NB3N51044 D

NB3N51044
3.3 V, Crystal to 100 MHz /
125 MHz Quad HCSL / LVDS
Clock Generator
The NB3N51044 is a precision, low phase noise clock generator that
supports PCI Express and sRIO clock requirements. The device
accepts a 25 MHz fundamental mode parallel resonant crystal or a
25 MHz single ended reference clock signal and generates four
differential HCSL/LVDS outputs (See Figure 10 for LVDS interface)
of 100 MHz or 125 MHz clock frequency based on frequency select
input F_SEL. NB3N51044 is configurable to bypass the PLL from
signal path using BYPASS, and provides the output frequency through
the divider network. All clock outputs can be individually enabled /
disabled through hardware input pins OE[3:0]. In addition, device can
be reset using Master Reset input pin MR_OE#.
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MARKING DIAGRAM
NB3N5
1044G
ALYW
TSSOP−28
DT SUFFIX
CASE 948AA
Features
•
•
•
•
•
•
•
•
•
•
•
•
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Uses 25 MHz Fundamental Crystal or Reference Clock Input
Four Low Skew HCSL or LVDS Outputs
Output Frequency Selection of 100 MHz or 125 MHz
Individual OE Tri−States Outputs
Master Reset and BYPASS Modes
PCIe Gen 1, Gen 2, Gen 3 Compliant
Typical Phase Jitter @ 125 MHz (Integrated 1.875 MHz to 20 MHz):
0.2 ps
Typical Cycle−Cycle Jitter @ 100 MHz (10k cycles): 20 ps
Phase Noise @ 100 MHz:
Offset
Noise Power
100 Hz
−101 dBc/Hz
1 kHz
−123 dBc/Hz
10 kHz
−133 dBc/Hz
100 kHz −136 dBc/Hz
1 MHz
−141 dBc/Hz
10 MHz −155 dBc/Hz
Operating Supply Voltage Range 3.3 V ±5%
Industrial Temperature Range −40°C to +85°C
Functionally Compatible with ICS841604I with enhanced performance
These are Pb−Free Devices
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Applications
•
•
•
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End Products
Networking
Consumer
Computing and Peripherals
Industrial Equipment
PCIe Clock Generation Gen 1, Gen 2 and Gen 3
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
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1
Switch and Router
Set Top Box, LCD TV
Servers, Desktop Computers
Automated Test Equipment
Publication Order Number:
NB3N51044/D
NB3N51044
BLOCK DIAGRAM
VDD
BYPASS
MR_OE#
HCSL
buffer
CLK3
CLK3
OE3
HCSL
buffer
XIN
0
25 MHz
Crystal
XOUT
Clock Buffer/
Cystal Oscillator
Charge
Pump
Phase
Detector
1
VCO
Output
Divider
($N)
CLK2
OE2
HCSL
buffer
REF_IN
CLK2
Feedback
Divider
CLK1
CLK1
OE1
CLK0
HCSL
buffer
CLK0
OE0
GND
REF_SEL
F_SEL
Figure 1. Block Diagram
PIN CONFIGURATION
REF_SEL
1
28
VDD
REF_IN
2
27
BYPASS
VDD
3
26
IREF
GND
4
25
F_SEL
XIN
5
24
VDD
XOUT
6
23
CLK3
MR_OE#
7
22
CLK3
VDD
8
21
CLK2
OE3
9
20
CLK2
OE2
10
19
GND
OE1
11
18
CLK1
OE0
12
17
CLK1
GND
13
16
CLK0
VDD
14
15
CLK0
NB3N51044
Figure 2. Pin Configuration (Top View)
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IREF
NB3N51044
PIN DESCRIPTION
Table 1. PIN DESCRIPTION
Pin #
Pin Name
Type
Description
1
REF_SEL
Input
LVCMOS/ LVTTL level input to select input reference source. Pulldown with crystal as default reference input source.
2
REF_IN
Input
25 MHz single−ended reference input clock.
3
VDD
Power
Positive supply voltage pin connected to +3.3 V typical supply voltage.
4
GND
Ground
Power supply ground 0 V. This pin provides GND return path for the device.
5
XIN
Input
6
XOUT
Output
7
MR_OE#
Input
8
VDD
Power
9
OE3
Input
LVCMOS/ LVTTL level interface active High output enable pin for CLK3. Pulldown with default Low
and output disabled.
10
OE2
Input
LVCMOS/ LVTTL level interface active High output enable pin for CLK2. Pulldown with default Low
and output disabled.
11
OE1
Input
LVCMOS/ LVTTL level interface active High output enable pin for CLK1. Pulldown with default Low
and output disabled.
12
OE0
Input
LVCMOS/ LVTTL level interface active High output enable pin for CLK0. Pulldown with default Low
and output disabled.
13
GND
Ground
Power supply ground 0 V. This pin provides GND return path for the device.
14
VDD
Power
Positive supply voltage pin connected to +3.3 V typical supply voltage.
15
CLK0
HCSL or LVDS
Noninverted clock output. (For LVDS levels see Figure 10)
output
16
CLK0
HCSL or LVDS
Inverted clock output. (For LVDS levels see Figure 10)
output
17
CLK1
HCSL or LVDS
Noninverted clock output. (For LVDS levels see Figure 10)
output
18
CLK1
HCSL or LVDS
Inverted clock output. (For LVDS levels see Figure 10)
output
19
GND
20
CLK2
HCSL or LVDS
Noninverted clock output. (For LVDS levels see Figure 10)
output
21
CLK2
HCSL or LVDS
Inverted clock output. (For LVDS levels see Figure 10)
output
22
CLK3
HCSL or LVDS
Noninverted clock output. (For LVDS levels see Figure 10)
output
23
CLK3
HCSL or LVDS
Inverted clock output. (For LVDS levels see Figure 10)
output
24
VDD
Power
25
F_SEL
Input
LVCMOS/ LVTTL level Frequency Selects PCIe (100 MHz) when Low or sRIO (125 MHz) output
frequency when High. Pulldown with default of 100 MHz at outputs.
26
IREF
Output
Output current reference pin. Connect to precision resistor (typical 475 W) to set internal current
reference
27
BYPASS
Input
LVCMOS/ LVTTL level input. Selects PLL operation mode when Low or PLL bypass mode when
High. Pulldown with default of PLL mode.
28
VDD
Power
Ground
25 MHz fundamental mode crystal input connection. Ground this pin when crystal not connected.
25 MHz crystal output. Float this pin when crystal not connected.
Asynchronous LVCMOS/ LVTTL level input. When High, this pin acts as Master Reset to disable
the output dividers and set outputs to high impedance (Hi−Z) mode. When Low, this pin acts as
Output Enable for enabling the output buffers. Pulldown with default Low.
Positive supply voltage pin connected to +3.3 V typical supply voltage.
Power supply ground 0 V. This pin provides GND return path for the device.
Positive supply voltage pin connected to +3.3 V typical supply voltage.
Positive supply voltage pin connected to +3.3 V typical supply voltage.
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NB3N51044
Table 2. OUTPUT FREQUENCY SELECT FUNCTION
TABLE
Input
Table 5. INPUT REFERENCE SELECT FUNCTION
TABLE
Output
REF_SEL
0
Crystal, at XIN and XOUT (default)
1
Single−ended reference clock at REF_IN
F_SEL
N (Output
divider)
CLK[3:0]/CLK[3:0]#
0
5
100MHz (PCIe, default)
1
4
125MHz (sRIO)
Recommended Crystal Parameters
Crystal
Frequency
Load Capacitance
Shunt Capacitance, C0
Equivalent Series Resistance
Initial Accuracy at 25°C
Temperature Stability
Aging
Table 3. PLL BYPASS FUNCTION TABLE
BYPASS
PLL Configuration
0
PLL Enabled (default)
1
PLL bypassed, fout = fIN/N
Input Reference
Fundamental AT−Cut
25 MHz
16−20 pF
7 pF Max
50 W Max
±20 ppm
±30 ppm
±20 ppm
Table 4. MASTER RESET AND OE FUNCTION
TABLE
MR_OE#
OEx [x=3:0]
0 (default)
0 (default)
CLKx, CLKx# are High
impedance
1
CLKx Output Enabled
x
Device reset, outputs
disabled (Hi−Z)
1
Function
Table 6. ATTRIBUTES
Characteristic
Value
ESD Protection
Human Body Model
2 kV
Internal Input Default State Resistor
51 kW
Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
UL 94 V−0 @ 0.125 in
132,000
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 7. ABSOLUTE MAXIMUM RATING (Note 2)
Symbol
VDD
Parameter
Positive power supply with respect to GND
Rating
Unit
+4.6
V
VI
Input Voltage with respect to device GND
−0.5 V to VDD + 0.5 V
V
TA
Operating Temperature Range
−40 to +85
°C
TSTG
Storage temperature
−65 to +150
°C
TSOL
Max. Soldering Temperature (10 sec)
265
°C
qJA
Thermal Resistance (Junction−to−ambient) 0 lfpm
(Note 3) 500 lfpm
63
55
°C/W
qJC
Thermal Resistance (Junction−to−case)
50
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
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NB3N51044
Table 8. DC ELECTRICAL CHARACTERISTICS (VDD = 3.3 V ± 5%, GND = 0 V, TA = −40°C to 85°C, Note 4)
Symbol
Parameter
Min
Typ
Max
Unit
3.135
3.3
3.465
V
126
mA
50
mA
2.0
VDD+0.3
V
GND−0.3
0.8
V
150
mA
VDD
Power Supply Voltage
IDD
Power Supply Current when all outputs are ON, OE[3:0] = 1, FCLKOUT = 125 MHz
IOFF
Power Supply Current when all outputs are set OFF, OE[3:0] = 0
VIH
Input HIGH Voltage (XIN, REF_IN, REF_SEL, BYPASS, F_SEL, MR_OE#)
VIL
Input LOW Voltage (XIN, REF_IN, REF_SEL, BYPASS, F_SEL, MR_OE#)
IIH
Input Leackage on logic High current at all input pins
IIL
Input Leackage on logic Low current at all input pins
−5
VOH
Output HIGH Voltage for HCSL output (Note 5)
660
VOL
Output LOW Voltage for HCSL output (Note 5)
−150
45
VMAX
Absolute Maximum Voltage, Measured Single ended including overshoot (Notes 5, 6)
VMIN
Absolute Minimum Voltage, Measured Single ended including undershoot (Notes 5, 7)
−300
Crossing Voltage Magnitude (Absolute) for HCSL output (Notes 5, 8, 9)
250
VCROSS
Ring Back Voltage measured differentially (Note 11)
850
−100
mV
mV
1150
DVCROSS Change in Magnitude of Vcross for HCSL Output (Notes 5, 8, 10)
VRB
mA
mV
mV
550
mV
150
mV
100
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measurement taken with outputs terminated with RS = 33.2 W, RL = 49.9 W, with test load capacitance of 2 pF and current biasing resistor
set at RREF = 475 W. See Figure 9. Guaranteed by characterization.
5. Measurement taken from single-ended waveform
6. Defined as the maximum instantaneous voltage value including positive overshoot
7. Defined as the maximum instantaneous voltage value including negative overshoot
8. Measured at crossing point where the instantaneous voltage value of the rising edge of CLKx+ equals the falling edge of CLKx-.
9. Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points
for this measurement.
10. Defined as the total variation of all crossing voltage of rising CLKx+ and falling CLKx-. This is maximum allowed variance in the VCROSS for
any particular system.
11. Differential clock must maintain a minimum ±150 mV differential voltage after rising/falling edges before it is allowed to drop back into the
VRB ±100 differential range.
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NB3N51044
Table 9. AC ELECTRICAL CHARACTERISTICS (VDD = 3.3 V ± 5%, GND = 0 V, TA = −40°C to 85°C, Note 12)
Symbol
fCLKIN
fCLKOUT
FNOISE−100M
FNOISE−125M
tJIT(F)−100M
tJIT(F)−125M
Parameter
Conditions
Min
Clock/ Crystal input frequency
Phase Noise Performance at 125 MHz
RMS Phase Jitter at 100 MHz Clock
RMS Phase Jitter at 125 MHz Clock
Max
Unit
25
MHz
100 /
125
MHz
@ 100 Hz offset from carrier
−101
dBc/Hz
@ 1 kHz offset from carrier
−123
@ 10 kHz offset from carrier
−133
@ 100 kHz offset from carrier
−136
@ 1 MHz offset from carrier
−141
@ 10 MHz offset from carrier
−155
@ 100 Hz offset from carrier
−98
@ 1 kHz offset from carrier
−117
@ 10 kHz offset from carrier
−130
@ 100 kHz offset from carrier
−133
@ 1 MHz offset from carrier
−141
@ 10 MHz offset from carrier
−154
Output Frequency
Phase Noise Performance at 100 MHz
Typ
Integration Range 1.875 MHz to
20 MHz
0.2
Integration Range 12 kHz to 20
MHz
0.4
Integration Range 1.875 MHz to
20 MHz
0.2
Integration Range 12 kHz to 20
MHz
0.4
dBc/Hz
ps
ps
tJITTER−100M
Peak Cycle−to−Cycle Jitter
Measured at 100 MHz over
10000 cycles
20
ps
tJITTER−125M
Peak Cycle−to−Cycle Jitter
Measured at 100 MHz over
10000 cycles
20
ps
tR / tF
Rise / Fall Time @ 100 MHz and
125 MHz
Measured differentially between
−150 mV to 150 mV with 2 pF
Load, Figure 11
DtR/tF
0.6
4.0
V/ns
Output Rise/ Fall time variation
125
ps
tSKEW
Within device output to output skew
40
ps
tOE
Output enable/disable time (Note 13)
Measured at cross point
tDC
Output Clock Duty Cycle
VDD = 3.3 V
tPU
Stabilization time from Power−up
ms
10
45
50
3.0
55
%
mS
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
12. Measurement taken from differential output on single−ended channel terminated with RS = 33.2 W , RL = 49.9 W , with test load capacitance
of 2 pF and current biasing resistor set at RREF = 475 W . See Figure 9. Guaranteed by characterization.
13. Output pins are tri−stated when OE is asserted LOW. Output pins are driven differentially when OE is HIGH unless device is in power down
mode, PD = Low.
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NB3N51044
Table 10. AC ELECTRICAL CHARACTERISTICS − PCI EXPRESS JITTER SPECIFICATIONS
VDD = 3.3 V ± 5%, TA = −40°C to 85°C, fOUT = 100 MHz, 125 MHz
Typ
Max
PCIe
Industry
Spec
fCLKIN = 25 MHz Crystal,
fCLKOUT = 100 MHz
Input Evaluation Band:
0 Hz − Nyquist (clock
frequency/2) for 106 clock periods
10
20
86
fCLKIN = 25 MHz Crystal,
fCLKOUT = 125 MHz
Input Evaluation Band: 0 Hz −
Nyquist (clock frequency/2) for
106 clock periods
10
20
−
fCLKIN = 25 MHz Crystal,
fCLKOUT = 100 MHz
Input High Band:
1.5 MHz − Nyquist (clock
frequency/2)
1.0
1.8
3.1
fCLKIN = 25 MHz Crystal,
fCLKOUT = 125 MHz
Input High Band: 1.5 MHz −
Nyquist (clock frequency/2)
0.8
1.0
−
fCLKIN = 25 MHz Crystal,
fCLKOUT = 100 MHz
Input Low Band: 10 kHz − 1.5
MHz
0.10
0.15
3.0
fCLKIN = 25 MHz Crystal,
fCLKOUT = 125 MHz
Input Low Band: 10 kHz −
1.5 MHz
0.08
0.15
−
fCLKIN = 25 MHz Crystal,
fCLKOUT = 100 MHz
Input Evaluation Band: 0 Hz −
Nyquist (clock frequency/2)
0.35
0.70
0.8
fCLKIN = 25 MHz Crystal,
fCLKOUT = 125 MHz
Input Evaluation Band: 0 Hz −
Nyquist (clock frequency/2)
0.17
0.22
−
Symbol
Parameter
Test Condition
tJ
(PCIe Gen 1)
Phase Jitter Peak−toPeak
(Notes 15 and 18)
tREFCLK_HF_RMS
(PCIe Gen 2)
tREFCLK_LF_RMS
(PCIe Gen 2)
tREFCLK_RMS
(PCIe Gen 3)
Phase Jitter RMS
(Notes 16 and 18)
Phase Jitter RMS
(Notes 16 and 18)
Phase Jitter RMS
(Notes 17 and 18)
Min
Unit
ps
ps
ps
ps
14. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal
equilibrium has been reached under these conditions.
15. Peak−to−Peak jitter after applying system transfer function for the Common Clock Architecture. Maximum limit for PCI Express Gen 1 is 86 ps
peak−to−peak for a sample size of 106 clock periods.
16. RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and reporting the
worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1 ps RMS for tREFCLK_HF_RMS (High Band)
and 3.0ps RMS for tREFCLK_LF_RMS (Low Band).
17. RMS jitter after applying system transfer function for the common clock architecture.
18. Measurement taken from differential output on single−ended channel terminated with RS = 33.2 W , RL = 49.9 W , with test load capacitance
of 2 pF and current biasing resistor set at RREF = 475 W . See Figure 9. This parameter is guaranteed by characterization. Not tested in
production.
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NB3N51044
NOISE POWEER (dBc/Hz)
PHASE NOISE
OFFSET FREQUENCY (Hz)
NOISE POWEER (dBc/Hz)
Figure 3. Typical Phase Noise Plot at 100 MHz (fCLKIN = 25 MHz Crystal , fCLKOUT = 100 MHz,
RMS Phase Jitter = 172 fs for Integration Range of 1.875 MHz to 20 MHz, Output Termination = HCSL type)
OFFSET FREQUENCY (Hz)
Figure 4. Typical Phase Noise Plot at 125 MHz (fCLKIN = 25 MHz Crystal , fCLKOUT = 125 MHz,
RMS Phase Jitter = 155 fs for Integration Range of 1.875 MHz to 20 MHz, Output Termination = HCSL type)
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NB3N51044
NOISE POWEER (dBc/Hz)
PHASE NOISE
OFFSET FREQUENCY (Hz)
NOISE POWEER (dBc/Hz)
Figure 5. Typical Phase Noise Plot at 100 MHz (fCLKIN = 25 MHz Crystal , fCLKOUT = 100 MHz,
RMS Phase Jitter = 389 fs for Integration Range of 12 kHz to 20 MHz, Output Termination = HCSL type)
OFFSET FREQUENCY (Hz)
Figure 6. Typical Phase Noise Plot at 125 MHz (fCLKIN = 25 MHz Crystal , fCLKOUT = 125 MHz,
RMS Phase Jitter = 383 fs for Integration Range of 12 kHz to 20 MHz, Output Termination = HCSL type)
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NB3N51044
APPLICATION INFORMATION
Crystal Input Interface
as nominal values, assuming approximately 2 pF of stray
capacitance per trace and approximately 8 pF of internal
capacitance.
CL = (C1 + Cstray + Cin) / 2; C1 = C2
The frequency accuracy and duty cycle skew can be
fine-tuned by adjusting the C1 and C2 values. For example,
increasing the C1 and C2 values will reduce the operational
frequency.
Figure 7 shows the NB3N51044 device crystal oscillator
interface using a typical parallel resonant crystal. The device
crystal connections should include pads for small capacitors
from X1 to ground and from X2 to ground. These capacitors,
C1 and C2, need to consider the stray capacitances of the
board and are used to match the nominally required crystal
load capacitance CL. A parallel crystal with loading
capacitance CL = 18 pF would use C1 = 26 pF and C2 = 26 pF
C1 = 26 pF
X1
Fundamental Mode
Parallel Resonant Crystal
18 pF Load
X2
C2 = 26 pF
Figure 7. Crystal Interface Loading
Power Supply Filter
capacitors as close as possible to the device to minimize lead
inductance.
In order to isolate the NB3N51044 from system power
supply, noise decoupling is required. The 10 mF and a 0.1 mF
cap from supply pins to GND decoupling capacitor has to be
connected between VDD (pins 3, 8, 14, 24 and 28) and GND
(pins 4, 13 and 19). It is recommended to place decoupling
Termination
The output buffer structure is shown in the Figure 8.
2.6 mA
14 mA
IREF
RREF
CLKx
CLKx
HCSL / LVDS
termination
475 W
Figure 8. Simplified Output Structure
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NB3N51044
interface may not require the 100 W near the LVDS receiver
if the receiver has internal 100 W termination. An optional
series resistor RL may be connected to reduce the overshoots
in case of impedance mismatch.
The outputs can be terminated to drive HCSL receiver
(see Figure 9) or LVDS receiver (see Figure 10). HCSL
output interface requires 49.9 W termination resistors to
GND for generating the output levels. LVDS output
HCSL INTERFACE
RL* = 33.2 W
CLK0
Zo = 50 W
RL* = 33.2 W
Zo = 50 W
CLK0
RL = 49.9 W
RL = 49.9 W
HCSL
Receiver
NB3N51044
RL* = 33.2 W
CLK1
Zo = 50 W
RL* = 33.2 W
Zo = 50 W
CLK1
IREF
RL = 49.9 W
*Optional
RL = 49.9 W
RREF = 475 W
Figure 9. Typical Termination for HCSL Output Driver and Device Evaluation
LVDS COMPATIBLE INTERFACE
CLK0
RL* = 33.2 W
Zo = 50 W
100 W
RL* = 33.2 W
100 W**
Zo = 50 W
CLK0
RL = 150 W
RL = 150 W
NB3N51044
CLK1
RL* = 33.2 W
Zo = 50 W
100 W
RL* = 33.2 W
CLK1
IREF
RREF = 475 W
LVDS
Receiver
100 W**
Zo = 50 W
*Optional
**Not required if LVDS receiver
has 100 W internal termination
RL = 150 W
RL = 150 W
LVDS Device Load
Figure 10. Typical Termination for LVDS Device Load
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NB3N51044
150 mV
0 mV
150 mV
tR
tF
Figure 11. HCSL Differential Measurement of tR/tF
ORDERING INFORMATION
Temperature
Package
Shipping†
NB3N51044DTG
−40°C to 85°C
TSSOP−28
(Pb−Free)
96 Units / Rail
NB3N51044DTR2G
−40°C to 85°C
TSSOP−28
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NB3N51044
PACKAGE DIMENSIONS
TSSOP28
CASE 948AA
ISSUE A
e
28
PIN ONE
LOCATION
2X
0.20 C B A
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
1
15
B
DETAIL A
E1 E
14
A
0.05
A
D
0.10 C
A
A2
A
SEATING
PLANE
C
28X
A1
b
02
0.10 C B A
S
H
R1
(b)
c
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
R
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE
0.08 MM TOTAL IN EXCESS OF THE “b”
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
4. DATUMS A AND B TO BE DETERMINED
AT DATUM PLANE H.
DIM
A
A1
A2
b
b1
c
c1
D
E
E1
e
L
L1
R
R1
S
01
02
03
MILLIMETERS
MIN
MAX
−−−
1.20
0.05
0.15
0.80
1.05
0.19
0.30
0.19
0.25
0.09
0.20
0.09
0.16
9.60
9.80
6.40 BSC
4.30
4.50
0.65 BSC
0.45
0.75
1.00 REF
0.09
−−−
0.09
−−−
0.20
−−−
0_
8_
12 _REF
12 _REF
GAUGE PLANE
c1
b1
SECTION A−A
L
(L1)
0.25
03
01
DETAIL A
RECOMMENDED
SOLDERING FOOTPRINT
28X
0.42
28X
1.15
6.70
0.65
PITCH
DIMENSIONS: MILLIMETERS
ON Semiconductor and
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