NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. www.onsemi.com 18 AMPS 450 VOLTS VCE(on) 3 2.1 V @ IC = 10 A, VGE . 4.5 V Features • • • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short−Circuit Capability This is a Pb−Free Device C G RGE E 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 500 VDC Collector−Gate Voltage VCER 500 VDC Gate−Emitter Voltage VGE 18 VDC IC 18 50 ADC AAC Rating Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 400 V PD 115 0.77 Watts W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range kV 8.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 DPAK CASE 369C STYLE 7 MARKING DIAGRAM 1 Gate 2 Collector YWW G18 N45BG 4 Collector 3 Emitter G18N45B Y WW G = Device Code = Year = Work Week = Pb−Free Device ORDERING INFORMATION Device NGD18N45CLBT4G Package Shipping† DPAK 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 1 1 Publication Order Number: NGD18N45CLB/D NGD18N45CLB UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (Note 2) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 26.0 A, RG = 1000 W, L = 1.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 10.0 A, RG = 1000 W, L = 8.4 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 15.4 A, RG = 1000 W, L = 2.0 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 5.7 A, RG = 1000 W, L = 15.2 mH, Starting TJ = 150°C EAS Value Unit mJ 338 420 237 247 MAXIMUM SHORT−CIRCUIT TIMES Short Circuit Withstand Time – Test 1 (See Figure 17, 3 Pulses with 10 ms Period, Ta = 105°C) tsc1−1 1000 mS Short Circuit Withstand Time – Test 1 (See Figure 17, 3 Pulses with 10 ms Period, Ta = 150°C) tsc1−2 800 mS Short Circuit Withstand Time – Test 2 (See Figure 18, 3 Pulses with 10 ms Period, Ta = 105°C) tsc2−1 5 ms Short Circuit Withstand Time – Test 2 (See Figure 18, 3 Pulses with 10 ms Period, Ta = 150°C) tsc2-2 1 ms RθJC 1.3 °C/W RθJA 95 °C/W TL 275 °C THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit IC = 2.0 mA TJ = −40°C to 150°C 430 455 470 VDC IC = 10 mA TJ = −40°C to 150°C 440 475 500 TJ = 25°C − 0.5 20 TJ = 150°C − 75 250 TJ = −40°C − 0.2 10 TJ = 25°C − − 2.0 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25 TJ = −40°C − 0.1 1.0 TJ = 25°C 24 27 30 TJ = 150°C 26 29 33 TJ = −40°C 23 26 29 IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC VGE = 10 V TJ = −40°C to 150°C 384 590 700 mADC − TJ = −40°C to 150°C 10 16 26 kW OFF CHARACTERISTICS (Note 2) Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current BVCES ICES VCE = 350 V, VGE = 0 V VCE = 15 V, VGE = 0 V Reverse Collector−Emitter Leakage Current IECS VCE = −24 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Gate−Emitter Clamp Voltage BVGES Gate−Emitter Leakage Current IGES Gate Emitter Resistor RGE 1. When surface mounted to an FR4 board using the minimum recommended pad size. www.onsemi.com 2 mADC mA VDC NGD18N45CLB ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.1 1.56 1.9 VDC TJ = 150°C 0.75 1.08 1.4 TJ = −40°C 1.2 1.75 2.1 IC = 7 A, VGE = 4.5 V TJ = −40°C to 150°C 1.10 1.84 2.30 IC = 7 A, VGE = 4.0 V TJ = −40°C to 150°C 1.15 1.89 2.35 IC = 7 A, VGE = 3.7 V TJ = −40°C to 150°C 1.20 1.93 2.50 IC = 10 A, VGE = 4.5 V TJ = −40°C to 150°C 1.45 2.07 2.65 IC = 10 A, VGE = 4.0 V TJ = −40°C to 150°C 1.50 2.13 2.80 IC = 10 A, VGE = 3.7 V TJ = −40°C to 150°C 1.55 2.19 2.85 IC = 10 mA, VGE = 4.5 V TJ = −40°C to 150°C − 0.65 1.00 − − − − 3.5 − mV/°C gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 6.0 14 25 Mhos 400 780 1000 pF VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C 50 72 100 4.0 6 10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Collector−to−Emitter On−Voltage Threshold Temperature Coefficient (Negative) Forward Transconductance VCE(on) V DYNAMIC CHARACTERISTICS (Note 2) Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS SWITCHING CHARACTERISTICS (Note 2) Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time td(off) VCC = 300 V, VGE = 5 V RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C 1.0 2.9 12 tf VCC = 300 V, VGE = 5 V RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C 1.0 2.5 7.0 td(on) VCC = 14 V, VGE = 5 V RG = 1.0 kΩ, RL = 1 Ω TJ = 25°C 0.1 0.42 1.4 tr VCC = 14 V, VGE = 5 V RG = 1.0 kΩ, RL = 1 Ω TJ = 25°C 1.0 2.5 9.0 mSec mSec 2. Electrical Characteristics at temperature other than 25°C, Dynamic and Switching characteristics are not subject to production testing. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGD18N45CLB TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 60 VGE = 10 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VGE = 10 V 50 5V 40 4.5 V TJ = 25°C 30 4V 3.5 V 20 3V 10 2.5 V 0 5V 4.5 V 40 TJ = −40°C 1 2 3 4 5 7 6 3.5 V 20 3V 10 2.5 V 0 8 2 1 3 4 6 5 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 55 60 IC, COLLECTOR CURRENT (A) VGE = 10 V 50 40 5V TJ = 150°C 30 4.5 V 4V 20 3.5 V 3V 10 2.5 V 0 1 2 4 3 5 6 7 50 VCE = 10 V 45 TJ = −40°C TJ = 150°C 40 35 30 TJ = 25°C 25 20 15 10 5 0 0 0 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) IC = 20 A IC = 25 A 3.5 3.0 IC = 15 A 2.5 IC = 10 A 2.0 IC = 5 A 1.5 1.0 0.5 0 −50 VGE = 5 V −25 0 25 50 75 100 2 3 4 5 6 7 8 Figure 4. Transfer Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4.0 1 VGE, GATE TO EMITTER VOLTAGE (V) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4V 30 0 0 IC, COLLECTOR CURRENT (A) 50 125 150 3.5 TJ = 25°C 3.0 IC = 15 A 2.5 IC = 10 A 2.0 IC = 5 A 1.5 1.0 0.5 0 4 TJ, JUNCTION TEMPERATURE (°C) 5 6 7 8 9 VGE, GATE TO EMITTER VOLTAGE (V) Figure 5. Collector−to−Emitter Saturation Voltage vs. Junction Temperature Figure 6. Collector−to−Emitter Voltage vs. Gate−to−Emitter Voltage www.onsemi.com 4 10 10000 3.5 IC = 15 A 2.5 IC = 10 A 2.0 C, CAPACITANCE (pF) 3.0 TJ = 150°C IC = 5 A 1.5 1.0 1000 Ciss 100 Coss 10 Crss 0 0 4 5 6 7 8 9 0 10 20 40 60 80 140 160 180 200 100 120 VGE, GATE TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 7. Collector−to−Emitter Voltage vs. Gate−to−Emitter Voltage Figure 8. Capacitance Variation 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 25°C 150°C 10 0.2 0 −50 −30 −10 1 10 30 50 70 90 110 130 150 10 1 TJ, JUNCTION TEMPERATURE (°C) L, INDUCTANCE (mH) Figure 9. Gate Threshold Voltage vs. Junction Temperature Figure 10. Minimum Open Secondary Latch Current vs. Inductance 12 100 10 SWITCHING TIME (ms) IL, LATCH CURRENT (A) 1 0.5 IL, LATCH CURRENT (A) VGE(th), GATE THRESHOLD VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) NGD18N45CLB 25°C 150°C 10 8 VCC = 300 V VGE = 5.0 V RG = 1000 Ω IC = 10 A L = 300 mH tf 6 td(off) 4 2 1 1 0 −50 −30 −10 10 10 30 50 70 90 110 130 150 L, INDUCTANCE (mH) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current vs. Inductance Figure 12. Inductive Switching Fall Time vs. Temperature www.onsemi.com 5 NGD18N45CLB 100 DC COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 100 10 100 ms 1 ms 1 10 ms 100 ms 0.1 0.01 10 DC 1 100 ms 0.1 100 ms 0.01 1 10 100 1000 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (V) COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 100 COLLECTOR CURRENT (A) t1 = 1 ms, D = 0.05 COLLECTOR CURRENT (A) 1 ms 10 ms t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 1 10 100 1000 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (V) COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 0V 5.0 V 0V VIN RG = 1 kW tsc1 VIN RG = 1 kW tsc2 RS = 33 mW Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 www.onsemi.com 6 NGD18N45CLB 100 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) Single Pulse t1 0.001 t2 DUTY CYCLE, D = t1/t2 TJ(pk) − TA = P(pk) RqJA(t) RqJC X R(t) for t ≤ 0.2 s 0.0001 0.00001 0.0001 0.001 0.01 0.1 t,TIME (S) Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) www.onsemi.com 7 1 NGD18N45CLB PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS SOLDERING FOOTPRINT* 2.58 0.102 5.80 0.228 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ROTATED 905 CW 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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