SUD50N03-10P Siliconix N-Ch 30-V (D-S), 175C, MOSFET PWM Optimized New Product 30 0.010 @ VGS = 10 V 50A 0.015 @ VGS = 4.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10P S N-Channel MOSFET Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C) TC = 25C TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction)A TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range ID V 50A 40 IDM 180 IS 50 A 65C PD TJ, Tstg 5B –55 to 175 W C Maximum Junction-to-AmbientB RthJA 30 Maximum Junction-to-Case RthJC 2.3 C/W Notes: A. Package limited. B. Surface mounted on FR4 Board, t 10 sec. C. See SOA curve for voltage derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70822. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors 1 SUD50N03-10P Siliconix V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 24 V, VGS = 0 V, TJ = 125C 50 On-State Drain CurrentB ID(on) Drain-Source Breakdown Voltage Gate Threshold Voltage V 2 "100 VDS = 24 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V rDS(on) Forward gfs A 0.0075 0.010 VGS = 10 V, ID = 15 A, TJ = 125C 0.016 VGS = 10 V, ID = 15 A, TJ = 175C 0.019 VGS = 4.5 V, ID = 15 A TransconductanceB VDS = 15 V, ID = 15 A mA A 150 50 VGS = 10 V, ID = 25 A B D i S Drain-Source On-State O S Resistance R i nA 0.011 20 W 0.015 40 S Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 360 Total Gate ChargeC Qg 45 Gate-Source ChargeC Qgs Gate-Drain ChargeC Qgd Turn-On Delay TimeC td(on) Rise TimeC Turn-Off Delay TimeC Fall TimeC 2700 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz VDS = 15 V, V VGS = 10 V, V ID = 50 A 70 nC C 8.5 9.5 12 20 tr VDD = 15 V,, RL = 0.3 W 7 15 td(off) ID ] 50 A, VGEN = 10 V, RG = 2.5 W 35 60 12 20 tf Continuous Current pF F 680 ns IS 50 Pulsed Current ISM 180 Forward VoltageB VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 40 80 ns Reverse Recovery Time A Notes: A. Guaranteed by design, not subject to production testing. B. Pulse test; pulse width v 300 ms, duty cycle v 2%. C. Independent of operating temperature. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors 2 SUD50N03-10P Siliconix Typical Characteristics (25C Unless Otherwise Noted) 100 180 VGS = 10 thru 7 V 6V 80 I D – Drain Current (A) I D – Drain Current (A) 150 120 5V 90 60 4V 30 60 40 TC = 125C 20 25C 3V –55C 0 0 0 2 4 6 8 0 10 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) 80 0.030 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 25C 60 125C 40 20 0 0.025 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0 0 10 20 30 40 50 0 20 40 ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 3000 C – Capacitance (pF) 100 40 50 10 Ciss 2000 Coss 1000 80 ID – Drain Current (A) 4000 60 Crss 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) 30 0 10 20 30 Qg – Total Gate Charge (nC) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors 3 SUD50N03-10P Siliconix Typical Characteristics (25C Unless Otherwise Noted) 2.4 OnĆResistance vs. Junction Temperature VGS = 10 V ID = 50 A I S – Source Current (A) 2.0 r DS(on) – On-Resistance (W) (Normalized) SourceĆDrain Diode Forward Voltage 100 1.6 1.2 0.8 TJ = 150C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 60 50 I D – Drain Current (A) I D – Drain Current (A) 10 ms 40 30 20 100 Limited by rDS(on) 100 ms 1 ms 10 TC = 25C Single Pulse 10 10 ms 100 ms dc 0 1 0 25 50 75 100 125 150 175 0.1 Normalized Effective Transient Thermal Impedance 10 100 Normalized Thermal Transient Impedance, JunctionĆtoĆCase 2 1 1 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 30C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors 4 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. 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