MAC12SM, MAC12SN Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. www.onsemi.com Features TRIACS 12 AMPERES RMS 600 thru 800 VOLTS • Sensitive Gate Allows Triggering by Microcontrollers and other • • • • • • • • • • Logic Circuits Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 70°C High Surge Current Capability − 90 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Maximum Values of IGT, VGT and IH Specified for Ease of Design High Commutating di/dt − 8.0 A/ms Minimum at 110°C Immunity to dV/dt − 15 V/msec Minimum at 110°C Operational in Three Quadrants: Q1, Q2, and Q3 These Devices are Pb−Free and are RoHS Compliant* MT2 MT1 G MARKING DIAGRAM MAC12SxG AYWW MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12SM MAC12SN VDRM, VRRM On-State RMS Current (All Conduction Angles; TC = 70°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) ITSM 90 A I2t 33 A2sec PGM 16 W PG(AV) 0.35 W Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width = 1.0 msec, TC = 70°C) Average Gate Power (t = 8.3 msec, TC = 70°C) TO−220 CASE 221A STYLE 4 Unit V 1 2 3 600 800 Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. x A Y WW G = M, or N = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping MAC12SMG TO−220 (Pb−Free) 50 Units / Rail MAC12SNG TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 4 1 Publication Order Number: MAC12SM/D MAC12SM, MAC12SN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.2 62.5 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 0.01 2.0 − − 1.85 − − − 1.5 2.5 2.7 5.0 5.0 5.0 − 2.5 10 − − − 3.0 5.0 3.0 15 20 15 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 (di/dt)c 8.0 10 − A/ms Critical Rate of Rise of Off-State Voltage (VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C) dV/dt 15 40 − V/ms Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz di/dt − − 10 A/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = 110°C mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 17 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH Latching Current (VD = 12 V, IG = 5 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V mA mA mA VGT V DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Voltage Current Characteristic of Triacs (Bidirectional Device) Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH + Current VTM Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM off state IH Holding Current Quadrant 3 MainTerminal 2 − www.onsemi.com 2 VTM + Voltage IDRM at VDRM MAC12SM, MAC12SN Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 0.90 VGT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) 100 Q2 10 Q3 Q1 1 0.1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Q1 0.85 0.80 Q3 0.75 0.70 Q2 0.65 0.60 0.55 0.50 0.45 0.40 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature www.onsemi.com 3 95 110 MAC12SM, MAC12SN 100 IH, HOLDING CURRENT (mA) IL , LATCHING CURRENT (mA) 100 Q1 10 Q2 Q3 1 0.1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 10 MT2 Positive 1 MT2 Negative 0.1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 4. Typical Holding Current versus Junction Temperature P(AV), AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Latching Current versus Junction Temperature TC , CASE TEMPERATURE (°C) 110 100 30°, 60° 90 90° 80 180° 70 DC 60 0 10 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2 12 25 DC 20 180° 120° 90° 15 60° 10 30° 5 0 0 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Typical @ TJ = 25°C Maximum @ TJ = 110°C Maximum @ TJ = 25°C 10 1 4 10 2 6 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 12 Figure 6. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Typical RMS Current Derating 100 95 110 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0.5 1.5 2.5 3.5 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics www.onsemi.com 4 10000 MAC12SM, MAC12SN PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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