Si1865DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) 1.8 to 8 RDS(on) (Ω) ID (A) 0.215 at VIN = 4.5 V ± 1.2 0.300 at VIN = 2.5 V ± 1.0 0.440 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1865DL includes a p- and p-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1865DL operates on supply lines from 1.8 V to 8 V, and can drive loads up to 1.2 A. • Halogen-free According to IEC 61249-2-21 Definition • 215 mΩ Low RDS(on) TrenchFET® • 1.8 V to 8 V Input • 1.5 V to 8 V Logic Level Control • Low Profile, Small Footprint SC70-6 Package • 2000 V ESD Protection On Input Switch, VON/OFF • Adjustable Slew-Rate • 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC APPLICATION CIRCUITS 20 2, 3 4 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 16 tr VOUT VIN Q2 R1 Time (µs) C1 6 6 12 tf 8 td(off) 5 ON/OFF Co LOAD Q1 td(on) 0 Ci 0 1 GND R2 4 6 8 10 Note: For R2 switching variations with other VIN/R1 combinations see Typical Characteristics Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ Si1865DL COMPONENTS Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control 2 R2 (kΩ) R2 R1 R2 C1 4 Typical 10 kΩ to 1 mΩ* Typical 0 kΩ to 100 kΩ* Typical 1000 pF The Si1865DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift devices saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. * Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on. Document Number: 71297 S10-1054-Rev. D, 03-May-10 www.vishay.com 1 Si1865DL Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1865DL SC70-6 4 Top View D2 D2 1 6 2 5 3 4 R1, C1 ON/OFF VA XX D2 Q2 YY R2 2, 3 S2 Marking Code 6 Lot Traceability and Date Code R1, C1 Part # Code Q1 5 S2 ON/OFF 1 Ordering Information: Si1865DL-T1-E3 (Lead (Pb)-free) Si1865DL-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit VIN 8 VON/OFF 8 Input Voltage ON/OFF Voltage Continuousa, b Load Current Pulsed V ± 1.2 IL b, c Unit ±3 A Continuous Intrinsic Diode Conductiona IS Maximum Power Dissipationa PD 0.4 W TJ, Tstg - 55 to 150 °C ESD 2 kV Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω) - 0.4 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (continuous current)a RthJA 260 320 Maximum Junction-to-Foot (Q2) RthJC 180 220 Unit °C/W SPECIFICATIONS TJ = 25 °C unless otherwise noted Parameter Symbol Test Conditions Reverse Leakage Current VIN VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage IQ lS = - 0.4 A Min. Typ. Max. Unit 1 µA 0.85 1.1 V 8 V VON/OFF = 1.5 , VIN = 4.5 V, ID = 1.2 A 0.180 0.215 VON/OFF = 1.5 , VIN = 2.5 V, ID = 1.0 A 0.250 0.300 VON/OFF = 1.5 , VIN = 1.8 V, ID = 0.7 A 0.367 0.440 OFF Characteristics ON Characteristics Input Volatge On-Resistance (P-Channel) at 1 A On-State (P-Channel) Drain-Current 1.8 VIN RDS(on) ID(on) VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 A 1 VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 A 1 Ω A Notes: a) Surface mounted on FR4 board. b) VIN = 8 V, VON/OFF = 8 V, TA = 25 °C. c) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71297 S10-1054-Rev. D, 03-May-10 Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.8 VON/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 0.8 V DROP (V) V DROP (V) 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0.2 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 IL (A) 1.5 2.0 2.5 IL (A) VDROP vs. IL at VIN = 4.5 V VDROP vs. IL at VIN = 2.5 V 1.0 0.8 VON/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 0.8 VDROP (V) V DROP (V) 0.6 0.6 TJ = 125 °C TJ = 25 °C 0.4 0.4 TJ = 125 °C 0.2 0.2 TJ = 25 °C 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1 2 IL (A) 5 6 VDROP vs. IL at IL = 0.7 V 1.0 0.10 IL = 0.7 A VON/OFF = 1.5 V to 8 V IL = 0.7 A VON/OFF = 1.5 V to 8 V R SS(on) - On-Resistance (Ω) 0.06 V DROP Variance (V) 4 VIN (V) VDROP vs. IL at VIN = 1.8 V VIN = 1.8 V 0.02 VIN = 4.5 V - 0.02 - 0.06 - 0.10 - 50 3 0.8 0.6 0.4 TJ = 125 °C TJ = 25 °C 0.2 0.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VDROP Variance vs. Junction Temperature Document Number: 71297 S10-1054-Rev. D, 03-May-10 0 1 2 3 4 5 6 VIN (V) On-Resistance vs. Input Voltage www.vishay.com 3 Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 1.5 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF IL = 0.7 A VON/OFF = 1.5 V to 8 V 16 1.1 Time (µs) (Normalized) RDS(on) - On-Resistance 1.3 VIN = 1.8 V 0.9 td(off) 12 8 VIN = 4.5 V tr 4 0.7 0.5 - 50 td(on) 0 - 25 0 25 50 75 100 125 150 0 2 4 TJ - Junction Temperature (°C) 6 8 10 R2 (kΩ) Normalized On-Resistance vs. Junction Temperature Switching Variation R2 at VIN = 1.8 V, R1 = 20 kΩ 20 30 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 16 12 tf 8 tr IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 24 tr Time (µs) Time (µs) tf 18 12 td(off) tf 4 6 td(off) td(on) td(on) 0 0 0 2 4 6 8 10 0 2 4 R2 (kΩ) 6 8 R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ Switching Variation R2 at VIN = 1.8 V, R1 = 20 kΩ 150 200 td(off) 160 tf 120 tf Time (µs) Time (µs) td(off) 120 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 80 90 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 60 tr td(on) 30 40 tr td(on) 0 0 www.vishay.com 4 20 40 60 80 0 100 0 20 40 60 80 R2 (kΩ) R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ Switching Variation R2 at VIN = 2.5 V, R1 = 300 kΩ 100 Document Number: 71297 S10-1054-Rev. D, 03-May-10 Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 tf 90 Time (µs) td(off) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 60 td(on) tr 30 0 0 20 40 60 80 R2 (kΩ) Switching Variation R2 at VIN = 1.8 V, R1 = 300 kΩ 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 320 °C 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71297. 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