ENA1511 D

Ordering number : ENA1511B
MCH3914
N-Channel JFET
http://onsemi.com
15V, 16 to 50mA, 29mS, MCPH3
Features
•
•
•
•
•
| yfs | is large
Ciss is small
Small package
FBET process
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
15
V
Gate-to-Drain Voltage
VGDS
--15
V
Gate Current
IG
5
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
300
mW
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (600mm2×0.8mm)
mA
150
°C
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7019A-006
0.15
0.25
2.0
MCH3914-7-TL-H
MCH3914-8-TL-H
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1.6
0 to 0.02
J
R
A
N
K
LOT No.
LOT No.
2.1
3
TL
0.25
1
0.65
2
0.3
Electrical Connection
0.07
0.85
3
1 : Source
2 : Drain
3 : Gate
MCPH3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42514HK TC-00003115/80812TKIM/72209TKIM AC No. A1511-1/4
MCH3914
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
VGS(off)
IDSS
Zero-Gate Voltage Drain Current
Ciss
Reverse Transfer Capacitance
Crss
IG=--10µA, VDS=0V
VGS=--10V, VDS=0V
VDS=5V, ID=10µA
typ
Unit
max
--15
V
--1.0
--0.6
--1.4
16.0*
VDS=5V, ID=10mA, f=1kHz
VDS=5V, VGS=0V, f=1kHz
| yfs |2
Input Capacitance
min
VDS=5V, VGS=0V
| yfs |1
Forward Transfer Admittance
Ratings
Conditions
nA
--3.0
V
50.0*
mA
14
21
mS
14
29
mS
4.9
pF
1.4
pF
VDS=5V, VGS=0V, f=1MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
* : The MCH3914 is classified by IDSS as follows : (unit : mA)
Rank
7
8
IDSS
16.0 to 32.0
25.0 to 50.0
Ordering Information
Package
Shipping
MCH3914-7-TL-H
Device
MCPH3
3,000pcs./reel
MCH3914-8-TL-H
MCPH3
3,000pcs./reel
ID -- VDS
24
60
VGS=0V
Pb Free and Halogen Free
ID -- VGS
VDS=5V
50
--0.2V
16
12
--0.4V
8
--0.6V
--0.8V
4
40
30
A
m
0
=5
SS
32
m
A
Drain Current, ID -- mA
20
Drain Current, ID -- mA
memo
A
m
25
A
m
20
ID
20
10
mA
16
--1.0V
0
0
4
8
12
16
Drain-to-Source Voltage, VDS -- V
20
HDR02811
0
--2.8
--2.4
--2.0
--1.6
--1.2
--0.8
Gate-to-Source Voltage, VGS -- V
--0.4
0
IT14783
No. A1511-2/4
MCH3914
ID -- VGS
VDS=5V
IDSS=25mA
°C
30
Ta
=-2
5
20
75
10
--1.6
--1.2
--0.8
VGS(off) -- IDSS
7
2
5
3
Drain Current, IDSS -- mA
1.0
7
3
5
7
7
2
10
3
5
10
2
Drain-to-Source Voltage, VDS -- V
ITR02817
7
100
IT14784
Ciss -- VDS
VGS=0V
f=1MHz
3
2
7
1.0
2
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
PD -- Ta
350
2
2
5
5
100
IT14785
VGS=0V
f=1MHz
1.0
| yfs | (I =1
D 0mA)
1.0
7
3
5
7
2
Drain Current, IDSS -- mA
Crss -- VDS
5
| yfs |
7
--1.0
10
=0V)
(VGS
3
10
2
7
5
ITR02813
VDS=5V
ID=10µA
5
VDS=5V
f=1kHz
7
10
0
Input Capacitance, Ciss -- pF
Cutoff Voltage, VGS(off) -- V
°C
3
5
Reverse Transfer Capacitance, Crss -- pF
°C
--0.4
Gate-to-Source Voltage, VGS -- V
5
25
Allowable Power Dissipation, PD -- mW
Drain Current, ID -- mA
40
0
--2.0
| yfs | -- IDSS
100
Forward Transfer Admittance, | yfs | -- mS
50
ITR02816
When mounted on ceramic substrate
(600mm2×0.8mm)
300
250
200
150
100
50
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14786
No. A1511-3/4
MCH3914
Outline Drawing
MCH3914-7-TL-H, MCH3914-8-TL-H
Land Pattern Example
Mass (g) Unit
0.007 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
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PS No. A1511-4/4
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