
K/W
[6]
-
-
18
K/W
[1][2]
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6]
Soldering point of cathode tab.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab362
103
duty cycle =
Zth(j-a)
(K/W)
1
102
0.5
0.25
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab363
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
0.75
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010ER_1
Product data sheet
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Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab364
103
Zth(j-a)
(K/W)
duty cycle =
102
1
0.75
0.5
0.25
10
0.1
0.02
0.33
0.2
0.05
0.01
0
1
10−1
10−3
10−2
10−1
1
102
10
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 0.1 A
-
320
370
mV
IF = 0.7 A
-
430
490
mV
IF = 1 A
-
460
530
mV
IR
Cd
PMEG6010ER_1
Product data sheet
reverse current
diode capacitance
VR = 5 V
-
1.2
-
μA
VR = 10 V
-
1.7
-
μA
VR = 60 V
-
30
60
μA
f = 1 MHz
VR = 1 V
-
120
-
pF
VR = 10 V
-
40
-
pF
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab890
10
006aab891
10−2
IR
(A)
10−3
IF
(A)
(1)
1
(2)
10−4
(1)
(2)
10−1
10−5
(3)
(4)
(5)
(3)
10−6
10−2
10−7
10−3
10−8
10−4
0.0
(4)
10−9
0.2
0.4
0.6
0.8
0
20
VF (V)
40
60
VR (V)
(1) Tj = 150 °C
(1) Tj = 125 °C
(2) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = 25 °C
(4) Tj = −40 °C
(5) Tj = −40 °C
Fig 4.
Forward current as a function of forward
voltage; typical values
Fig 5.
Reverse current as a function of reverse
voltage; typical values
006aab892
250
Cd
(pF)
200
150
100
50
0
0
20
40
60
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
PMEG6010ER_1
Product data sheet
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Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab893
0.7
PF(AV)
(W)
0.6
006aab894
0.8
(4)
PR(AV)
(W)
(3)
0.6
0.5
0.4
(2)
0.4
(1)
(1)
0.3
(2)
(3)
0.2
0.2
(4)
0.1
0.0
0.0
0.0
0.5
1.0
1.5
0
20
40
IF(AV) (A)
Tj = 150 °C
Tj = 125 °C
(1) δ = 0.1
(1) δ = 1
(2) δ = 0.2
(2) δ = 0.9
(3) δ = 0.5
(3) δ = 0.8
(4) δ = 1
(4) δ = 0.5
Fig 7.
Average forward power dissipation as a
function of average forward current; typical
values
006aab895
1.6
(1)
IF(AV)
(A)
Fig 8.
Average reverse power dissipation as a
function of reverse voltage; typical values
006aab896
1.6
(1)
IF(AV)
(A)
1.2
1.2
(2)
(2)
0.8
0.8
(3)
(3)
(4)
(4)
0.4
0.4
0.0
0.0
0
25
50
75
100
125
150
175
Tamb (°C)
0
25
50
75
100
125
150
175
Tamb (°C)
FR4 PCB, standard footprint
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
Tj = 150 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9.
60
VR (V)
Average forward current as a function of
ambient temperature; typical values
PMEG6010ER_1
Product data sheet
Fig 10. Average forward current as a function of
ambient temperature; typical values
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Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab897
1.6
(1)
IF(AV)
(A)
006aab898
1.6
(1)
IF(AV)
(A)
1.2
1.2
(2)
(2)
0.8
0.8
(3)
(3)
(4)
(4)
0.4
0.4
0.0
0.0
0
25
50
75
100
125
150
175
Tamb (°C)
0
25
50
75
100
125
150
175
Tsp (°C)
Tj = 150 °C
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values
PMEG6010ER_1
Product data sheet
Fig 12. Average forward current as a function of
solder point temperature; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
8. Test information
P
t2
t1
t2
duty cycle δ =
t1
t
006aaa812
Fig 13. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current,
I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.9
1.5
1.1
0.9
1
0.6
0.3
3.7
3.3
2.8
2.4
2
1.05
0.75
Dimensions in mm
0.22
0.10
08-11-06
Fig 14. Package outline SOD123W
PMEG6010ER_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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PMEG6010ER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
PMEG6010ER
[1]
SOD123W
4 mm pitch, 12 mm tape and reel
-115
For further information and the availability of packing methods, see Section 14.
11. Soldering
4.4
2.9
2.8
solder lands
solder resist
1.1 1.2
(2×) (2×)
2.1 1.6
solder paste
occupied area
1.1
(2×)
1.2
(2×)
Dimensions in mm
sod123w_fr
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint SOD123W
PMEG6010ER_1
Product data sheet
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Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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PMEG6010ER
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1 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEG6010ER_1
20100309
Product data sheet
-
-
PMEG6010ER_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
PMEG6010ER
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1 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PMEG6010ER_1
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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PMEG6010ER
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13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMEG6010ER_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 March 2010
Document identifier: PMEG6010ER_1
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