SK1020D1

SK1020D1 ... SK10100D1
SK1020D1 ... SK10100D1
Surface Mount Schottky Rectifiers – Single Diode
Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode
Version 2012-04-10
2.3
Nominal Current
Nennstrom
±0.2
6.6
5.3±0.2
0.5
7.0±0.2
4
6.0
3
2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case
Kunststoffgehäuse
TO-252AA
D-PAK
1.0
2.7
1
1
±0.2
Type
Typ
10 A
Weight approx.
Gewicht ca.
2.3
1
0.32g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2/4
3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Grenz- und Kennwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 10 A
SK1020D1
20
20
< 0.51
< 0.55
SK1030D1
30
30
< 0.51
< 0.55
SK1040D1
40
40
< 0.51
< 0.55
SK1045D1
45
45
< 0.51
< 0.55
SK1050D1
50
50
< 0.62
< 0.70
SK1060D1
60
60
< 0.62
< 0.70
SK1080D1
80
80
< 0.71
< 0.83
SK10100D1
100
100
< 0.71
< 0.83
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
10 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 2)
SK1020...
SK1060D1
TA = 25°C
IFSM
135/150 A
SK1080...
SK10100D1
TA = 25°C
IFSM
115/125 A
TA = 25°C
i2t
80 A2s
Tj
TS
-50...+150°C
-50...+175°C
Peak forward surge current
50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
2
Tj = 25°C
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
SK1020D1 ... SK10100D1
Characteristics
Kennwerte
Leakage current
Sperrstrom
SK1020D1...
SK1045D1
Tj = 25°C
Tj = 100°C
VR = VRRM
IR
< 300 µA
< 45 mA
Leakage current
Sperrstrom
SK1050D1...
Tj = 25°C
SK10100D1 Tj = 100°C
VR = VRRM
IR
< 200 µA
< 25 mA
RthC
< 2.5 K/W
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
102
120
[%]
SK1020D1...SK1045D1
[A]
100
SK1050D1, SK1060D1
10
80
1
60
40
10-1
20
IFAV
0
10
-2
0
TC
50
100
150
[°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
2
SK1080D1, SK10100D1
IF
http://www.diotec.com/
0
0.4
0.6
1.0
VF
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
© Diotec Semiconductor AG