2KBPxxM-E4, 3N25x-E4 Datasheet

2KBPxxM-E4, 3N25x-E4
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
−
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
~
+
~
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
−
+
Case Style KBPM
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
PRIMARY CHARACTERISTICS
Package
KBPM
IF(AV)
2.0 A
VRRM
50 V to 1000 V
IFSM
60 A
IR
5 μA
VF at IF = 3.14 A
1.1 V
TJ max.
165 °C
Diode variations
In-line
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated
J-STD-002 and JESD22-B102
leads,
solderable
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
3N253
3N254
3N255
3N256
3N257
3N258
3N259
UNIT
Maximum repetitive peak reverse
voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward output
rectified current at TA = 55 °C
IF(AV)
2.0
A
Peak forward surge current single half
sine-wave superimposed on rated
load
IFSM
60
A
I2t
15
A2s
TJ, TSTG
-55 to +165
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous
forward voltage drop per
diode
VF
Maximum DC reverse
current at rated DC
blocking voltage per diode
IR
Typical junction
capacitance per diode
TJ
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
TEST
UNIT
CONDITIONS
3N253
3N254
3N255
3N256
3N257
3N258
3N259
3.14 A
1.1
TA = 25 °C
5.0
TA = 125 °C
500
4.0 V, 
1 MHz
25
V
μA
pF
Revision: 05-Aug-15
Document Number: 88532
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2KBPxxM-E4, 3N25x-E4
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
2KBP005M
2KBP01M
2KBP02M
2KBP04M
2KBP06M
2KBP08M
2KBP10M
3N253
3N254
3N255
3N256
3N257
3N258
3N259
RJA (1)
30
RJL (1)
11
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
2KBP06M-E4/51
1.895
51
600
Anti-static PVC tray
3N257-E4/51
1.895
51
600
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
60 Hz Resistive or
Inductive Load
1.5
PCB Mounted
with 0.47 x 0.47"
(12 x 12 mm)
Copper Pads
1.0
Capacitive Load
0.5
I(pk)
= 5.0
10
I(AV)
(Per Leg) 20
Instantaneous Forward Current (A)
Average Forward Output Current (A)
2.0
0
20
40
60
100
80
120
140
10
1
0.01
160 170
0
Ambient Temperature (°C)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 1 - Derating Curve Output Rectified Current
60
100
TJ = 150 °C
Single Sine-Wave
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
50
40
30
20
10
1.0 Cycle
0
TJ = 125 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent
Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 05-Aug-15
Document Number: 88532
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2KBPxxM-E4, 3N25x-E4
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
100
10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.125 x 45°
(3.2)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
0.60
(15.2)
MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.50 (12.7) MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Revision: 05-Aug-15
Document Number: 88532
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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