BC817 40W D

BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
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• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
VCBO
50
V
Emitter − Base Voltage
VEBO
5.0
V
IC
500
mAdc
Symbol
Max
Unit
PD
460
mW
RqJA
272
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction and Storage Temperature
Range
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2
CE MG
G
1
CE
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION†
Device
Package
Shipping
BC817−40WT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
NSVBC817−40WT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 2
1
Publication Order Number:
BC817−40W/D
BC817−40W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(VR)CEO
45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0 V, IC = 10 mA)
V(VR)CES
50
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(VR)EBO
5.0
−
−
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
−
−
−
−
100
5.0
nA
mA
250
40
−
−
600
−
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
hFE
−
Collector −Emitter Saturation Voltage (Note 2)
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
V
Base −Emitter On Voltage (Note 2)
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
BC817−40W
TYPICAL CHARACTERISTICS
1
700
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
VCE = 1 V
500
25°C
400
300
−55°C
200
100
150°C
25°C
0.1
−55°C
0.01
0.001
0
0.001
0.01
0.001
1
0.1
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
0.01
IC, COLLECTOR CURRENT (A)
1.1
−55°C
IC/IB = 10
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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3
1
BC817−40W
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0.1
1
IB, BASE CURRENT (mA)
10
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Saturation Region
Figure 7. Temperature Coefficients
100
C, CAPACITANCE (pF)
0
0.01
+1
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 8. Capacitances
1
1 ms
10 ms
100 ms
1s
Thermal Limit
0.1
IC (A)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
0.01
Single Pulse Test @ TA = 25°C
0.001
0.01
0.1
1
VCE (Vdc)
10
Figure 9. Safe Operating Area
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4
100
1000
BC817−40W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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BC817−40W/D
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