ENA1907 D

Ordering number : ENA1907B
BMS3003
P-Channel Power MOSFET
–60V, –78A, 6.5mΩ, TO-220F-3SG
http://onsemi.com
Features
•
•
•
ON-resistance RDS(on)1=5.0mΩ (typ.)
Input capacitance Ciss=13200pF (typ.)
-4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--60
V
±20
V
--78
A
--312
A
2.0
W
Allowable Power Dissipation
PD
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
420
mJ
--60
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=--36V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ.)
7529-001
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./tube
BMS3003-1E
4.7
10.16
3.18
15.87
6.68
3.3
Electrical Connection
2
A
MS3003
3.23
15.8
Marking
2.54
LOT No.
1
12.98
2.76
1.47 MAX
DETAIL-A
0.8
1
2
3
0.5
FRAME
2.54
2.54
( 1.0)
EMC
3
(0.84)
1 : Gate
2 : Drain
3 : Source
TO-220F-3SG
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40714 TKIM/91212 TKIM TC-00002812/D2210QA TKIM TC-00002546 No.A1907-1/5
BMS3003
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
typ
Unit
max
--60
V
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--39A
130
RDS(on)1
ID=--39A, VGS=--10V
5.0
6.5
mΩ
RDS(on)2
ID=--39A, VGS=--4V
6.5
9.0
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
--1.2
--10
μA
±10
μA
--2.6
VDS=--20V, f=1MHz
V
S
13200
pF
1300
pF
Reverse Transfer Capacitance
Crss
950
pF
Turn-ON Delay Time
td(on)
90
ns
Rise Time
tr
360
ns
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=--78A, VGS=0V
Reverse Recovery Time
trr
See Fig.3
150
ns
Reverse Recovery Charge
Qrr
IS=--78A, VGS=0V, di/dt=--100A/μs
470
nC
See Fig.2
1200
ns
680
ns
285
nC
35
nC
VDS=--36V, VGS=--10V, ID=--78A
70
nC
--0.95
--1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
D
0V
-10V
L
≥50Ω
RG
G
VDD= -36V
VIN
ID= -39A
RL=0.92Ω
VIN
BMS3003
0V
-10V
Fig.2 Switching Time Test Circuit
S
50Ω
VDD
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
BMS3003
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BMS3003
D
L
G
VDD
S
Driver MOSFET
Ordering Information
Device
BMS3003-1E
Package
Shipping
memo
TO-220F-3SG
50pcs./tube
Pb Free
No.A1907-2/5
BMS3003
--60
--40
--80
--60
--40
--20
--20
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Drain to Source Voltage, VDS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID= --39A
Single pulse
14
12
10
8
Tc=75°C
6
25°C
--25°C
4
2
0
0
--1
--2
--3
--4
--5
--6
--7
--8
2
°C
°C
-25
=c
T
C
75°
3
2
10
7
5
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
3
2
tr
td(on)
100
7
5
3
9A
= --3
V, I D
4
9A
=
= --3
VGS
0V, I D
1
=
VGS
8
6
4
2
--25
0
25
50
75
100
125
150
IT16242
IS -- VSD
VGS=0V
Single pulse
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
100000
7
5
--1.4
IT16244
f=1MHz
Ciss
3
2
Coss
1000
7
5
Crss
3
2
2
10
--0.1
--5.0
IT16240
10000
7
5
tf
3
2
--4.5
10
--0.1
7
5
3
2
--0.01
Ciss, Coss, Crss -- pF
1000
7
5
--4.0
12
3
2
td(off)
--3.5
Single pulse
--1000
7
5
3
2
5 7 --100
VDD= --36V
VGS= --10V
--3.0
14
IT16243
SW Time -- ID
10000
7
5
--2.5
Case Temperature, Tc -- °C
2
3
--2.0
RDS(on) -- Tc
0
--50
3
2
--1.5
16
--10
3
1.0
--0.1
Switching Time, SW Time -- ns
--9
VDS= --10V
25
--1.0
IT16241
| yfs | -- ID
100
7
5
--0.5
Gate to Source Voltage, VGS -- V
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
Gate to Source Voltage, VGS -- V
1000
7
5
0
IT16239
RDS(on) -- VGS
16
0
--1.4
Tc=
75°C
25°C
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
25°
C
VGS= --3V
--25°C
--80
--100
Tc=7
5°C
--25
°C
Drain Current, ID -- A
--100
--120
75° C
--140
0V
--120
VDS= --10V
25°
C
V
--4
--1
Drain Current, ID -- A
--140
ID -- VGS
--160
--6
V
--8
V
Tc=25°C
Tc= --2
5°C
ID -- VDS
--160
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT16245
100
0
--5
--10
--15
--20
--25
Drain to Source Voltage, VDS -- V
--30
IT16246
No.A1907-3/5
BMS3003
VGS -- Qg
--10
--8
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
--9
--100
7
5
3
2
--7
--6
--5
--4
--3
--1
0
50
100
150
200
250
Total Gate Charge, Qg -- nC
PD -- Ta
1.0
0.5
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
EAS -- Ta
120
140
160
IT16249
10
μs
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain to Source Voltage, VDS -- V
PD -- Tc
45
1.5
0μ
s
Operation in
this area is
limited by RDS(on).
IT16247
2.0
0
Avalanche Energy derating factor -- %
300
10
1m
s
1
10 0ms
0m
DC
s
op
era
tio
n
ID= --78A
--0.1
--0.1
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
2.5
IDP= --312A (PW≤10μs)
--10
7
5
3
2
--1.0
7
5
3
2
--2
0
ASO
--1000
7
5
3
2
VDS= --36V
ID= --78A
5 7 --100
IT16248
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT16250
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16251
No.A1907-4/5
BMS3003
Outline Drawing
BMS3003-1E
Mass (g) Unit
1.8
mm
* For reference
Note on usage : Since the BMS3003 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.A1907-5/5
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