BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Packages are Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic 3 CATHODE/ANODE BAV99WT1 SC−70 CASE 419, STYLE 9 CATHODE 1 MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM Non−Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current CATHODE 2 ANODE 2 3 CATHODE/ANODE BAV99RWT1 SC−70 CASE 419, STYLE 10 MARKING DIAGRAM 450 mA 3 A 2.0 1.0 0.5 SC−70 CASE 419 1 x7....D 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. A7 = BAV99WT1 F7 = BAV99RWT1 D = Date Code ORDERING INFORMATION Package Shipping† SC−70 3000/Tape & Reel BAV99WT1G SC−70 (Pb−Free) 3000/Tape & Reel BAV99RWT1 SC−70 3000/Tape & Reel SC−70 (Pb−Free) 3000/Tape & Reel Device BAV99WT1 BAV99RWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 4 1 Publication Order Number: BAV99WT1/D BAV99WT1, BAV99RWT1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 200 1.6 mW mW/°C RJA 625 °C/W PD 300 2.4 mW mW/°C RJA 417 °C/W TJ, Tstg −65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Symbol Min Max Unit V(BR) 70 − Vdc Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR − − − 2.5 30 50 Adc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 1.5 pF Forward Voltage VF − − − − 715 855 1000 1250 mVdc trr − 6.0 ns VFR − 1.75 V trr t Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 A) (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 +10 V 2k 100 H 0.1 F tr IF 0.1 F tp t IF 10% DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: (a) A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: (c) tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) BAV99WT1, BAV99RWT1 CURVES APPLICABLE TO EACH DIODE 100 10 I R, REVERSE CURRENT (A) µ 10 TA = 85°C TA = 25°C 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = −40°C TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0.001 1.2 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAV99WT1, BAV99RWT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S B S 1 2 D G 0.05 (0.002) J N C MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE K H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE−CATHODE SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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