2N3442 D

2N3442
High−Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
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Features
• Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)
• Excellent Second Breakdown Capability
• Pb−Free Package is Available*
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS − 117 WATTS
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
140
Vdc
Collector−Base Voltage
VCB
160
Vdc
Emitter−Base Voltage
VEB
7.0
Vdc
Collector Current
− Continuous
− Peak
IC
10
15
Adc
Base Current
− Continuous
− Peak
IB
7.0
−
Adc
PD
117
0.67
W
W/_C
TJ, Tstg
−65 to +200
_C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.17
_C/W
Total Device Dissipation @ TC = 25_C
Derate above 25_C (Note 2)
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
2N3442G
AYWW
MEX
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
2N3442
G
A
Y
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
2N3442
2N3442G
Package
Shipping
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
Publication Order Number:
2N3442/D
2N3442
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
−
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
−
200
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
−
−
5.0
30
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
−
5.0
20
7.5
70
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
−
5.0
Vdc
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
−
5.7
Vdc
Current−Gain − Bandwidth Product (Note 4)
(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
fT
80
−
kHz
Small−Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
12
72
−
DYNAMIC CHARACTERISTICS
PD /PD(MAX), POWER DISSIPATION (NORMALIZED)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
175
200
2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION
20
IC, COLLECTOR CURRENT (AMP)
10 ms
There are two limitations on the power−handling
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC − VCE limits of the transistor that must be observed
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
10
dc
7.0
5.0
30 ms
3.0
50 ms
2.0
1.0
100 ms
TJ = 200°C
0.3
0.2
2.0 3.0
1.0 ms
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
0.7
0.5
100 ms
50 70 100
5.0 7.0 10
20 30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
200
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. 2N3442
400
TJ = 150°C
hFE , DC CURRENT GAIN
200
100
25°C
60
VCE = 4.0 V
−55 °C
40
20
10
6.0
4.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.4
1.2
IC = 1.0 A
2.0 A
4.0 A
8.0 A
1.0
0.8
0.6
0.4
0.2
TJ = 25°C
0
2.0
Figure 3. DC Current Gain
5.0
10
20
50
100 200
IB, BASE CURRENT (mA)
500
1.0k 2.0k
Figure 4. Collector−Saturation Region
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3
2N3442
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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2N3442/D
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