Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BZX585 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2004 Mar 26
2004 Jun 22
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
FEATURES
PINNING
• Total power dissipation: max. 300 mW
PIN
• Two tolerance series: ± 2 % and ± 5 %
1
• Working voltage range: nominal 2.4 V to 75 V
(E24 range)
2
• Non-repetitive peak reverse power dissipation: max.
40 W.
APPLICATIONS
handbook, halfpage
• General regulation functions.
DESCRIPTION
;
;
cathode
anode
1
2
Top view
DESCRIPTION
Low-power voltage regulator diodes encapsulated in an
ultra small SOD523 plastic SMD package.
The diodes are available in the normalized E24 ± 2 %
(BZX585-B) and ± 5 % (BZX585-C) tolerance range.
MAM387
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
The series consists of 37 types with nominal working
voltages from 2.4 V to 75 V.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
EA
BZX585-B43
EM
Marking codes for BZX585-B2V4 to BZX585-B75
BZX585-B2V4
C1
BZX585-B6V2
E1
BZX585-B16
BZX585-B2V7
C2
BZX585-B6V8
E2
BZX585-B18
EB
BZX585-B47
EN
BZX585-B3V0
C3
BZX585-B7V5
E3
BZX585-B20
EC
BZX585-B51
EP
BZX585-B3V3
C4
BZX585-B8V2
E4
BZX585-B22
ED
BZX585-B56
ER
BZX585-B3V6
C5
BZX585-B9V1
E5
BZX585-B24
EE
BZX585-B62
ES
BZX585-B3V9
C6
BZX585-B10
E6
BZX585-B27
EF
BZX585-B68
ET
BZX585-B4V3
C7
BZX585-B11
E7
BZX585-B30
EG
BZX585-B75
EU
BZX585-B4V7
C8
BZX585-B12
E8
BZX585-B33
EH
BZX585-B5V1
C9
BZX585-B13
E9
BZX585-B36
EK
BZX585-B5V6
C0
BZX585-B15
E0
BZX585-B39
EL
2004 Jun 22
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
BZX585 series
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-C2V4 to BZX585-C75
BZX585-C2V4
F1
BZX585-C6V2
H1
BZX585-C16
HA
BZX585-C43
HM
BZX585-C2V7
F2
BZX585-C6V8
H2
BZX585-C18
HB
BZX585-C47
HN
BZX585-C3V0
F3
BZX585-C7V5
H3
BZX585-C20
HC
BZX585-C51
HP
BZX585-C3V3
F4
BZX585-C8V2
H4
BZX585-C22
HD
BZX585-C56
HR
BZX585-C3V6
F5
BZX585-C9V1
H5
BZX585-C24
HE
BZX585-C62
HS
BZX585-C3V9
F6
BZX585-C10
H6
BZX585-C27
HF
BZX585-C68
HT
BZX585-C4V3
F7
BZX585-C11
H7
BZX585-C30
HG
BZX585-C75
HU
BZX585-C4V7
F8
BZX585-C12
H8
BZX585-C33
HH
BZX585-C5V1
F9
BZX585-C13
H9
BZX585-C36
HK
BZX585-C5V6
F0
BZX585-C15
H0
BZX585-C39
HL
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BZX585-B2V4
to
BZX585-B75
−
Plastic surface mounted package; 2 leads
SOD523
BZX585-C2V4
to
BZX585-C75
−
Plastic surface mounted package; 2 leads
SOD523
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
200
UNIT
IF
continuous forward current
IZSM
non-repetitive peak reverse
current
tp = 100 μs; square wave;
Tamb = 25 °C prior to surge
see Tables 1 and 2
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 μs; square wave;
Tamb = 25 °C prior to surge
−
40
W
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2004 Jun 22
3
mA
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
2004 Jun 22
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
IF = 100 mA; see Fig.2
1.1
V
BZX585-B/C2V4
VR = 1 V
50
μA
BZX585-B/C2V7
VR = 1 V
20
μA
BZX585-B/C3V0
VR = 1 V
10
μA
BZX585-B/C3V3
VR = 1 V
5
μA
BZX585-B/C3V6
VR = 1 V
5
μA
BZX585-B/C3V9
VR = 1 V
3
μA
BZX585-B/C4V3
VR = 1 V
3
μA
BZX585-B/C4V7
VR = 2 V
3
μA
BZX585-B/C5V1
VR = 2 V
2
μA
BZX585-B/C5V6
VR = 2 V
1
μA
BZX585-B/C6V2
VR = 4 V
3
μA
BZX585-B/C6V8
VR = 4 V
2
μA
BZX585-B/C7V5
VR = 5 V
1
μA
BZX585-B/C8V2
VR = 5 V
700
nA
BZX585-B/C9V1
VR = 6 V
500
nA
BZX585-B/C10
VR = 7 V
200
nA
BZX585-B/C11
VR = 8 V
100
nA
BZX585-B/C12
VR = 8 V
100
nA
BZX585-B/C13
VR = 8 V
100
nA
BZX585-B/C15 to 75
VR = 0.7VZnom
50
nA
4
BZX585B or C
Tol. ± 2% (B)
XXX
DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ± 5% (C)
at IZtest = 1 mA
at IZtest = 5 mA
MIN.
TYP.
TYP.
MAX.
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see figs 3 AND 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs
TYP.
MAX.
MAX.
5
MAX.
2V4
2.35
2.45
2.28
2.52
275
400
70
100
−1.3
450
6.0
2V7
2.65
2.75
2.57
2.84
300
450
75
100
−1.4
440
6.0
3V0
2.94
3.06
2.85
3.15
325
500
80
95
−1.6
425
6.0
3V3
3.23
3.37
3.14
3.47
350
500
85
95
−1.8
410
6.0
3V6
3.53
3.67
3.42
3.78
375
500
85
90
−1.9
390
6.0
3V9
3.82
3.98
3.71
4.10
400
500
85
90
−1.9
370
6.0
4V3
4.21
4.39
4.09
4.52
410
600
80
90
−1.7
350
6.0
4V7
4.61
4.79
4.47
4.94
425
500
50
80
−1.2
325
6.0
5V1
5.00
5.20
4.85
5.36
400
480
40
60
−0.5
300
6.0
5V6
5.49
5.71
5.32
5.88
80
400
15
40
1.0
275
6.0
6V2
6.08
6.32
5.89
6.51
40
150
6
10
2.2
250
6.0
6V8
6.66
6.94
6.46
7.14
30
80
6
15
3.0
215
6.0
7V5
7.35
7.65
7.13
7.88
15
80
2
10
3.6
170
4.0
8V2
8.04
8.36
7.79
8.61
20
80
2
10
4.3
150
4.0
9V1
8.92
9.28
8.65
9.56
20
100
2
10
5.2
120
3.0
10
9.80
10.20
9.50
10.50
20
150
2
10
6.0
110
3.0
11
10.78 11.22
10.45
11.55
25
150
2
10
6.9
110
2.5
12
11.76 12.24
11.40
12.60
25
150
2
10
7.9
105
2.5
13
12.74 13.26
12.35
13.65
25
170
2
10
8.8
105
2.5
15
14.70 15.30
14.25
15.75
25
200
3
15
10.7
100
2.0
16
15.68 16.32
15.20
16.80
50
200
10
40
12.4
90
1.5
18
17.64 18.36
17.10
18.90
50
225
10
45
14.4
80
1.5
20
19.60 20.40
19.00
21.00
60
225
15
55
16.4
70
1.5
22
21.56 22.44
20.90
23.10
60
250
20
55
18.4
60
1.25
24
23.52 24.48
22.80
25.20
60
250
25
70
20.4
55
1.25
Product data sheet
MAX.
BZX585 series
MIN.
NXP Semiconductors
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
2004 Jun 22
Table 1 Per type BZX585-B/C2V4 to B/C24
Tamb = 25 °C unless otherwise specified.
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A) at tp = 100 μs
TYP.
MAX.
MAX.
6
Tol. ± 2 % (B)
Tol. ± 5 % (C) at IZtest = 0.5 mA
at IZtest = 2 mA
MIN.
MAX.
MIN.
MAX.
TYP.
27
26.46
27.54
25.65
28.35
65
300
25
80
23.4
50
1.0
30
29.40
30.60
28.50
31.50
70
300
30
80
26.6
50
1.0
33
32.34
33.66
31.35
34.65
75
325
35
80
29.7
45
0.9
36
35.28
36.72
34.20
37.80
80
350
35
90
33.0
45
0.8
39
38.22
39.78
37.05
40.95
80
350
40
130
36.4
45
0.7
43
42.14
43.86
40.85
45.15
85
375
45
150
41.2
40
0.6
47
46.06
47.94
44.65
49.35
85
375
50
170
46.1
40
0.5
51
49.98
52.02
48.45
53.55
90
400
60
180
51.0
40
0.4
56
54.88
57.12
53.20
58.80
100
425
70
200
57.0
40
0.3
62
60.76
63.24
58.90
65.10
120
450
80
215
64.4
35
0.3
68
66.64
69.36
64.60
71.40
150
475
90
240
71.7
35
0.25
75
73.50
76.50
71.25
78.75
170
500
95
255
80.2
35
0.2
TYP.
MAX.
MAX.
NXP Semiconductors
BZX585B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
2004 Jun 22
Table 2 Per type BZX585-B/C27 to B/C75
Tamb = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
350
K/W
Rth(j-s)
thermal resistance from junction to solder point
note 2
65
K/W
Notes
2. Solder point at cathode tab.
Product data sheet
BZX585 series
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
GRAPHICAL DATA
MBG781
MLD444
300
0.5
handbook, halfpage
handbook, halfpage
SZ
(mV/K)
IF
(mA)
4V7
0
4V3
200
−0.5
2V4
2V7
3V9
−1
100
3V6
−1.5
0
0.6
0.8
−2
10−1
1
VF (V)
3V3
3V0
1
Tamb = 25 °C.
BZX585-B/C2V4 to B/C4V7.
Tamb = 25 °C to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLD445
12
handbook, halfpage
15
SZ
(mV/K)
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
8
4
0
−4
10−1
1
10
IZ (mA)
102
BZX585-B/C5V1 to B/C15.
Tamb = 25 °C to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2004 Jun 22
7
10
IZ (mA)
102
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
2004 Jun 22
REFERENCES
IEC
JEDEC
JEITA
SC-79
8
EUROPEAN
PROJECTION
ISSUE DATE
02-12-13
06-03-16
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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otherwise agreed to in writing by NXP Semiconductors. In
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jun 22
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp10
Date of release: 2004 Jun 22
Document order number: 9397 750 13303
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