NGD8201N D

NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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20 A, 400 V
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
•
•
•
•
•
•
•
•
•
Ideal for Coil−on−Plug and Driver−on−Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are Pb−Free Devices
C
RG
G
RGE
E
Applications
1
• Ignition Systems
DPAK
CASE 369C
STYLE 7
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
440
V
Collector−Gate Voltage
VCER
440
V
Gate−Emitter Voltage
VGE
"15
V
Rating
MARKING DIAGRAM
1
G
YWW
NGD
8201xG
C
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
E
Continuous Gate Current
IG
1.0
mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
2.0
kV
Y
WW
NGD8201x
x
G
8.0
kV
ESD (Charged−Device Model)
ESD
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
PD
125
0.83
W
W/°C
TJ, Tstg
−55 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating & Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 11
1
C
= Year
= Work Week
= Device Code
= N or A
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
NGD8201NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NGD8201ANT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGD8201N/D
NGD8201N, NGD8201AN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Symbol
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
Value
250
200
180
EAS(R)
2000
Unit
mJ
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.2
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
95
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper).
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
370
395
420
V
IC = 10 mA
TJ = −40°C to 175°C
390
415
440
VGE = 0 V, VCE = 15 V
TJ = 25°C
0.1
1.0
mA
mA
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Clamp
Voltage
Reverse Collector−Emitter Leakage
Current
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
ICES
TJ = 25°C
0.5
1.5
10
VCE = 200 V,
VGE = 0 V
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
IC = −75 mA
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
BVCES(R)
ICES(R)
TJ = 25°C
0.05
0.1
1.0
VCE = −24 V −
NGD8201N
TJ = 175°C
1.0
5.0
10
TJ = −40°C
0.005
0.01
0.1
TJ = 25°C
0.05
0.2
1.0
VCE = −24 V −
NGD8201AN
TJ = 175°C
1.0
8.5
25
TJ = −40°C
0.005
0.025
0.2
V
mA
BVGES
IG = "5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
IGES
VGE = "5.0 V
TJ = −40°C to 175°C
200
300
350*
mA
Gate Resistor
RG
TJ = −40°C to 175°C
70
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
16
25
kW
VGE(th)
TJ = 25°C
1.5
1.8
2.1
V
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
4.0
4.6
5.2
W
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IC = 1.0 mA, VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
mV/°C
NGD8201N, NGD8201AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.15
1.35
V
TJ = 175°C
0.7
0.95
1.15
TJ = −40°C
1.0
1.3
1.4
TJ = 25°C
0.85
1.03
1.35
TJ = 175°C
0.7
0.9
1.15
TJ = −40°C
0.9
1.11
1.4
TJ = 25°C
0.95
1.25
1.45
TJ = 175°C
0.8
1.05
1.25
TJ = −40°C
1.1
1.4
1.5
TJ = 25°C
0.9
1.11
1.45
TJ = 175°C
0.8
1.01
1.25
TJ = −40°C
1.0
1.18
1.5
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.5 A, VGE = 3.7 V −
NGD8201N
IC = 6.5 A, VGE = 3.7 V −
NGD8201AN
IC = 9.0 A, VGE = 3.9 V −
NGD8201N
IC = 9.0 A, VGE = 3.9 V −
NGD8201AN
IC = 7.5 A, VGE = 4.5 V
IC = 10 A, VGE = 4.5 V
IC = 15 A, VGE = 4.5 V
IC = 20 A, VGE = 4.5 V −
NGD8201N
IC = 20 A, VGE = 4.5 V −
NGD8201AN
Forward Transconductance
gfs
IC = 6.0 A, VCE = 5.0 V
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
TJ = 25°C
1.3
1.6
1.9
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.4
1.75
2.0
TJ = 25°C
1.1
1.4
1.9
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.3
1.42
2.0
TJ = 25°C
10
18
25
Mhos
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1100
1300
1500
Output Capacitance
COSS
70
80
90
Transfer Capacitance
CRSS
18
20
22
f = 10 kHz, VCE = 25 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
TJ = 25°C
NGD8201N, NGD8201AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
6.0
8.0
10
mSec
TJ = 175°C
6.0
8.0
10
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW, RL = 33 W,
VGE = 5.0 V
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW,
L = 300 mH, VGE = 5.0 V
td(on)
tr
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5 W,
VGE = 5.0 V
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4
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
NGD8201N, NGD8201AN
TYPICAL ELECTRICAL CHARACTERISTICS
400
30
TJ = 25°C
IA, AVALANCHE CURRENT (A)
SCIS ENERGY (mJ)
350
300
250
TJ = 175°C
200
150
100
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
50
0
0
2
6
4
L = 1.8 mH
20
L = 3.0 mH
15
10
L = 10 mH
5
0
−50
10
8
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
25
−25
INDUCTOR (mH)
60
2.0
IC = 25 A
IC = 20 A
1.5
IC = 15 A
1.25
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25
VGE = 4.5 V
0.0
−50
−25
0
25
50
75
100
125
150
50
75
100
125
150 175
4V
TJ = 175°C
40
3.5 V
30
3V
20
2.5 V
10
0
175
4.5 V
5V
0
2
1
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
60
VGE = 10 V
50
4.5 V
4V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50
VGE = 10 V
TJ, JUNCTION TEMPERATURE (°C)
5V
40
TJ = 25°C
3.5 V
30
20
3V
10
0
25
Figure 2. Open Secondary Avalanche Current
vs. Temperature
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Self Clamped Inductive Switching
1.75
0
TJ, JUNCTION TEMPERATURE (°C)
2.5 V
0
1
2
3
4
5
6
7
VGE = 10 V
4V
50
5V
40
TJ = −40°C
3.5 V
30
20
3V
10
0
8
4.5 V
2.5 V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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5
8
NGD8201N, NGD8201AN
TYPICAL ELECTRICAL CHARACTERISTICS
10000
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
IC, COLLECTOR CURRENT (A)
45
VCE = 5 V
40
1000
35
30
25
20
TJ = 25°C
15
10
TJ = 175°C
5
0
0
1
0.5
1.5
TJ = −40°C
2
2.5
3
3.5
4
10
VCE = 200 V
1.0
0.1
−50
−25
0
25
75
50
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.25
Mean
Mean + 4 s
2.00
1.75
C, CAPACITANCE (pF)
GATE THRESHOLD VOLTAGE (V)
100
VGE, GATE TO EMITTER VOLTAGE (V)
2.50
Mean − 4 s
1.50
1.25
1.00
0.75
0.50
Ciss
1000
Coss
100
Crss
10
1.0
0.25
0
−50
−25
0
25
50
75
100
125
150
0.1
175
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
25
12
10
10
SWITCHING TIME (ms)
tfall
8
tdelay
6
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
4
2
0
25
0
TJ, JUNCTION TEMPERATURE (°C)
12
SWITCHING TIME (ms)
VCE = −24 V
50
75
100
125
150
8
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
tdelay
6
tfall
4
2
0
25
175
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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6
175
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
NGD8201N, NGD8201AN
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.1
t1
t2
Single Pulse
0.01
0.000001
DUTY CYCLE, D = t1/t2
0.00001
0.0001
0.001
0.1
0.01
TJ(pk) − TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t ≤ 0.1 s
1
10
100
1000
t,TIME (S)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
t1
0.02
0.01
0.01
0.000001
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
TJ(pk) − TA = P(pk) RqJC(t)
0.0001
0.001
0.01
0.1
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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7
1
10
NGD8201N, NGD8201AN
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NGD8201N/D