SUD45P03-15 Siliconix P-Channel 30-V (D-S), 150C MOSFET Product Summary rDS(on) () ID (A)a 0.015 @ VGS = –10 V 13 0.024 @ VGS = –4.5 V 8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 20 TA = 25C Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) TC = 25C Maximum Power Dissipationb V 13 ID TA = 100C Unit 8 IDM 100 IS –13 A 70 PD TA = 25C Operating Junction and Storage Temperature Range W 4a TJ, Tstg C –55 to 150 Thermal Resistance Ratings Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb RthJA 30 Maximum Junction-to-Case RthJC 1.8 Unit C/W Notes a. Calculated Rating for TA = 25C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-51 SUD45P03-15 Siliconix Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = –250 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductance b rDS(on) gfs V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 125C –50 VDS = –5 V, VGS = –10 V –50 VDS = –5 V, VGS = –4.5 V –20 mA A VGS = –10 V, ID = –13 A 0.012 0.015 VGS = –10 V, ID = –13 A, TJ = 125C 0.018 0.026 VGS = –4.5 V, ID = –13 A 0.020 0.024 VDS = –15 V, ID = –13 A nA 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg 50 Gate-Source Chargec 3200 VGS = 0 V, VDS = –25 V, F = 1 MHz VDS = –15 V, VGS = –10 V, ID = –45 A Qgs Qgd 6.2 Turn-On Delay Timec td(on) 13 Rise tr Turn-Off Delay Timec Fall Timec td(off) VDD = –15 V, RL = 0.33 W ID ^ –45 A, VGEN = –10 V, RG = 2.4 W tf 125 nC 14 Gate-Drain Chargec Timec pF 800 20 10 20 50 100 20 40 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current Diode Forward ISM Voltageb Source-Drain Reverse Recovery Time 100 VSD IF = –45 A, VGS = 0 V 1.0 1.5 V trr IF = –45 A, di/dt = 100 A/ms 55 100 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-52 A SUD45P03-15 Siliconix Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 6V 7V VGS = 10, 9, 8 V TC = –55C I D – Drain Current (A) I D – Drain Current (A) Transfer Characteristics 5V 4V 25C 125C 3V 2V VDS – Drain-to-Source Voltage (V) g fs – Transconductance (S) rDS(on) – On-Resistance ( ) 25C 125C VGS = 10 V VGS – Gate-to-Source Voltage (V) C – Capacitance (pF) Coss Gate Charge Crss ID – Drain Current (A) Ciss VGS = 4.5 V Capacitance ID – Drain Current (A) On-Resistance vs. Drain Current TC = –55C VGS – Gate-to-Source Voltage (V) Transconductance VDS – Drain-to-Source Voltage (V) VDS = 15 V ID = 45 A Qg – Total Gate Charge (nC) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-53 SUD45P03-15 Siliconix Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature VGS = 10 V ID = 45 A I S – Source Current (A) rDS(on) – On-Resistance ( W ) (Normalized) Source-Drain Diode Forward Voltage 100 TJ = 150C TJ = 25C 10 1 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 500 100 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1 dc 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1s 0.1 TA – Ambient Temperature (C) 1 100 ms TA = 25C Single Pulse Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-54 30 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. 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