NGTB50N120FL2W D

NGTB50N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
50 A, 1200 V
VCEsat = 2.20 V
Eoff = 1.40 mJ
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
A
G
100
50
C
200
A
A
50N120FL2
AYWWG
W
535
267
10
ms
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
May, 2015 − Rev. 5
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
MARKING DIAGRAM
100
50
TSC
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
TO−247
CASE 340AL
E
1
Device
NGTB50N120FL2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB50N120FL2W/D
NGTB50N120FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
−
−
2.20
2.60
2.40
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.1
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7383
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
233
−
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Cres
−
139
−
Gate charge total
Qg
−
311
−
Gate to emitter charge
Qge
−
64
−
Qgc
−
155
−
td(on)
−
118
−
tr
−
48
−
td(off)
−
282
−
tf
−
113
−
Eon
−
4.40
−
Turn−off switching loss
Eoff
−
1.40
−
Total switching loss
Ets
−
5.80
−
Turn−on delay time
td(on)
−
114
−
tr
−
49
−
td(off)
−
298
−
VCE = 600 V, IC = 50 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15V
Rise time
Turn−off delay time
Fall time
TJ = 175°C
VCC = 600 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15V
ns
mJ
ns
tf
−
243
−
Eon
−
5.65
−
Turn−off switching loss
Eoff
−
3.26
−
Total switching loss
Ets
−
8.91
−
VF
−
−
2.00
2.55
2.60
−
V
Turn−on switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery current
Reverse recovery time
Reverse recovery charge
TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery current
trr
−
256
−
ns
Qrr
−
2.7
−
mc
Irrm
−
19
−
A
trr
−
400
−
ns
Qrr
−
5.75
−
mc
Irrm
−
27
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
200
TJ = 25°C
180
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
200
VGE = 20 V
to 13 V
140
120
100
11 V
80
10 V
60
40
20
9V
8V
7V
0
1
2
3
4
5
7
6
140
120
100
11 V
80
10 V
60
9V
40
8V
20
7V
1
8
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
200
8
200
TJ = −55°C
VGE = 20 V
to 13 V
160
IC, COLLECTOR CURRENT (A)
180
140
120
11 V
100
80
60
10 V
40
7V
20
9V
8V
0
0
1
2
3
4
5
6
7
180
160
140
120
100
80
60
40
TJ = 150°C
20
TJ = 25°C
0
0
8
1
2
3
4
5
6
7
8
9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.50
100000
4.00
IC = 100 A
3.50
3.00
IC = 50 A
2.50
IC = 25 A
2.00
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 20 V
to 13 V
160
0
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
180
Cies
10000
1000
Coes
100
Cres
10
0.50
0.00
−75 −50 −25
TJ = 25°C
1
0
25
50
75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
90 100
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
TJ = 25°C
50
TJ = 150°C
40
30
20
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE = 600 V
10
8
6
4
VCE = 600 V
VGE = 15 V
IC = 50 A
2
0
4.0
50
100
250
200
150
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
6
300
350
1000
SWITCHING TIME (ns)
Eon
5
SWITCHING LOSS (mJ)
12
0
0
4
3
Eoff
2
VCE = 600 V
VGE = 15 V
IC = 50 A
Rg = 10 W
1
0
td(off)
tf
100
td(on)
tr
VCE = 600 V
VGE = 15 V
IC = 50 A
Rg = 10 W
10
0
20
40
60
80
100
120
140
0
160
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
160
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
8
SWITCHING TIME (ns)
12
SWITCHING LOSS (mJ)
14
Eon
6
Eoff
4
td(off)
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
IC = 50 A
Rg = 10 W
2
0
5
15
25
35
45
55
65
75
10
85
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
75
85
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
10000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 50 A
SWITCHING LOSS (mJ)
16
14
12
SWITCHING TIME (ns)
18
Eon
10
8
6
Eoff
4
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 50 A
1000
td(off)
td(on)
tf
100
tr
2
0
5
15
25
35
55
45
65
75
10
5
85
15
25
35
45
55
65
75
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
85
1000
9
7
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
8
Eon
6
5
4
Eoff
3
VGE = 15 V
TJ = 150°C
IC = 50 A
Rg = 10 W
2
1
0
350
400
450
500
550
600 650
700
750
td(on)
100
tr
VGE = 15 V
TJ = 150°C
IC = 50 A
Rg = 10 W
400
450
500
550
600 650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
tf
10
350
800
1000
100
dc operation
50 ms
10
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
td(off)
1
10
1 ms
100
10
VGE = 15 V, TC = 125°C
1
100
1000
1
10000
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB50N120FL2WG
Qrr, REVERSE RECOVERY CHARGE (mC)
TYPICAL CHARACTERISTICS
trr, REVERSE RECOVERY TIME (ns)
450
400
350
TJ = 175°C, IF = 50 A
300
250
200
150
TJ = 25°C, IF = 50 A
100
50
300
500
700
900
1100
1300
TJ = 175°C, IF = 50 A
6
5
4
TJ = 25°C, IF = 50 A
3
2
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/m)
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 19. trr vs. diF/dt (VR = 400 V)
Figure 20. Qrr vs. diF/dt (VR = 400 V)
70
1300
VF, FORWARD VOLTAGE (V)
3.5
60
TJ = 175°C, IF = 50 A
50
40
30
TJ = 25°C, IF = 50 A
20
100
300
500
700
900
1100
IF = 75 A
3.0
IF = 50 A
2.5
2.0
IF = 25 A
1.5
1.0
−75 −50 −25
10
1300
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/m)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt (VR = 400 V)
Figure 22. VF vs. TJ
250
VCE = 600 V, RG = 10 W, VGE = 0/15 V
TC = 80°C
200
Ipk (A)
Irm, REVERSE RECOVERY CURRENT (A)
100
7
150
100
TC = 110°C
50
0
0.01
0.1
1
10
100
FREQUENCY (kHz)
Figure 23. Collector Current vs. Switching
Frequency
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6
1000
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.28
50% Duty Cycle
0.1
20%
10%
5%
0.01
R1
Junction
R2
Rn
Case
2%
C1
0.001
1E−05
Ci (J/°C)
0.006487
0.023120
0.061163
0.092651
1.252250
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
1E−06
Cn
C2
Ri (°C/W)
0.048747
0.043252
0.051703
0.107932
0.025253
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 24. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.50
50% Duty Cycle
0.1
20%
10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
0.01
Single Pulse
0.001
1E−06
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1E−05
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 25. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
Ci (J/°C)
0.007703
0.010613
0.010097
0.032329
0.046791
0.044179
0.083870
0.000130
0.000942
0.003132
0.003093
0.006758
0.022635
0.119232
0.044938
0.703706
0.217376
0.460033
0.1
1
NGTB50N120FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB50N120FL2W/D