SUD50NP04-94 Vishay Siliconix New Product Complementary N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = 10 V 8 0.045 at VGS = 4.5 V 8 0.053 at VGS = - 10 V -8 0.072 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 8 COMPLIANT APPLICATIONS 9 • CCFL Inverter - LCD TV and Monitor TO-252-4L D-PAK D D Top View Drain Connected to Tab G1 G2 S1 S1 G1 S2 G2 S2 N-Channel MOSFET Ordering Information: SUD50NP04-94-T4-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS ± 12 ± 16 TC = 25 °C 8 -8 TC = 70 °C 8 -8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID 8 TA = 70 °C Source-Drain Current Diode Current TC = 25 °C TA = 25 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH 8 -8 4.9b, c 35 - 5b, c - 35 IAS 13 16 EAS 8.5 13 13.2 15.6 8.5 10 IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 6.1b, c 3.8b, c 3.9b, c TJ, Tstg A mJ b, c 5.9 TA = 70 °C Operating Junction and Storage Temperature Range - 6.3b, c - 35 7.1 35 ISM Pulsed Source-Drain Current V - 8b, c b, c IDM Pulsed Drain Current (10 µs Pulse Width) b, c Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Symbol N-Channel Typ P-Channel Max Typ Max t ≤ 10 sec RthJA 17.5 21 16.8 20.5 Steady State RthJC 7.8 9.4 6.6 8 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 58 °C/W (N-Channel) and 53 °C/W (P-Channel). Document Number: 74410 S-62077-Rev. A, 23-Oct-06 www.vishay.com 1 SUD50NP04-94 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch 40 ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch - 3.8 V ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.6 1.7 VDS = VGS, ID = - 250 µA P-Ch - 0.8 - 2.2 VDS = 0 V, VGS = ± 12 V N-Ch 100 VDS = 0 V, VGS = ± 16 V P-Ch - 100 VDS = 40 V, VGS = 0 V N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 3.4 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 nA µA - 10 A VGS = 10 V, ID = 5.2 A N-Ch 0.034 0.041 VGS = - 10 V, ID = - 4.5 A P-Ch 0.044 0.053 VGS = 4.5 V, ID = 4.9 A N-Ch 0.037 0.045 VGS = - 4.5 V, ID = - 3.9 A P-Ch 0.059 0.072 VDS = 15 V, ID = 5.2 A N-Ch 13 VDS = - 15 V, ID = - 4.5 A P-Ch 18 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Crss Qg N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz Rg 700 P-Ch 805 N-Ch 76 P-Ch 120 N-Ch 45 P-Ch 85 pF VDS = 20 V, VGS = 10 V, ID = 5.2 A N-Ch 18 27 VDS = - 20 V, VGS = - 10 V, ID = - 4.5 A P-Ch 18.5 28 N-Ch 8 12 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5.2 A P-Ch 9 14 N-Ch 1.5 P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 4.5 A P-Ch 2 N-Ch 2.4 P-Ch 3.6 Qgs Qgd N-Ch f = 1 MHz N-Ch 1.9 3 P-Ch 11.5 18 nC Ω Document Number: 74410 S-62077-Rev. A, 23-Oct-06 SUD50NP04-94 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamic Symbol Test Conditions Min Typa Max Unit a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 6 12 P-Ch 6 12 N-Ch 20 30 P-Ch 22 35 N-Ch 20 30 P-Ch 34 55 N-Ch 8 13 P-Ch 46 70 N-Ch 10 15 40 P-Ch 30 N-Ch 60 90 P-Ch 91 137 N-Ch 30 45 P-Ch 30 45 N-Ch 64 96 P-Ch 47 72 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage ISM VSD N-Ch 8 P-Ch -8 N-Ch 35 P-Ch - 35 IS = 1.7 A N-Ch 0.75 1.2 IS = - 1.7 A P-Ch - 0.79 - 1.2 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.7 A, di/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 1.7 A, di/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 25 40 P-Ch 27 45 N-Ch 17 26 P-Ch 17 26 N-Ch 14 P-Ch 13 N-Ch 11 P-Ch 14 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74410 S-62077-Rev. A, 23-Oct-06 www.vishay.com 3 SUD50NP04-94 Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 20 2.5 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 3 V 16 12 8 2V 2.0 1.5 1.0 TC = 125 °C 4 0.5 25 °C - 55 °C 0 0 1 2 3 4 0.0 0.0 5 0.6 VDS - Drain-to-Source Voltage (V) 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.042 1200 0.040 1000 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 1.2 VGS = 4.5 V 0.038 0.036 VGS = 10 V 800 Ciss 600 400 0.034 200 0.032 Crss Coss 0 0 4 8 12 16 20 0 8 ID - Drain Current (A) 24 32 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 5.2 A ID = 5.2 A 1.6 8 VDS = 10 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 6 VDS = 20 V 4 2 1.4 1.2 1.0 0.8 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74410 S-62077-Rev. A, 23-Oct-06 SUD50NP04-94 Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.20 rDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.1 0 0.3 0.6 0.9 1.2 ID = 5.2 A 0.16 0.12 0.08 TC = 125 °C 0.04 TC = 25 °C 0.00 1.5 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 0.4 ID = 250 µA 40 Power (W) VGS(th) (V) 0.2 0.0 30 - 0.2 20 - 0.4 10 - 0.6 - 50 0 - 25 0 25 50 75 100 125 0.001 150 0.01 0.1 1 10 100 Time (sec) TJ - Temperature ( C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 50 *Limited by rDS(on) 40 I D - Drain Current (A) Power (W) 10 30 20 100 µs 1 ms 1 10 ms 100 ms 10 s 0.1 10 DC TA = 25 °C Single Pulse 0 0.001 0.01 0.01 0.1 1 Time (sec) Single Pulse Power, Junction-to-Case 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74410 S-62077-Rev. A, 23-Oct-06 www.vishay.com 5 SUD50NP04-94 Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 100 6 *Limited by rDS(on) 5 100 µs 1 ms 10 ms 100 ms DC 1 0.1 ID - Drain Current (A) I D - Drain Current (A) 10 4 3 2 1 TC = 25 °C Single Pulse 0 0.01 0.01 0.1 1 10 0 100 25 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified 100 125 150 Current Derating, Junction-to-Ambient 15 3.0 12 2.4 Power Dissipation (W) Power Dissipation (W) 75 TC - Case Temperature (°C) Safe Operating Area, Junction-to-Case Limited by Package 9 50 6 3 1.8 1.2 0.6 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating, Junction-to-Case Power Derating, Junction-to-Ambient 150 16.0 Power Dissipation (W) 12.8 9.6 6.4 3.2 *The power dissipation PD is based on TJ(max) = 150 °C, using junc- 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case www.vishay.com 6 150 tion-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74410 S-62077-Rev. A, 23-Oct-06 SUD50NP04-94 Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 58 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74410 S-62077-Rev. A, 23-Oct-06 www.vishay.com 7 SUD50NP04-94 Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2.5 20 2.0 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 4 V 16 12 3V 8 1.5 1.0 TC = 125 °C 4 0.5 0 0.0 0.0 25 °C - 55 °C 0 1 2 3 4 5 0.8 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.070 1240 0.064 992 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 1.6 VGS = 4.5 V 0.058 0.052 Ciss 744 496 VGS = 10 V 0.046 248 Coss 0.040 0 4 8 12 16 20 0 8 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 40 1.8 10 1.6 8 rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) Crss 0 6 4 2 1.4 1.2 1.0 0.8 0 0 www.vishay.com 8 5 10 15 20 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 74410 S-62077-Rev. A, 23-Oct-06 SUD50NP04-94 Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.30 rDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 ID = 4.5 A 0.24 0.18 0.12 TA = 125 °C 0.06 TA = 25 °C 0.00 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.6 50 ID = 250 µA 40 Power (W) VGS(th) (V) 0.4 0.2 0.0 - 0.2 - 0.4 - 50 30 20 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 Time (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 50 *Limited by rDS(on) 10 I D - Drain Current (A) Power (W) 40 30 20 100 µs 10 ms 100 ms 10 s 0.1 10 0 0.001 1 ms 1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 1 Time (sec) Single Pulse Power, Junction-to-Case Document Number: 74410 S-62077-Rev. A, 23-Oct-06 10 0.0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 9 SUD50NP04-94 Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 100 6 *Limited by rDS(on) 4 100 µs 1 ms 1 10 ms 100 ms 1s 0.1 ID - Drain Current (A) I D - Drain Current (A) 10 3 2 1 TC = 25 °C Single Pulse 0.01 0 0.0 0.1 *VGS 1 10 0 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified 75 100 125 150 Current Derating, Junction-to-Ambient 15 3.0 12 2.4 Power Dissipation (W) I D - Drain Current (A) 50 TC - Case Temperature (°C) Safe Operating Area, Junction-to-Case Limited by Package 9 25 6 3 1.8 1.2 0.6 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating, Junction-to-Case Power Derating, Junction-to-Ambient 150 20 Power Dissipation (W) 16 12 8 4 *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case www.vishay.com 10 150 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74410 S-62077-Rev. A, 23-Oct-06 SUD50NP04-94 Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 53 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74410. Document Number: 74410 S-62077-Rev. A, 23-Oct-06 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1