Data Sheet

BAS21J
Single high-speed switching diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
n High switching speed: trr ≤ 50 ns
n Low leakage current
n Repetitive peak reverse voltage:
VRRM ≤ 300 V
n Excellent coplanarity and improved
thermal behavior
n Low capacitance: Cd ≤ 2 pF
n Reverse voltage: VR ≤ 300 V
n Very small and flat lead SMD plastic
package
1.3 Applications
n High-speed switching
n General-purpose switching
n Voltage clamping
n Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
IF
forward current
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
Conditions
[1]
VR = 250 V
[2]
Min
Typ
Max
Unit
-
-
250
mA
-
-
150
nA
-
-
300
V
-
-
50
ns
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
BAS21J
NXP Semiconductors
Single high-speed switching diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
1
2
sym006
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
BAS21J
Package
Name
Description
Version
SC-90
plastic surface-mounted package; 2 leads
SOD323F
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAS21J
AN
BAS21J_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
2 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
VR
reverse voltage
Min
Max
Unit
-
300
V
-
300
V
-
250
mA
-
1
A
tp = 100 µs
-
3
A
tp = 1 ms
-
2.3
A
[1]
IF
forward current
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms;
δ ≤ 0.25
IFSM
non-repetitive peak forward
current
square wave
[2]
tp = 10 ms
-
1.7
A
-
550
mW
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Ptot
total power dissipation
Tj
Tamb ≤ 25 °C
[3][4]
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
Tj = 25 °C prior to surge.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[4]
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
in free air
Typ
Max
Unit
-
-
230
K/W
[3]
-
-
55
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Soldering point of cathode tab.
BAS21J_1
Product data sheet
Min
[1][2]
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
3 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
1.1
V
VF
forward voltage
IF = 100 mA
IR
reverse current
VR = 250 V
-
-
150
nA
VR = 250 V; Tj = 150 °C
-
-
50
µA
-
-
2
pF
-
-
50
ns
Cd
trr
diode capacitance
VR = 0 V; f = 1 MHz
reverse recovery time
[2]
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
BAS21J_1
Product data sheet
[1]
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
4 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
mhc618
500
IF
(mA)
mbg703
102
IFSM
(A)
400
10
300
200
1
(1) (2)
100
(3)
10−1
0
0
0.5
1
VF (V)
1
1.5
10
102
103
104
tp (µs)
(1) Tamb = 150 °C
Based on square wave currents.
(2) Tamb = 75 °C
Tj = 25 °C; prior to surge
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
mhc619
102
IR
(µA)
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mhc621
0.42
Cd
(pF)
10
0.38
1
0.34
10−1
10−2
0
40
80
120
160
200
Tj (°C)
0.3
0
20
30
40
VR (V)
f = 1 MHz; Tamb = 25 °C
VR = 250 V
Fig 3. Reverse current as a function of junction
temperature; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS21J_1
Product data sheet
10
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
5 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
8. Test information
tr
RS = 50 Ω
tp
t
D.U.T.
10 %
+ IF
IF
V = VR + IF × RS
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
VR
(1)
90 %
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
BAS21J_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
6 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
9. Package outline
1.35
1.15
0.80
0.65
0.5
0.3
1
2.7
2.3
1.8
1.6
2
0.25
0.10
0.40
0.25
Dimensions in mm
04-09-13
Fig 6. Package outline SOD323F (SC-90)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BAS21J
[1]
Package
SOD323F
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
3000
10000
-115
-135
For further information and the availability of packing methods, see Section 14.
11. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
1.65
0.95
0.50
0.60
occupied area
solder paste
0.50
(2×)
001aab169
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 7. Reflow soldering footprint SOD323F (SC-90)
BAS21J_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
7 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS21J_1
20070308
Product data sheet
-
-
BAS21J_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
8 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BAS21J_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 8 March 2007
9 of 10
BAS21J
NXP Semiconductors
Single high-speed switching diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 March 2007
Document identifier: BAS21J_1
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