2N7002L D

2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
60 V
7.5 W @ 10 V,
500 mA
115 mA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
60
Vdc
Drain−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
ID
ID
mAdc
IDM
±115
±75
±800
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
− Continuous TC = 25°C (Note 1)
− Continuous TC = 100°C (Note 1)
− Pulsed (Note 2)
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
N−Channel
3
1
2
Characteristic
Symbol
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD
Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
MARKING
DIAGRAM
3
THERMAL CHARACTERISTICS
RqJA
PD
RqJA
TJ, Tstg
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
300
2.4
417
mW
mW/°C
°C/W
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
2
702 MG
G
SOT−23
CASE 318
STYLE 21
1
702
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
2N7002LT1G
2N7002LT3G
Package
Shipping†
SOT−23
(Pb−Free)
3000 Tape & Reel
2V7002LT1G
2V7002LT3G
2N7002LT1H*
10,000 Tape & Reel
3000 Tape & Reel
SOT−23
(Pb−Free)
10,000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 7
1
Publication Order Number:
2N7002L/D
2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
−
−
Vdc
IDSS
−
−
−
−
1.0
500
mAdc
Gate−Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
−
−
100
nAdc
Gate−Body Leakage Current, Reverse
(VGS = −20 Vdc)
IGSSR
−
−
−100
nAdc
VGS(th)
1.0
−
2.5
Vdc
On−State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
ID(on)
500
−
−
mA
Static Drain−Source On−State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
−
−
−
−
3.75
0.375
−
−
−
−
−
−
−
−
7.5
13.5
7.5
13.5
gFS
80
−
−
mS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
−
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
−
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
−
5.0
pF
td(on)
−
−
20
ns
td(off)
−
−
40
ns
VSD
−
−
−1.5
Vdc
IS
−
−
−115
mAdc
ISM
−
−
−800
mAdc
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static Drain−Source On−State Resistance
(VGS = 10 V, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
rDS(on)
Vdc
Ohms
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 W, RL = 50 W, Vgen = 10 V)
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
2N7002L, 2V7002L
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
VGS = 10 V
1.4
9V
1.2
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
9.0
0.8
125°C
0.6
0.4
0.2
10
0
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-55°C
+100
+140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
Figure 3. Temperature versus Static
Drain−Source On−Resistance
-20
+20
+60
T, TEMPERATURE (°C)
+100
Figure 4. Temperature versus Gate
Threshold Voltage
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3
+140
2N7002L, 2V7002L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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