Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BZX384 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2003 Apr 01
2004 Mar 22
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
FEATURES
PINNING
• Total power dissipation: max. 300 mW
;;
PIN
• Two tolerance series: ±2% and approx. ±5%
1
• Working voltage range: nominal 2.4 to 75 V (E24 range)
2
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
handbook, halfpage
• General regulation functions.
1
DESCRIPTION
Top view
Low-power voltage regulator diodes encapsulated in a
very small SOD323 (SC-76) plastic SMD package.
cathode
anode
2
MAM387
The marking bar indicates the cathode.
The diodes are available in the normalized E24 ±2%
(BZX384-B) and approx. ±5% (BZX384-C) tolerance
range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
2004 Mar 22
DESCRIPTION
Fig.1
2
Simplified outline (SOD323; SC-76) and
symbol.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX384-B2V4 to BZX384-B75
BZX384-B2V4
K1
BZX384-B6V2
L2
BZX384-B16
M3
BZX384-B43
N3
BZX384-B2V7
K2
BZX384-B6V8
L3
BZX384-B18
M4
BZX384-B47
N4
BZX384-B3V0
K3
BZX384-B7V5
L4
BZX384-B20
M5
BZX384-B51
N5
BZX384-B3V3
K4
BZX384-B8V2
L5
BZX384-B22
M6
BZX384-B56
N6
BZX384-B3V6
K5
BZX384-B9V1
L6
BZX384-B24
M7
BZX384-B62
N7
BZX384-B3V9
K6
BZX384-B10
L7
BZX384-B27
M8
BZX384-B68
N8
BZX384-B4V3
K7
BZX384-B11
L8
BZX384-B30
M9
BZX384-B75
N9
BZX384-B4V7
K8
BZX384-B12
L9
BZX384-B33
N0
BZX384-B5V1
K9
BZX384-B13
M1
BZX384-B36
N1
BZX384-B5V6
L1
BZX384-B15
M2
BZX384-B39
N2
Marking codes for BZX384-C2V4 to BZX384-C75
BZX384-C2V4
T3
BZX384-C6V2
T1
BZX384-C16
DE
BZX384-C43
DR
BZX384-C2V7
T4
BZX384-C6V8
D7
BZX384-C18
DF
BZX384-C47
DS
BZX384-C3V0
T5
BZX384-C7V5
D8
BZX384-C20
DG
BZX384-C51
DT
BZX384-C3V3
T6
BZX384-C8V2
D9
BZX384-C22
DH
BZX384-C56
DU
BZX384-C3V6
T7
BZX384-C9V1
D0
BZX384-C24
DJ
BZX384-C62
DV
BZX384-C3V9
T8
BZX384-C10
T2
BZX384-C27
DK
BZX384-C68
DW
BZX384-C4V3
T9
BZX384-C11
DA
BZX384-C30
DL
BZX384-C75
DX
BZX384-C4V7
T0
BZX384-C12
DB
BZX384-C33
DM
BZX384-C5V1
D5
BZX384-C13
DC
BZX384-C36
DN
BZX384-C5V6
D6
BZX384-C15
DD
BZX384-C39
DP
ORDERING INFORMATION
TYPE
NUMBER
BZX384-B2V4
to
BZX384-B75
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
BZX384-C2V4
to
BZX384-C75
2004 Mar 22
3
VERSION
SOD323
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
250
UNIT
IF
continuous forward current
mA
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
see Tables 1 and 2
A
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
−
40
W
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Note
1. Refer to SOD323 standard mounting conditions.
CHARACTERISTICS
Total BZX384-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
2004 Mar 22
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.3
0.9
V
IF = 100 mA; see Fig.3
1.1
V
BZX384-B/C2V4
VR = 1 V
50
μA
BZX384-B/C2V7
VR = 1 V
20
μA
BZX384-B/C3V0
VR = 1 V
10
μA
BZX384-B/C3V3
VR = 1 V
5
μA
BZX384-B/C3V6
VR = 1 V
5
μA
BZX384-B/C3V9
VR = 1 V
3
μA
BZX384-B/C4V3
VR = 1 V
3
μA
BZX384-B/C4V7
VR = 2 V
3
μA
BZX384-B/C5V1
VR = 2 V
2
μA
BZX384-B/C5V6
VR = 2 V
1
μA
BZX384-B/C6V2
VR = 4 V
3
μA
BZX384-B/C6V8
VR = 4 V
2
μA
BZX384-B/C7V5
VR = 5 V
1
μA
BZX384-B/C8V2
VR = 5 V
700
nA
BZX384-B/C9V1
VR = 6 V
500
nA
BZX384-B/C10
VR = 7 V
200
nA
BZX384-B/C11
VR = 8 V
100
nA
BZX384-B/C12
VR = 8 V
100
nA
BZX384-B/C13
VR = 8 V
100
nA
BZX384-B/C15 to 75
VR = 0.7VZnom
50
nA
reverse current;
4
DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
MIN.
MIN.
TYP.
MAX.
MAX.
MAX.
at IZtest = 5 mA
TYP.
MAX.
TEMPERATURE
COEFFICIENT SZ (mV/K)
at IZtest = 5 mA
(see Figs 4 and 5)
MIN.
TYP.
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
MAX.
MAX.
MAX.
5
2.45
2.2
2.6
275
600
70
100
−3.5
−1.6
0
450
6.0
2V7
2.65
2.75
2.5
2.9
300
600
75
100
−3.5
−2.0
0
450
6.0
3V0
2.94
3.06
2.8
3.2
325
600
80
95
−3.5
−2.1
0
450
6.0
3V3
3.23
3.37
3.1
3.5
350
600
85
95
−3.5
−2.4
0
450
6.0
3V6
3.53
3.67
3.4
3.8
375
600
85
90
−3.5
−2.4
0
450
6.0
3V9
3.82
3.98
3.7
4.1
400
600
85
90
−3.5
−2.5
0
450
6.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
−3.5
−2.5
0
450
6.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
−3.5
−1.4
0.2
300
6.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
−2.7
−0.8
1.2
300
6.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
−2.0
1.2
2.5
300
6.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80
10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80
11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80
12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.70
13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.70
15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.70
16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.60
18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.60
20.40
18.8
21.2
60
225
15
55
14.4
16.4
18.0
60
1.5
22
21.60
22.40
20.8
23.3
60
250
20
55
16.4
18.4
20.0
60
1.25
24
23.50
24.50
22.8
25.6
60
250
25
70
18.4
20.4
22.0
55
1.25
Product data sheet
2.35
BZX384 series
2V4
NXP Semiconductors
BZXBxxx
Cxxx
WORKING VOLTAGE VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
2004 Mar 22
Table 1 Per type BZX384-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMPERATURE
COEFFICIENT SZ (mV/K)
at IZtest = 2 mA
(see Figs 4 and 5)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
MAX.
MAX.
6
Tol. ±2% (B)
Tol. ±5% (C)
MIN.
MAX.
MIN.
27
26.50
27.50
25.1
28.9
65
300
25
80
21.4
23.4
25.3
50
1.0
30
29.40
30.60
28.0
32.0
70
300
30
80
24.4
26.6
29.4
50
1.0
33
32.30
33.70
31.0
35.0
75
325
35
80
27.4
29.7
33.4
45
0.9
36
35.30
36.70
34.0
38.0
80
350
35
90
30.4
33.0
37.4
45
0.8
39
38.20
39.80
37.0
41.0
80
350
40
130
33.4
36.4
41.2
45
0.7
43
42.10
43.90
40.0
46.0
85
375
45
150
37.6
41.2
46.6
40
0.6
47
46.10
47.90
44.0
50.0
85
375
50
170
42.0
46.1
51.8
40
0.5
51
50.00
52.00
48.0
54.0
90
400
60
180
46.6
51.0
57.2
40
0.4
56
54.90
57.10
52.0
60.0
100
425
70
200
52.2
57.0
63.8
40
0.3
62
60.80
63.20
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
66.60
69.40
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
73.50
76.50
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
MAX.
at IZtest = 0.5 mA
TYP.
MAX.
at IZtest = 2 mA
TYP.
MAX.
MIN.
TYP.
MAX.
NXP Semiconductors
BZXBxxx
Cxxx
WORKING VOLTAGE VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
2004 Mar 22
Table 2 Per type BZX384-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
Product data sheet
BZX384 series
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction
to ambient
note 1
415
K/W
Rth(j-s)
thermal resistance from junction
to soldering point
note 2
110
K/W
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Soldering point of the cathode tab.
2004 Mar 22
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
GRAPHICAL DATA
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
0.8
1
VF (V)
Forward current as a function of forward
voltage; typical values.
MBG782
MBG783
10
0
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
0
20
40
IZ (mA)
−5
60
0
4
BZX384-B/C2V4 to B/C4V3.
Tj = 25 to 150 °C.
BZX384-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
Fig.4
Fig.5
Temperature coefficient as a function of
working current; typical values.
2004 Mar 22
8
8
12
16
IZ (mA)
20
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Mar 22
REFERENCES
IEC
JEDEC
JEITA
SC-76
9
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 22
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R76/02/pp11
Date of release: 2004 Mar 22
Document order number: 9397 750 12616
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