BTB12 600TW3 D

BTB12-600TW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
•
•
•
•
•
•
•
•
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Blocking Voltage to 600 V
On-State Current Rating of 12 A RMS at 80°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 10 V/s minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt − 1.75 A/ms minimum at 110°C
These are Pb−Free Devices
TRIACS
12 AMPERES RMS
600 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB12−600TW3G
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS)
12
A
ITSM
126
A
I2t
66
A2sec
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 110°C, t = 20 s)
IGM
4.0
A
Peak Gate Power
(Pulse Width ≤ 1.0 s, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 110°C)
PG(AV)
1.0
W
1
Main Terminal 1
Operating Junction Temperature Range
TJ
−40 to +110
°C
2
Main Terminal 2
Storage Temperature Range
Tstg
−40 to +150
°C
3
Gate
4
Main Terminal 2
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 10ms)
Value
Unit
V
600
1
2
3
A
Y
WW
G
BTB12−6TWG
AYWW
TO−220AB
CASE 221A
STYLE 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
Package
Shipping
BTB12−600TW3G
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 0
1
Publication Order Number:
BTB12−600TW3/D
BTB12−600TW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
Value
Unit
RJC
RJA
1.8
60
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol
Min
Typ
Max
−
−
−
−
0.005
1.0
−
−
1.55
1.2
1.2
1.2
−
−
−
5.0
5.0
5.0
−
−
10
−
−
−
−
−
−
15
15
15
0.5
0.5
0.5
−
−
−
1.3
1.3
1.3
0.2
0.2
0.2
−
−
−
−
−
−
(dI/dt)c
1.75
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 110°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dI/dt
−
−
45
A/s
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt
10
−
−
V/s
Characteristic
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM/
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 17 A Peak)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 )
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
IH
Latching Current (VD = 12 V, IG = 7.5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (VD = 12 V, RL = 30 )
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
Gate Non−Trigger Voltage (TJ = 110°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
V
mA
mA
mA
V
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 110°C, No Snubber)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
BTB12−600TW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2 −
IH
off state
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
P(AV), AVERAGE POWER DISSIPATION (WATTS)
BTB12−600TW3G
TC, CASE TEMPERATURE (°C)
125
120°, 90°, 60°, 30°
110
95
180°
80
DC
65
0
2
4
6
8
10
IT(RMS), RMS ON‐STATE CURRENT (AMP)
20
DC
18
180°
16
120°
14
12
10
8
90°
60°
6
30°
4
2
0
12
0
Figure 1. Typical RMS Current Derating
10
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1 · 104
1000
Figure 4. Thermal Response
12
1
0.1
IH, HOLD CURRENT (mA)
IT, INSTANTANEOUS ON−STATE CURRENT (A)
TYPICAL AT
TJ = 25°C
12
Figure 2. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
100
2
4
6
8
10
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
0
0.5
1.0
1.5
2.0
2.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
3.0
11
10
9
8
7
6
5
4
3
2
1
MT2 Positive
MT2 Negative
0
−40 −25 −10
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Hold Current Variation
Figure 3. On-State Characteristics
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4
110
BTB12−600TW3G
2
VD = 12 V
RL = 30 VGT, GATE TRIGGER VOLTAGE (V)
IGT, GATE TRIGGER VOLTAGE (mA)
100
Q3
10
Q1
Q2
1
−40 −25 −10
5
20
35
50
65
80
95
VD = 12 V
RL = 30 1.8
1.6
1.4
1.2
Q1
1
Q3
0.8
0.6
Q2
0.4
0.2
0
−40 −25 −10
110
TJ, JUNCTION TEMPERATURE (°C)
Q2
10
Q3
1
−40 −25 −10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Latching Current Variation
CHARGE
35
50
65
80
95
VD = 600 Vpk
TJ = 110°C
4K
3K
2K
1K
0
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 9. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON‐POLAR
CL
110
5000
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER CONTROL
IL, LATCHING VOLTAGE (mA)
VD = 12 V
RL = 30 Q1
20
Figure 7. Typical Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/μ s)
Figure 6. Typical Gate Trigger Current Variation
100
5
TJ, JUNCTION TEMPERATURE (°C)
+
200 V
MT2
1N914 51 MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
BTB12−600TW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
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BTB12−600TW3/D
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