2N6107 D

2N6107, 2N6109, 2N6111 (PNP),
2N6288, 2N6292 (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
www.onsemi.com
Features
•
•
•
•
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
Symbol
Value
Unit
VCEO
30
50
70
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
7.0
Adc
ICM
10
Adc
Base Current
IB
3.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
40
0.32
W
W/°C
−65 to +150
°C
Collector Current − Peak
Operating and Storage Junction
Temperature Range
COLLECTOR 2, 4
COLLECTOR 2, 4
1
BASE
1
BASE
Vdc
40
60
80
TJ, Tstg
NPN
Vdc
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
Collector Current − Continuous
PNP
EMITTER 3
EMITTER 3
4
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2N6xxxG
AYWW
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.125
_C/W
2N6xxx
xxx
G
A
Y
WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 11
1
= Specific Device Code
= See Table on Page 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
Publication Order Number:
2N6107/D
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
Vdc
30
50
70
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N6111, 2N6288
(VCE = 40 Vdc, IB = 0)
2N6109
(VCE = 60 Vdc, IB = 0)
2N6107, 2N6292
ICEO
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6107, 2N6292
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
−
mAdc
−
1.0
−
1.0
−
1.0
−
100
−
100
−
100
−
2.0
−
2.0
−
2.0
−
1.0
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc)
All Devices
hFE
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
30
150
30
150
30
150
2.3
−
−
3.5
−
3.0
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
2N6288, 2N6292
2N6107, 2N6109, 2N6111
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
hfe
MHz
4.0
10
−
−
−
250
20
−
pF
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT = |hfe| • ftest
http://onsemi.com
2
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
VCC
+30 V
2.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
1.0
25 ms
RC
+11 V
0.7
0.5
SCOPE
t, TIME (s)
μ
RB
0
D1
51
-9.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.3
0.2
tr
0.1
0.07
0.05
-4 V
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
td @ VBE(off) ≈ 5.0 V
0.03
0.02
0.07 0.1
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
1.0
0.2 0.3
0.5
2.0
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
5.0 7.0
Figure 3. Turn−On Time
D = 0.5
0.2
0.1
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
3.0
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
http://onsemi.com
3
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
IC, COLLECTOR CURRENT (AMPS)
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
15
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 ms
0.5 ms
7.0
5.0
dc
3.0
2.0
0.1
ms
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
1.0
0.7
0.5
0.3
0.2
0.15
1.0
5.0 ms
2.0 3.0
20 30
50
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active−Region Safe Operating Area
300
5.0
t, TIME (s)
μ
2.0
ts
1.0
0.7
0.5
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
200
C, CAPACITANCE (pF)
3.0
tr
0.3
0.2
TJ = 25°C
Cib
100
70
Cob
50
0.1
0.07
0.05
0.07 0.1
0.2
1.0
0.3
0.5
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
30
0.5
5.0 7.0
1.0
Figure 6. Turn−Off Time
10
20
2.0 3.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
2N6107G
2N6107
TO−220
(Pb−Free)
50 Units / Rail
2N6109G
2N6109
TO−220
(Pb−Free)
50 Units / Rail
2N6111G
2N6111
TO−220
(Pb−Free)
50 Units / Rail
2N6288G
2N6288
TO−220
(Pb−Free)
50 Units / Rail
2N6292G
2N6292
TO−220
(Pb−Free)
50 Units / Rail
http://onsemi.com
4
30
50
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N6107/D
Similar pages