ISC 2N3055A

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N3055A
DESCRIPTION
·Excellent Safe Operating Area
·DC Current [email protected] = 4A
·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955A
APPLICATIONS
·Designed for high power audio, stepping motor and other
linear applications. It can also be used in power switching
circuits such as relay or solenoid drivers,DC-DC converters,
inverters, or for inductive loads.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEV
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power [email protected]=25℃
115
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
MAX
UNIT
1.52
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
1
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2N3055A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=200mA ; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 3.3A
3.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 15A; IB= 7A
5.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A ; VCE= 4V
1.8
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
0.7
mA
ICEX
Collector Cutoff Current
VCE= 100V; VBE(off)= 1.5V
VCE= 100V; VBE(off)= 1.5V,TC=150℃
5.0
30
mA
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC= 0
5.0
mA
hFE-1
DC Current Gain
IC= 4A; VCE= 2V
10
70
hFE-2
DC Current Gain
IC= 4A; VCE= 4V
20
70
hFE-3
DC Current Gain
IC= 10A; VCE= 4V
5
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 60V; t= 0.5s,Nonrepetitive
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
Current Gain-Bandwidth Product
IC= 1A; VCE= 4V; f= 1.0MHz
fT
CONDITIONS
MIN
MAX
60
UNIT
V
1.95
A
600
0.8
pF
MHz
Switching Times
td
Delay Time
tr
Rise Time
tstg
tf
Storage Time
IC= 4A; VCC= 30V; IB1= -IB2= 0.4A,
tp= 25μs; Duty Cycle≤ 2%
Fall Time
isc Website:www.iscsemi.cn
2
0.5
μs
4.0
μs
3.0
μs
6.0
μs