ETC 2N3442/D

ON Semiconductor
2N3442
High-Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
• Collector –Emitter Sustaining Voltage —
•
VCEO(sus) = 140 Vdc (Min)
Excellent Second Breakdown Capability
CASE 1–07
TO–204AA
(TO–3)
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*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
140
Vdc
Collector–Base Voltage
VCB
160
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
10
15**
Adc
Base Current — Continuous
Peak
IB
7.0
—
Adc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
117
0.67
Watts
W/C
TJ, Tstg
–65 to +200
C
Symbol
Max
Unit
RθJC
1.5
C/W
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
** This data guaranteed in addition to JEDEC registered data.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 10
1
Publication Order Number:
2N3442/D
2N3442
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
—
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
—
200
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
ICEX
—
—
5.0
30
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
5.0
20
7.5
70
—
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
—
5.0
Vdc
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
—
5.7
Vdc
Current–Gain — Bandwidth Product (2)
(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
fT
80
—
kHz
Small–Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
12
72
—
DYNAMIC CHARACTERISTICS
PD /PD(MAX), POWER DISSIPATION (NORMALIZED)
*Indicates JEDEC Registered Data.
NOTES:
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
2. fT = |hfe| • ftest
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
175
200
2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION
IC, COLLECTOR CURRENT (AMP)
20
10 µs
There are two limitations on the power–handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second
breakdown.
10
dc
7.0
5.0
30 µs
3.0
50 µs
2.0
1.0
100 µs
TJ = 200°C
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
0.7
0.5
0.3
0.2
2.0 3.0
1.0 ms
100 ms
50 70 100
5.0 7.0 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
400
TJ = 150°C
hFE, DC CURRENT GAIN
200
100
25°C
60
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. 2N3442
VCE = 4.0 V
-55°C
40
20
10
6.0
4.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.4
1.2
IC = 1.0 A
2.0 A
4.0 A
8.0 A
1.0
0.8
0.6
0.4
0.2
0
2.0
Figure 3. DC Current Gain
TJ = 25°C
5.0
10
20
50 100 200
IB, BASE CURRENT (mA)
500
1.0k 2.0k
Figure 4. Collector–Saturation Region
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3
2N3442
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
–T–
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
–Y–
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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2N3442/D