English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
62mmC-SerienModulmitTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode
62mmC-seriesmodulewithtrench/fieldstopIGBT4andoptimizedEmitterControlledDiode
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
300
460
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
1600
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 11,5 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,75
2,00
2,05
2,15
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
2,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,5
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
19,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,70
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,20
0,25
0,27
µs
µs
µs
tr
0,045
0,05
0,055
µs
µs
µs
td off
0,50
0,60
0,62
µs
µs
µs
tf
0,10
0,16
0,18
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8 Ω
Tvj = 150°C
Eon
16,5
25,0
30,0
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1,8 Ω
Tvj = 150°C
Eoff
23,5
35,0
39,0
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,032
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
1
tP ≤ 10 µs, Tvj = 150°C
1200
A
0,093 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
300
A
IFRM
600
A
I²t
19000
18000
特征值/CharacteristicValues
min.
typ.
max.
1,65
1,65
1,65
2,15
A²s
A²s
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
360
400
410
A
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
30,0
56,0
66,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
14,0
26,0
28,0
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,052
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
2
V
V
V
0,15 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
29,0
23,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
23,0
11,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,01
LsCE
20
nH
RCC'+EE'
0,70
mΩ
Tstg
-40
125
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
-
5,0
Nm
重量
Weight
G
340
g
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
3
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
600
600
500
500
400
400
IC [A]
IC [A]
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
300
300
200
200
100
100
0
0,0
0,4
0,8
1,2
1,6
VCE [V]
2,0
2,4
2,8
0
3,2
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.8Ω,RGoff=1.8Ω,VCE=600V
600
80
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
70
500
60
400
E [mJ]
IC [A]
50
300
40
30
200
20
100
10
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
4
0
100
200
300
IC [A]
400
500
600
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=300A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
150
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
135
120
ZthJC : IGBT
105
0,1
ZthJC [K/W]
E [mJ]
90
75
60
0,01
45
30
i:
1
2
3
4
ri[K/W]: 0,00558 0,03069 0,02976 0,02697
τi[s]:
0,01
0,02
0,05
0,1
15
0
0
2
4
6
8
10
RG [Ω]
12
14
16
0,001
0,001
18
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.8Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
700
600
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
600
500
500
400
IF [A]
IC [A]
400
300
300
200
200
100
100
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
5
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.8Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=600V
40
35
Erec, Tvj = 125°C
Erec, Tvj = 150°C
35
Erec, Tvj = 125°C
Erec, Tvj = 150°C
30
30
25
25
E [mJ]
E [mJ]
20
20
15
15
10
10
5
5
0
0
100
200
300
IF [A]
400
500
0
600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
ZthJC : Diode
ZthJC [K/W]
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,009 0,0495 0,048 0,0435
τi[s]:
0,01 0,02
0,05 0,1
0,001
0,001
0,01
0,1
t [s]
1
10
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
6
0
2
4
6
8
10
RG [Ω]
12
14
16
18
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
j
j
n
n
i
i
preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R12KE4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
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havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
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exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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preparedby:MK
dateofpublication:2013-11-04
approvedby:WR
revision:2.1
8