BAV99WT1 D

BAV99W, BAV99RW
Dual Series Switching
Diodes
The BAV99WT1G is a smaller package, equivalent to the
BAV99LT1G.
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Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SC−70
CASE 419
ANODE
1
Suggested Applications
•
•
•
•
•
ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
CATHODE
2
3
CATHODE/ANODE
BAV99WT1
SC−70, CASE 419, STYLE 9
CATHODE
1
ANODE
2
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM
Peak Forward Surge Current
3
CATHODE/ANODE
BAV99RWT1
SC−70, CASE 419, STYLE 10
MARKING DIAGRAM
X7 MG
G
1
A7
F7
M
G
= BAV99W
= BAV99RW
= Date Code
= Pb−Free Package
A
ORDERING INFORMATION
2.0
1.0
0.5
Package
Shipping†
BAV99WT1G
SC−70
(Pb−Free)
3,000 / Tape & Reel
SBAV99WT1G
SC−70
(Pb−Free)
3,000 / Tape & Reel
BAV99RWT1G
SC−70
(Pb−Free)
3,000 / Tape & Reel
SBAV99RWT1G
SC−70
(Pb−Free)
3,000 / Tape & Reel
NSVBAV99WT3G
SC−70
10,000 / Tape & Reel
(Pb−Free)
Device
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 9
1
Publication Order Number:
BAV99WT1/D
BAV99W, BAV99RW
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
200
1.6
mW
mW/°C
RqJA
625
°C/W
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−65 to +150
°C
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Symbol
Characteristic
Min
Max
100
−
−
−
−
1.0
30
50
−
1.5
−
−
−
−
715
855
1000
1250
−
6.0
−
1.75
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W
trr
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
Vdc
mAdc
pF
mVdc
ns
VFR
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
820 W
+10 V
2k
100 mH
0.1 mF
IF
tr
tp
0.1 mF
t
IF
trr
10%
t
DUT
50 W OUTPUT
PULSE
GENERATOR
90%
50 W INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
BAV99W, BAV99RW
CURVES APPLICABLE TO EACH DIODE
1000
10
I R, REVERSE CURRENT (A)
μ
100
10
TA = 150°C TA = 25°C
1.0
TA = -55°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.1
0.0
0.2
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
0.001
1.2
10
0
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
0.68
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
www.onsemi.com
3
8
50
BAV99W, BAV99RW
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
c
A2
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
L
A1
MIN
0.80
0.00
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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4
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAV99WT1/D
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