DF3A6.8FUT1 D

DF3A6.8FUT1
Preferred Device
Zener Transient Voltage
Suppressor
Dual Common Anode Zeners for ESD
Protection
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These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
1
3
2
MARKING
DIAGRAM
Features
•
•
Pb−Free Package is Available
SC−70 Package Allows Two Separate Unidirectional Configurations
Low Leakage < 1.0 A @ 5.0 V
Breakdown Voltage: 6.4−7.2 V @ 5.0 mA
ESD Protection Meeting:16 kV Human Body Model
30 kV Contact = IEC61000−4−2
Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1
Peak Power: 150 W @ 20 s (Unidirectional), per Figure 2
Void Free, Transfer−Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Symbol
Value
Unit
PD
200
1.6
°mW°
mW/°C
RJA
618
°C/W
TJ, Tstg
− 55 to
+150
°C
Peak Power Dissipation @ 1.0 ms
(Note 2) @ TA = 25°C
PPK
20
W
Peak Power Dissipation @ 20 s (Note 3)
@ TA = 25°C
PPK
150
W
ESD Discharge
MIL STD 883C − Method 3015−6
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
VPP
Steady State Power Dissipation
Derate above 25°C (Note 1)
Thermal Resistance Junction−to−Ambient
Operating Junction and Storage
Temperature Range
68
68
M
= Specific Device Code
= Date Code
Device
Package
Shipping†
DF3A6.8FUT1
SC−70
3000/Tape & Reel
SC−70
(Pb−Free)
3000/Tape & Reel
DF3A6.8FUT1G
MAXIMUM RATINGS
Rating
2
SC−70/SOT−323
CASE 419
STYLE 4
ORDERING INFORMATION
Mechanical Characteristics
•
•
•
•
1
M
•
•
•
•
•
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
kV
16
30
30
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.
2. Non−repetitive pulse per Figure 1.
3. Non−repetitive pulse per Figure 2.
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 1
1
Publication Order Number:
DF3A6.8FUT1/D
DF3A6.8FUT1
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
VRWM
IR
VBR
IF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VC VBR VRWM
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
ZZK
Maximum Zener Impedance @ IZK
V
IR VF
IT
Breakdown Voltage @ IT
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.8
0.9
V
6.8
7.2
V
Forward Voltage
VF
IF = 10 mA
Zener Voltage (Note 4)
VZ
IZT = 5 mA
Operating Resistance (Note 5)
ZZK
IZK = 0.5 mA
200
ZZT
IZT = 5 mA
50
Reverse Current
IR1
VRWM = 5 V
0.5
A
Clamping Voltage
VC
IPP = 2.0 A (Figure 1)
IPP = 9.37 A (Figure 2)
9.6
V
16
V
6.4
ESD Protection
kV
16
30
30
Human Body Model (HBM)
Contact − IEC61000−4−2
Air Discharge
4. VZ measured at pulse test current IZT at an ambient temperature of 25°C.
5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz.
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2
DF3A6.8FUT1
TYPICAL CHARACTERISTICS
tr
PEAK VALUE — IRSM
VALUE (%)
100
50
% OF PEAK PULSE CURRENT
100
PULSE WIDTH (tP) IS
DEFINED AS THAT POINT
WHERE THE PEAK
CURRENT DECAYS TO
50%OF IRSM.
tr ≤ 10 s
IRS
HALF VALUE —
2
M
tP
PEAK VALUE IRSM @ 8 s
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
80
70
60
HALF VALUE IRSM/2 @ 20 s
50
40
30
tP
20
10
0
0
1
2
3
0
4
0
20
40
t, TIME (ms)
Figure 2. 8 × 20 s Pulse Waveform
20.01
200
REVERSE VOLTAGE IS
MEASURED WITH A PULSE
TEST CURRENT IT AT 25°C
16.01
FORWARD VOLTAGE IS
MEASURED WITH A PULSE
TEST CURRENT IF AT 25°C
180
I F , FORWARD CURRENT (mA)
I ZT, ZENER CURRENT (mA)
18.01
14.01
12.01
10.01
8.01
6.01
4.01
2.01
160
140
120
100
80
60
40
20
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
0
0.5
8
7.8
0.6
VZ, ZENER VOLTAGE (V)
0.7
0.8
0.9
1.0
1.1
1.2
VF, FORWARD VOLTAGE (V)
Figure 3. Zener Voltage vs. Zener Current
Figure 4. Forward Voltage vs. Forward
Current
300
100
80
PD , POWER DISSIPATION (mW)
f = 1 MHz
TA = 25°C
90
C, CAPACITANCE (pF)
80
t, TIME (s)
Figure 1. 10 × 1000 s Pulse Waveform
0
60
70
UniDirectional Pin 1/2−3
60
50
40
30
BiDirectional Pin 1−2
20
250
200
150
100
50
10
0
0
1
2
3
4
V, BIAS VOLTAGE (V)
5
0
6
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Capacitance vs. Bias Voltage
Figure 6. Steady State Power Derating Curve
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3
175
DF3A6.8FUT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
B
S
1
2
D
G
0.05 (0.002)
J
N
C
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
K
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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DF3A6.8FUT1/D
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