BCX18LT1G, PNP BCX19LT1G, NPN General Purpose Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com PNP Features NPN COLLECTOR 3 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value VCEO Collector − Base Voltage BCX19LT1 BCX18LT1 VCBO Emitter − Base Voltage VEBO 5.0 Vdc IC 500 mAdc 1 50 30 Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 0 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM Characteristic Thermal Resistance, Junction−to−Ambient 2 Vdc Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C 3 Vdc 45 25 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient 2 EMITTER Unit Collector − Emitter Voltage BCX19LT1 BCX18LT1 Collector Current − Continuous 1 BASE 1 xx M G G 1 xx = T2 or U1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BCX18LT1/D BCX18LT1G, PNP BCX19LT1G, NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 25 − − − − 50 30 − − − − − − − − 100 5.0 nAdc mAdc − − 10 mAdc 100 70 40 − − − 600 − − OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO BCX19 BCX18 Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IC = 0) V(BR)CES BCX19 BCX18 Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.62 Vdc Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − − 1.2 Vdc ORDERING INFORMATION Device BCX18LT1G BCX19LT1G Specific Marking Package Shipping† T2 SOT−23 (Pb−Free) 3000 / Tape & Reel U1 SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BCX18LT1G, PNP BCX19LT1G, NPN hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 1.0 1.0 TJ = 25°C TA = 25°C 0.8 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 Figure 2. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. “On” Voltages 100 +1 qVC for VCE(sat) 0 C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/ °C) VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -1 qVB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 4. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 3 100 BCX18LT1G, PNP BCX19LT1G, NPN PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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