Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG2015EV
Low VF MEGA Schottky barrier
diode
Product data sheet
Supersedes data of 2003 May 21
2003 Jun 03
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
FEATURES
PMEG2015EV
PINNING
• Forward current: 1.5 A
PIN
• Reverse voltage: 20 V
1
cathode
• Very low forward voltage
2
cathode
• Ultra small plastic SMD package
3
anode
• Flat leads: excellent coplanarity and improved thermal
behaviour.
4
anode
5
cathode
6
cathode
DESCRIPTION
APPLICATIONS
• Low voltage rectification
• High efficiency DC-DC conversion
• Switch mode power supply
handbook, halfpage
6
• Inverse polarity protection
5
4
• Low power consumption applications.
1, 2
5, 6
3, 4
DESCRIPTION
MHC310
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
1
2
3
Marking code: F5.
Fig.1
Simplified outline (SOT666 and symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
20
V
IF
continuous forward current
Ts < 55 °C
−
1.5
A
IFSM
non-repetitive peak forward current
tp = 8 ms square wave; note 1
−
10
A
IFRM
repetitive peak forward current
tp = 1 ms; δ = ≤ 0.25
−
4.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+125
°C
Note
1. Only valid if pins 3 and 4 are connected in parallel.
2003 Jun 03
2
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
IR
Cd
PARAMETER
continuous forward voltage
continuous reverse current
diode capacitance
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2; note 1
IF = 10 mA
240
270
mV
IF = 100 mA
300
350
mV
IF = 1 000 mA
480
550
mV
IF = 1 500 mA
530
660
mV
VR = 5 V
5
10
μA
VR = 8 V
7
20
μA
VR = 15 V
10
50
μA
VR = 5 V; f = 1 MHz; see Fig.4 19
25
pF
see Fig.3; note 2
Notes
1. Only valid if pins 1, 2 and 5, 6 are soldered on 1 cm2 copper solder land.
2. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to solder point
VALUE
UNIT
note 1
405
K/W
note 2
215
K/W
note 3
80
K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
3. Soldering point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jun 03
3
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
GRAPHICAL DATA
MLE111
104
handbook, halfpage
MHC312
105
handbook, halfpage
IF
(mA)
IR
(μA)
(1)
104
103
(1)
102
(2)
(3)
(2)
103
10
102
1
10
(3)
10−1
0
0.2
0.4
VF (V)
1
0.6
0
5
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MHC313
handbook, halfpage
Cd
(pF)
60
40
20
0
0
5
10
15
VR (V)
20
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 03
15
20
25
VR (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
80
10
4
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2003 Jun 03
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Jun 03
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp7
Date of release: 2003 Jun 03
Document order number: 9397 750 11556
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