2N3055A D

2N3055AG (NPN),
MJ15015G (NPN),
MJ15016G (PNP)
Complementary Silicon
High-Power Transistors
These PowerBase complementary transistors are designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
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15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
• High Current−Gain − Bandwidth
• Safe Operating Area
• These Devices are Pb−Free and are RoHS Compliant*
PNP
Symbol
Collector−Emitter Voltage
2N3055AG
MJ15015G, MJ15016G
VCEO
Collector−Base Voltage
2N3055AG
MJ15015G, MJ15016G
VCBO
Collector−Emitter Voltage Base
Reversed Biased
2N3055AG
MJ15015G, MJ15016G
VCEV
Emitter−Base Voltage
VEBO
Value
Unit
BASE
1
BASE
1
Vdc
60
120
EMITTER 2
EMITTER 2
Vdc
CASE
100
200
Vdc
100
200
2
1
7.0
Vdc
Collector Current − Continuous
IC
15
Adc
Base Current
IB
7.0
Adc
Total Device Dissipation
@ TC = 25_C
2N3055AG
MJ15015G, MJ15016G
Derate above 25_C
2N3055AG
MJ15015G, MJ15016G
PD
Operating and Storage Junction
Temperature Range
CASE 3
CASE 3
MAXIMUM RATINGS (Note 1)
Rating
NPN
TO−204 (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
TJ, Tstg
115
180
W
W
0.65
1.03
W/_C
W/_C
−65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.52
0.98
_C/W
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
2N3055A/D
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
60
120
−
−
Vdc
−
−
0.7
0.1
−
−
5.0
1.0
−
−
30
6.0
−
−
5.0
0.2
1.95
3.0
−
−
10
20
5.0
70
70
−
−
−
−
1.1
3.0
5.0
0.7
1.8
0.8
2.2
6.0
18
60
600
td
−
0.5
ms
tr
−
4.0
ms
ts
−
3.0
ms
tf
−
6.0
ms
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
2N3055AG
MJ15015G, MJ15016G
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
2N3055AG
MJ15015G, MJ15016G
Collector Cutoff Current (Note 3)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
2N3055AG
MJ15015G, MJ15016G
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)
2N3055AG
MJ15015G, MJ15016G
Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
2N3055AG
MJ15015G, MJ15016G
IEBO
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non−repetitive)
2N3055AG
(VCE = 60 Vdc)
MJ15015G, MJ15016G
IS/b
ICEO
ICEV
mAdc
ICEV
mAdc
mAdc
mAdc
SECOND BREAKDOWN (Note 3)
Adc
ON CHARACTERISTICS (Note 2 and 3)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS (Note 3)
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055AG, MJ15015G
MJ15016G
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
Cob
MHz
pF
SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3)
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
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2
PD(AV), AVERAGE POWER DISSIPATION (W)
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
200
150
MJ15015
MJ15016
100
2N3055A
50
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Derating
200
TJ = 150°C
hFE , DC CURRENT GAIN
100
70
50
-55°C
30
20
25°C
VCE = 4.0 V
10
7
5
3
2
0.2
0.3 0.5 0.7 1
2
3
5
IC, COLLECTOR CURRENT (AMP)
7
10
15
2.8
TJ = 25°C
2.4
2
1.6
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
TC = 25°C
V, VOLTAGE (VOLTS)
3
2.5
2
1.5
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 10
0
0.2 0.3
0.5 0.7
1
2
3
5
7
8A
0.8
0.4
0
0.005 0.01 0.02
0.05 0.1
0.2
0.5
IB, BASE CURRENT (AMP)
1
2
5
Figure 3. Collector Saturation Region
3.5
0.5
4A
1.2
Figure 2. DC Current Gain
1
IC = 1 A
10
20
10
MJ15016
5.0
2.0
2N3055A
MJ15015
1.0
0.1
0.2
0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. “On” Voltages
Figure 5. Current−Gain − Bandwidth Product
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3
2.0
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
10
7
5
VCC
+30 V
t, TIME (s)
μ
7.5 W
25 ms
SCOPE
30 W
+13 V
3
0
2
tr
1
0.7
0.5
0.3
1N6073
-11 V
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.2
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
-5 V
0.1
td
0.2
10
7
5
400
3
200
10 15
7
TJ = 25°C
2
ts
tf
0.1
0.7
0.5
0.3
0.2
0.1
5
0.5 0.7 1
2
3
IC, COLLECTOR CURRENT (AMP)
Figure 7. Turn−On Time
C, CAPACITANCE (pF)
t, TIME (s)
μ
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
0.3
VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25°C
0.2
0.3
2
0.5 0.7 1
3
5
IC, COLLECTOR CURRENT (AMPS)
2N3055A
MJ15015
MJ15016
Cib
100
50
Cob
30
7
10
20
1.0
15
Figure 8. Turn−Off Times
2.0
5.0
10
20
50
100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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4
500 1000
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
COLLECTOR CUT−OFF REGION
NPN
PNP
10,000
1000
VCE = 30 V
1000
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
100
TJ = 150°C
10
100°C
1.0
IC = ICES
REVERSE
0.1
FORWARD
100
10
TJ = 150°C
1.0
100°C
IC = ICES
0.1
REVERSE
0.01
FORWARD
25°C
25°C
0.01
+0.2
+0.1
0
-0.1
-0.2
-0.3
-0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.001
-0.2
-0.5
Figure 10. 2N3055A, MJ15015
0
+0.1
+0.2
+0.3
+0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+0.5
Figure 11. MJ15016
20
20
0.1ms
30 ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMPS)
-0.1
10
100 ms
1 ms
5
100 ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2
1
dc
10
20
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
1.0ms
2.0
1.0
0.5
0.2
100
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
15
Figure 12. Forward Bias Safe Operating Area
2N3055A
dc
30
20
60
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
120
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device
100ms
Package
Shipping
2N3055AG
TO−204
(Pb−Free)
100 Units / Tray
MJ15015G
TO−204
(Pb−Free)
100 Units / Tray
MJ15016G
TO−204
(Pb−Free)
100 Units / Tray
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5
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N3055A/D
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