NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features • • • • • http://onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices 40 A, 1200 V VCEsat = 2.0 V Eoff = 1.10 mJ C Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C E A 80 40 200 A V $20 ±30 W 535 267 TSC 10 ms Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C G C TO−247 CASE 340AL E MARKING DIAGRAM G40N120FL2 AYWWG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTG40N120FL2WG © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTG40N120FL2W/D NGTG40N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.4 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7385 − pF Coes − 230 − Cres − 140 − Qg − 313 − Qge − 61 − Qgc − 151 − td(on) − 116 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V* tr − 42 − td(off) − 286 − tf − 121 − Eon − 3.4 − Eoff − 1.1 − Total switching loss Ets − 4.5 − Turn−on delay time td(on) − 111 − Turn−on switching loss Turn−off switching loss Rise time tr − 43 − td(off) − 304 − tf − 260 − Eon − 4.4 − Turn−off switching loss Eoff − 2.5 − Total switching loss Ets − 6.9 − Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V* ns mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB40N120FL2WG. http://onsemi.com 2 NGTG40N120FL2WG TYPICAL CHARACTERISTICS 160 TJ = 25°C 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 VGE = 20 V to 13 V 120 100 11 V 80 10 V 60 40 9V 20 0 7V 0 1 2 3 4 8V 5 7 6 8 100 11 V 80 10 V 60 9V 40 8V 20 7V 1 2 3 4 5 6 8 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 160 140 IC, COLLECTOR CURRENT (A) TJ = −55°C VGE = 20 V to 13 V 120 11 V 100 80 60 10 V 40 7V 20 9V 8V 0 1 2 3 4 5 6 7 140 120 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 0 8 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.50 100000 TJ = 25°C IC = 75 A 3.00 IC = 40 A 2.50 2.00 IC = 20 A 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V 120 0 160 0 TJ = 150°C 140 Cies 10000 1000 Coes 100 Cres 10 0.50 0.00 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs TJ Figure 6. Typical Capacitance http://onsemi.com 3 90 100 NGTG40N120FL2WG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 16 14 VCE = 600 V 12 10 8 6 4 VCE = 600 V VGE = 15 V IC = 40 A 2 0 0 50 100 200 150 250 300 350 QG, GATE CHARGE (nC) Figure 7. Typical Gate Charge 1000 5 4.5 3 2.5 Eoff 2 1.5 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 1 0 0 12 20 40 60 80 100 8 140 td(off) tf 100 tr 10 160 td(on) VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0 20 40 60 80 100 Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature Eon Eoff td(off) tf td(on) 100 tr VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 2 15 25 160 1000 4 5 140 TJ, JUNCTION TEMPERATURE (°C) 6 0 120 TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 10 120 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 3.5 0.5 SWITCHING LOSS (mJ) SWITCHING TIME (ns) Eon 4 35 45 55 65 75 10 85 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC http://onsemi.com 4 75 85 NGTG40N120FL2WG TYPICAL CHARACTERISTICS 10000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 40 A SWITCHING LOSS (mJ) 12 10 SWITCHING TIME (ns) 14 Eon 8 6 4 Eoff VCE = 600 V VGE = 15 V TJ = 150°C IC = 40 A 1000 td(off) td(on) tf 100 tr 2 0 5 15 25 35 55 45 65 75 10 5 85 15 25 35 45 55 65 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 12. Switching Loss vs. Rg Figure 13. Switching Time vs. Rg 75 85 1000 7 5 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 6 Eon 4 3 Eoff 2 VGE = 15 V TJ = 150°C IC = 40 A Rg = 10 W 1 0 350 400 450 500 550 600 650 700 750 100 tr VGE = 15 V TJ = 150°C IC = 40 A Rg = 10 W 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE 1000 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) tf td(on) 10 350 800 1000 50 ms 10 dc operation 100 ms 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 td(off) 1 10 100 1000 100 10 1 10000 VGE = 15 V, TC = 125°C 1 10 100 1000 10000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG40N120FL2WG TYPICAL CHARACTERISTICS 250 VCE = 600 V, RG = 10 W, VGE = 0/15 V 200 Ipk (A) TC = 80°C 150 TC = 80°C TC = 110°C 100 50 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 18. Collector Current vs. Switching Frequency SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJA = 0.28 50% Duty Cycle 0.1 0.01 20% 10% 5% R1 Junction R2 Rn Case 2% C1 0.001 0.0001 1E−06 Ci (J/°C) 0.006487 0.023120 0.061163 0.092651 1.252250 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 1E−05 Cn C2 Ri (°C/W) 0.048747 0.043252 0.051703 0.107932 0.025253 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 19. IGBT Transient Thermal Impedance http://onsemi.com 6 0.1 1 NGTG40N120FL2WG Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTG40N120FL2WG Figure 21. Definition of Turn On Waveform http://onsemi.com 8 NGTG40N120FL2WG Figure 22. Definition of Turn Off Waveform http://onsemi.com 9 NGTG40N120FL2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A E E2/2 B A NOTE 4 SEATING PLANE Q E2 D 2 B A 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M NOTE 6 S NOTE 3 1 M P A NOTE 4 0.635 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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