MCR72 D

MCR72-3, MCR72-6,
MCR72-8
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
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SCRs
8 AMPERES RMS
100 thru 600 VOLTS
Features
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability
• Small, Rugged Thermowatt Construction for Low Thermal
•
•
G
A
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
These are Pb−Free Devices*
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave,
50 Hz to 60 Hz)
MCR72−3
MCR72−6
MCR72−8
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 83°C)
IT(RMS)
8.0
A
ITSM
100
A
I2 t
40
A2s
Forward Peak Gate Voltage
(t ≤ 10 ms, TC = 83°C)
VGM
"5.0
V
Forward Peak Gate Current
(t ≤ 10 ms, TC = 83°C)
IGM
1.0
A
Forward Peak Gate Power
(t ≤ 10 ms, TC = 83°C)
PGM
5.0
W
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
Average Gate Power (t = 8.3 ms, TC = 83°C)
Value
Unit
V
100
400
600
1
2
TO−220AB
CASE 221A−07
STYLE 3
3
TO−220AB
CASE 221A−09
STYLE 3
1
2
PG(AV)
0.75
W
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
1
Cathode
−
8.0
in. lb.
2
Anode
3
Gate
4
Anode
Mounting Torque
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1
3
PIN ASSIGNMENT
MARKING AND ORDERING INFORMATION
See detailed marking, ordering, and shipping information in
the package dimensions section on page 4 of this data sheet.
Publication Order Number:
MCR72/D
MCR72−3, MCR72−6, MCR72−8
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
2.2
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
500
mA
mA
ICCH
4
4
mA
mA
Peak Forward On-State Voltage
(ITM = 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
VTM
−
1.7
2.0
V
Gate Trigger Current (Continuous dc) (Note 3)
(VD = 12 V, RL = 100 W)
IGT
−
30
200
mA
Gate Trigger Voltage (Continuous dc) (Note 3)
(VD = 12 V, RL = 100 W)
VGT
−
0.5
1.5
V
Gate Non−Trigger Voltage
(VD = 12 Vdc, RL = 100 W, TJ = 110°C)
VGD
0.1
−
−
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, RGK = 1 kW)
IH
−
−
6.0
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)
tgt
−
1.0
−
ms
dv/dt
−
10
−
V/ms
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
(VAK = Rated VDRM or VRRM; RGK = 1 kW)
IDRM, IRRM
TJ = 25°C
TJ = 110°C
High Logic Level Supply Current from VCC
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, RGK = 1 kW, TJ = 110°C, Exponential Waveform)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Ratings apply for negative gate voltage or RGK = 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3. RGK current not included in measurement.
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2
MCR72−3, MCR72−6, MCR72−8
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
P,
AV AVERAGE POWER DISSIPATION (WATTS)
Anode −
°
T C , MAXIMUM CASE TEMPERATURE (C)
110
100
α
α = Conduction Angle
α = 30°
90
60°
90°
180°
80
dc
70
0
2.0
4.0
16
dc
12
α
α = Conduction Angle
8.0
90°
α = 30° 60°
4.0
0
8.0
6.0
180°
0
2.0
4.0
6.0
8.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
VGT , GATE TRIGGER VOLTAGE (VOLTS)
NORMALIZED GATE CURRENT
3.0
2.0
VD = 12 Vdc
1.0
0.5
0.3
-40
-20
0
20
40
60
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
120
140
0.7
0.6
VD = 12 Vdc
0.5
0.4
0.3
0.2
0.1
-60
Figure 3. Normalized Gate Current
-40
-20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Gate Voltage
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3
120
MCR72−3, MCR72−6, MCR72−8
MARKING DIAGRAMS
TO−220AB
CASE 221A−07
TO−220AB
CASE 221A−09
AY WW
MCR72−xG
AKA
AY WW
MCR72−6TG
AKA
A
Y
WW
MCR72−x
G
AKA
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x = 3, 6, 8, or 8T
= Pb−Free Package
= Diode Polarity
A
Y
WW
MCR72−6T
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MCR72−3G
TO−220AB
(Pb−Free)
500 Units / Box
MCR72−6G
TO−220AB
(Pb−Free)
500 Units / Box
MCR72−6TG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR72−8G
TO−220AB
(Pb−Free)
500 Units / Box
MCR72−8TG
TO−220AB
(Pb−Free)
50 Units / Rail
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4
MCR72−3, MCR72−6, MCR72−8
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 3:
PIN 1.
2.
3.
4.
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5
CATHODE
ANODE
GATE
ANODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MCR72−3, MCR72−6, MCR72−8
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and the
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MCR72/D