Dual Comp Transistor 30V 6 A

NJX1675PDR2G
Complementary 30 V, 6.0 A,
Transistor
These devices are designed for use in low voltage, high speed
switching applications where affordable efficient energy control is
important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster.
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
http://onsemi.com
30 VOLTS, 6.0 AMPS
COMPLEMENTARY
TRANSISTOR
EQUIVALENT RDS(on) 80 mΩ
Compliant
COLLECTOR
7,8
COLLECTOR
5,6
MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
NPN
PNP
VCEO
30
--30
Vdc
Collector-Base Voltage
NPN
PNP
VCBO
30
--30
Vdc
Emitter-Base Voltage
NPN
PNP
VEBO
6.0
--7.0
Vdc
Collector Current -- Continuous
NPN
PNP
IC
3.0
--3.0
A
Collector Current -- Peak
NPN
PNP
ICM
6.0
--6.0
A
ESD
HBM Class 3B
MM Class C
Electrostatic Discharge
2
BASE
4
BASE
1
EMITTER
3
EMITTER
8
1
SOIC--8
CASE 751
STYLE 16
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DEVICE MARKING
8
XXXXXX
AYWWG
G
1
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NJX1675PDR2G
Package
Shipping†
SOIC--8
(Pb--Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 0
1
Publication Order Number:
NJX1675P/D
NJX1675PDR2G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25C
Derate above 25C
Thermal Resistance, Junction--to--Ambient (Note 1)
Junction and Storage Temperature Range
Symbol
Max
Unit
PD
2.0
W
16
mW/C
RθJA
62
C/W
TJ, Tstg
--55 to +150
C
1. FR-- 4 @ 100 mm2, 1 oz. copper traces, still air, t  10 sec.
2. Dual heated values assume total power is the sum of two equally powered devices.
NPN ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
--
--
30
--
--
6.0
--
--
--
--
0.1
--
--
0.1
100
100
180
180
400
350
340
320
-----
-----
0.008
0.044
0.080
0.082
0.011
0.060
0.115
0.115
--
0.780
0.900
--
0.650
0.750
100
--
--
Unit
OFF CHARACTERISTICS
Collector -- Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector -- Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter -- Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
Collector -- Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base -- Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.01 A)
VBE(sat)
Base -- Emitter Turn--on Voltage (Note 4)
(IC = 0.1 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
--
320
450
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
--
40
--
pF
SWITCHING CHARACTERISTICS
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
--
--
100
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
--
--
100
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
--
--
780
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
--
--
110
ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle  2%.
http://onsemi.com
2
NJX1675PDR2G
PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
--30
--
--
--30
--
--
--7.0
--
--
--
--
--0.1
--
--
--0.1
100
100
180
150
380
340
300
230
-----
-----
--0.013
--0.075
--0.130
--0.135
--0.017
--0.095
--0.170
--0.170
--
--0.780
--0.900
--
--0.660
--0.750
100
120
--
Unit
OFF CHARACTERISTICS
Collector -- Emitter Breakdown Voltage
(IC = --10 mAdc, IB = 0)
V(BR)CEO
Collector -- Base Breakdown Voltage
(IC = --0.1 mAdc, IE = 0)
V(BR)CBO
Emitter -- Base Breakdown Voltage
(IE = --1.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = --30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = --5.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = --10 mA, VCE = --2.0 V)
(IC = --500 mA, VCE = --2.0 V)
(IC = --1.0 A, VCE = --2.0 V)
(IC = --2.0 A, VCE = --2.0 V)
hFE
Collector -- Emitter Saturation Voltage (Note 4)
(IC = --0.1 A, IB = --0.010 A)
(IC = --1.0 A, IB = --0.100 A)
(IC = --1.0 A, IB = --0.010 A)
(IC = --2.0 A, IB = --0.200 A)
VCE(sat)
Base -- Emitter Saturation Voltage (Note 4)
(IC = --1.0 A, IB = --0.01 A)
VBE(sat)
Base -- Emitter Turn--on Voltage (Note 4)
(IC = --0.1 A, VCE = --2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = --100 mA, VCE = --5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = --0.5 V, f = 1.0 MHz)
Cibo
--
250
300
pF
Output Capacitance (VCB = --3.0 V, f = 1.0 MHz)
Cobo
--
50
--
pF
Delay (VCC = --30 V, IC = --750 mA, IB1 = --15 mA)
td
--
--
60
ns
Rise (VCC = --30 V, IC = --750 mA, IB1 = --15 mA)
tr
--
--
120
ns
Storage (VCC = --30 V, IC = --750 mA, IB1 = --15 mA)
ts
--
--
400
ns
Fall (VCC = --30 V, IC = --750 mA, IB1 = --15 mA)
tf
--
--
130
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle  2%.
http://onsemi.com
3
NJX1675PDR2G
NPN TYPICAL CHARACTERISTICS
0.14
25C
0.12
0.10
--55C
0.08
0.06
0.04
0.02
0
0.001
0.01
0.1
1
10
VBE(sat), BASE--EMITTER
SATURATION VOLTAGE (V)
25C (2.0 V)
--55C (5.0 V)
0.001
0.01
0.1
1
0.01
0.1
1
10
IC/IB = 10
0.9
--55C
0.8
0.7
25C
0.6
0.5
150C
0.4
0.3
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
VCE = +2.0 V
0.7
VCE(sat), COLLECTOR--EMITTER
VOLTAGE (V)
VBE(on), BASE--EMITTER TURN--ON
VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
0.8
--55C
25C
0.6
0.5
150C
0.4
0.3
0.2
0
0.2
10
1.0
0.9
--55C
0.05
1.0
200 --55C (2.0 V)
100
25C
0.10
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
25C (5.0 V)
300
0.15
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
600 150C (2.0 V)
400
150C
0.20
IC, COLLECTOR CURRENT (A)
150C (5.0 V)
500
IC/IB = 100
0.25
IC, COLLECTOR CURRENT (A)
700
hFE, DC CURRENT GAIN
0.30
150C
IC/IB = 10
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
0.16
0.001
0.01
0.1
1
10
0.9
100 mA
0.8
1A
3A
2A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Ib, BASE CURRENT (A)
Figure 5. Base Emitter Turn--On Voltage vs.
Collector Current
Figure 6. Saturation Region
http://onsemi.com
4
0.1
NJX1675PDR2G
NPN TYPICAL CHARACTERISTICS
Cobo, OUTPUT CAPACITANCE (pF)
80
350
325
300
275
250
Cibo (pF)
225
200
175
150
0
1
2
3
4
5
70
60
50
40
20
10
6
Cobo (pF)
30
0
5
10
15
20
25
30
VEB, EMITTER--BASE VOLTAGE (V)
Vcb, COLLECTOR--BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1 ms
1s
10 ms
100 ms
1.0
IC (A)
Cibo, INPUT CAPACITANCE (pF)
400
375
0.1
Thermal Limit
0.01
0.001
Single Pulse Test at TA = 25C
0.01
0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
http://onsemi.com
5
100
35
40
NJX1675PDR2G
PNP TYPICAL CHARACTERISTICS
150C
0.20
--55C
0.15
25C
0.10
0.05
0
0.001
0.01
0.1
1
10
300 --55C (5.0 V)
200 --55C (2.0 V)
100
0
0.001
0.01
0.1
1
0
0.001
0.01
0.1
1
10
IC/IB = 10
1.0
0.9
--55C
0.8
25C
0.7
0.6
150C
0.5
0.4
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain vs. Collector
Current
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
2.0
VCE = --2.0 V
0.7
VCE(sat), COLLECTOR--EMITTER
VOLTAGE (V)
VBE(on), BASE--EMITTER TURN--ON
VOLTAGE (V)
0.05
IC, COLLECTOR CURRENT (A)
0.8
--55C
25C
0.6
0.5
150C
0.4
0.3
0.2
0.10
0.3
10
1.0
0.9
0.15
1.1
25C (2.0 V)
400
0.20
150C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
25C (5.0 V)
500
25C
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
150C (2.0 V)
600
--55C
IC, COLLECTOR CURRENT (A)
150C (5.0 V)
700
IC/IB = 100
0.25
IC, COLLECTOR CURRENT (A)
800
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 10
VBE(sat), BASE--EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
0.25
0.001
0.01
0.1
1
10
1.8
100 mA
1.6
1A
3A
2A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Ib, BASE CURRENT (A)
Figure 14. Base Emitter Turn--On Voltage vs.
Collector Current
Figure 15. Saturation Region
http://onsemi.com
6
0.1
NJX1675PDR2G
PNP TYPICAL CHARACTERISTICS
Cobo, OUTPUT CAPACITANCE (pF)
100
300
250
200
Cibo (pF)
150
100
0
1
2
3
4
5
90
80
70
60
50
Cobo (pF)
40
30
6
0
5
10
15
20
25
30
VEB, EMITTER BASE VOLTAGE (V)
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 16. Input Capacitance
Figure 17. Output Capacitance
10
1 ms
1s
10 ms
100 ms
1.0
IC (A)
Cibo, INPUT CAPACITANCE (pF)
350
0.1
Thermal Limit
0.01
0.001
Single Pulse Test at TA = 25C
0.01
0.1
1.0
10
VCE (Vdc)
Figure 18. Safe Operating Area
http://onsemi.com
7
100
35
40
NJX1675PDR2G
PACKAGE DIMENSIONS
SOIC--8 NB
CASE 751--07
ISSUE AJ
--X--
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751--01 THRU 751--06 ARE OBSOLETE. NEW
STANDARD IS 751--07.
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
--Y--
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
--Z--
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada
Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800--282--9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81--3--5773--3850
http://onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NJX1675P/D
Similar pages