DG506B, DG507B Vishay Siliconix Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG506B and DG507B are high performance analog multiplexers. Their ultra-low switch charge injection, low channel capacitance, and low leakage level allows them to achieve superior switching performance. The DG506B is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address (A0, A1, A2, A3). The DG507B is a dual 8-channel differential analog multiplexer designed to connect one of eight differential inputs to a common dual output as determined by its 3-bit binary address (A0, A1, A2). Break-before-make switching action protects against momentary crosstalk between adjacent channels. • Operate with single or dual power supply An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. All control inputs, addresses (Ax) and enable (EN) are TTL compatible over the full specified operating temperature range. • Superior alternative to: - ADG506A, DG506A, HI-506 - ADG507A, DG507A, HI-507 • V+ to V- analog signal swing range • 44 V power supply maximum rating • Extended operate temperature range: -40 °C to +125 °C • Low leakage typically < 3 pA • Low charge injection - QINJ = 1 pC • Low power - ISUPPLY: 5 µA • TTL compatible logic • > 250 mA latch up current per JESD78 • Available in SOIC28 and TSSOP28 packages • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS The DG506B and DG507B are fabricated on an enhanced SG-II CMOS process that achieves improved performance on: reduced charge injection, lower device leakage, and minimized parasitic capacitance. • Reduced switching errors As the DG506, DG507 has a long history in the industry with many suppliers offering copies, and in some cases improved variations, with the best in class improvements, the Vishay Siliconix new version of the DG506B, DG507B are the superior alternatives to what is currently available. • Reduced power consumption Applications for the DG506B, DG507B include high speed and high precision data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. • Reduced glitching • Improved data throughput • Increased ruggedness • Wide supply ranges (± 5 V to ± 20 V) APPLICATIONS • Data acquisition systems • Audio and video signal routing • ATE systems • Medical instrumentation The DG506B and DG507B have the absolute maximum voltage rating extended to 44 V. Additionally, single supply operation is also allowed. An epitaxial layer prevents latch-up. The DG506B and DG507B are both available in 28-lead SOIC and TSSOP package options with extended temperature range of -40 °C to +125 °C. For more information, refer to Vishay Siliconix DG506B, DG507B evaluation board note. Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG506B Dual-In-Line SOIC and TSSOP DG507B Dual-In-Line SOIC and TSSOP V+ 1 28 D V+ 1 28 Da NC 2 27 V- Db 2 27 V- NC 3 26 S8 NC 3 26 S8a S16 4 25 S7 S8b 4 25 S7a S15 5 24 S6 S7b 5 24 S6a S14 6 23 S5 S6b 6 23 S5a S13 7 22 S4 S5b 7 22 S4a S12 8 21 S3 S4b 8 21 S3a S11 9 20 S2 S3b 9 20 S2a S10 10 19 S1 S2b 10 19 S1a S9 11 18 EN S1b 11 17 A0 GND 12 NC 13 16 A1 NC 13 16 A1 A3 14 15 A2 NC 14 15 A2 18 EN Da S 8a V+ 28 27 26 Db 1 NC 2 S8 D 3 V- V+ DG507B PLCC NC DG506B PLCC NC Top View S 16 Top View 4 17 A0 Decoders/Drivers 4 3 2 1 28 27 26 V- Decoders/Drivers S 8b GND 12 25 S7 S7b 5 25 S7a 6 24 S6 S6b 6 24 S6a S13 7 23 S5 S5b 7 23 S5a S12 8 22 S4 S4b 8 22 S4a S11 9 21 S3 S3b 9 21 S3a S10 10 20 S2 S2b 10 20 S2a S1 S1b 11 19 S1a 11 19 Top V iew www.vishay.com 2 EN A0 A1 A2 NC NC GND EN 12 13 14 15 16 17 18 A0 12 13 14 15 16 17 18 A1 Decoders/Drivers A2 Decoders/Drivers GND S9 5 A3 S14 NC S15 Top V iew For technical questions, contact: [email protected] Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TRUTH TABLE DG506B TRUTH TABLE DG507B A3 A2 A1 A0 EN On Switch A2 A1 A0 EN On Switch X X X X 0 None X X X 0 None 1 0 0 0 1 1 2 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 0 0 0 0 0 0 0 1 1 1 0 0 1 0 1 3 0 0 1 1 1 4 0 1 0 0 1 5 0 1 0 1 1 6 1 1 0 1 7 0 1 1 0 1 7 1 1 1 1 8 1 1 1 1 1 8 1 0 0 0 1 9 1 0 0 1 1 10 1 0 1 0 1 11 1 0 1 1 1 12 1 1 0 0 1 13 1 1 0 1 1 14 1 1 1 0 1 15 1 1 1 1 1 16 ORDERING INFORMATION DG506B Temp. Range -40 °C to 125 °C Package Part Number 28-Pin SOIC DG506BEW-T1-GE3 28-Pin TSSOP DG506BEQ-T1-GE3 28-Pin PLCC DG506BEN-T1-GE3 Logic “0” = VIL 0.8 V Logic “1” = VIH 2.4 V X = Do not care ORDERING INFORMATION DG507B Temp. Range -40 °C to 125 °C Package Part Number 28-Pin SOIC DG507BEW-T1-GE3 28-Pin TSSOP DG507BEQ-T1-GE3 28-Pin PLCC DG507BEN-T1-GE3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Voltages Referenced to V- V+ GND 25 (V-) - 2 to (V+) + 2 or 20 mA, whichever occurs first Digital Inputsa, VS, VD Current (Any terminal) 30 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature (EW, EQ, EN suffix) 28-Pin Wide Body SOICc Power Dissipation (Packages)b Thermal Resistance (J-A )b Unit 44 -65 to 150 V mA °C 840 28-Pin TSSOPd 817 28-Pin PLCCe 1693 28-Pin Wide Body SOICc 95.3 28-Pin TSSOPd 97.9 28-Pin PLCCe 47.3 mW °C/W Notes: a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 10.5 mW/°C above 70 °C. d. Derate 10.2 mW/°C above 70 °C. e. Derate 21.2 mW/°C above 70 °C. Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix SPECIFICATIONS Parameter Symbol Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) Matching Source Off Leakage Current Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V (± 10 %) VAX, VEN = 2.4 V, 0.8 Va RDS(on) VD = ± 10 V, IS = - 1 mA RDS(on) VD = ± 10 V IS(off) ID(off) VD = ± 10 V VS = 10 V VEN = 0 V VS = VD = 10 V sequence each switch on ± ID(on) Typ.c Room DG506B DG506B DG507B Min.d -15 170 Full Room 10 Room 0.005 Full DG507B Drain On Leakage Current Temp.b Full ± Drain Off Leakage Current A Suffix -40 °C to 125 °C Room 0.005 Full Room 0.005 Full Room 0.005 Full Room Max.d Min.d 15 -15 Max.d Unit 15 V 300 300 400 400 -1 1 -1 1 -50 50 -50 50 -1 1 -1 1 -100 100 -100 100 -1 1 -1 1 -50 50 -50 50 -1 1 -1 1 -100 100 -100 100 -1 1 -1 1 Full -50 50 -50 50 2.4 Digital Control Logic High Input Voltage VINH Full Logic Low Input Voltage VINL Full 0.005 D Suffix -40 °C to 85 °C 2.4 0.8 0.8 Logic High Input Current IIH VAX, VEN = 2.4 V Full -1 1 -1 1 Logic Low Input Current IIL VAX, VEN = 0.8 V Full -1 1 -1 1 Logic Input Capacitancee Cin f = 1 MHz Room 5 Room 190 tTRANS VS1 = +10 V/-10 V, VS16 = -10 V/+10 V, RL = 1 M, CL = 35 pF see figure 2 VS1 = VS16 = 5.0 V, CL = 35 pF, RL = 1 k, see figure 4 Room nA V µA pF Dynamic Characteristics Transition Time Break-Before-Make Interval tOPEN Enable Turn-On Time tON(EN) Enable Turn-Off Time Charge Injectione Off Isolatione Crosstalke - 3 dB Bandwidthe Total Harmonic Distortione tOFF(EN) QINJ CL = 1 nF, RGEN = 0 , VGEN = 0 V OIRR CL = 5 pF, RL = 50 f = 1 MHz DG506B XTALK CL = 5 pF, RL = 50 f = 1 MHz DG506B RL = 50 DG506B THD Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Drain On Capacitancee CD(on) 84 Full Room VS1 = 5 V, VS2 to VS16 = 0 V, RL = 1 k, CL = 35 pF see figure 3 BW Full DG507B DG507B DG507B RL = 10 k, 5 Vrms f = 1 MHz Room Room Room 360 360 30 10 10 151 250 53 Full Full 300 30 Full Room 300 ns 250 310 310 200 200 220 220 1 pC - 85 - 84 dB - 85 - 84 114 MHz 217 Room 0.04 Room 3 DG506B Room 31 DG507B Room 17 DG506B Room 38 DG507B Room 24 Room 0.005 % pF Power Supply Positive Supply Current I+ Negative Supply Current I- www.vishay.com 4 VAX, VEN = 0 V or 5 V Full Full -1 For technical questions, contact: [email protected] 0.1 0.1 0.1 0.1 -1 mA µA Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix SPECIFICATIONS Single Supply 12 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V (± 10 %) VAX, VEN = 2.4 V, 0.8 Va A Suffix -40 °C to 125 °C Temp.b Typ.c Min.d D Suffix -40 °C to 85 °C Max.d Min.d 12 0 Max.d Unit 12 V Analog Switch Analog Signal Rangee On-Resistance RDS(on) Matching VANALOG RDS(on) Full Room VD = 10 V/0 V, IS = 1 mA RDS(on) IS(off) Switch Off Leakage Current ID(off) V+ = 12 V, V- = 0 V VD = 0 V/10 V, VS = 10 V/0 V DG506B DG507B DG506B ID(on) Full Room 10 Room 0.005 Full ID(off) Channel On Leakage Current 0 270 V+ = 12 V, V- = 0 V VS = VD = 0 V/10 V DG507B Room 0.005 Full Room 0.005 Full Room 0.005 Full Room 0.005 450 450 650 650 -1 1 -1 1 -50 -50 -50 50 -1 1 -1 1 -100 100 -100 100 -1 1 -1 1 -50 50 -50 50 -1 1 -1 1 -100 100 -100 100 -1 1 -1 1 Full -50 50 -50 50 2.4 nA Digital Control Logic High Input Voltage VINH Full 2.4 Logic Low Input Voltage VINL Full Logic High Input Current IIH VAX, VEN = 2.4 V Full -1 1 -1 1 Logic Low Input Current IIL VAX, VEN = 0.8 V Full -1 1 -1 1 Logic Input Capacitancee Cin f = 1 MHz Room 5 tTRANS VS1 = 10 V/0 V, VS16 = 0 V/10 V, RL = 1 M, CL = 35 pF, see figure 2 Room 228 VS1 = VS16 = 5 V, CL = 35 pF, RL = 1 k, see figure 4 Room 0.8 0.8 V µA pF Dynamic Characteristics Transition Time Break-Before-Make Interval Enable Turn-On Time Enable Turn-Off Time tOPEN tON(EN) tOFF(EN) QINJ Off Isolatione OIRR CL = 5 pF, RL = 50 f = 1 MHz DG506B XTALK CL = 5 pF, RL = 50 f = 1 MHz DG506B - 3 dB Bandwidthe BW RL = 50 Total Harmonic Distortione THD RL = 10 k, 5 VRMS, f = 20 Hz to 20 kHz Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 Full 40 DG507B DG507B DG506B DG507B Full Room Room Room Room 450 40 10 10 197 300 420 420 46 200 200 220 220 Full Room 380 450 115 Full CL = 1 nF, RGEN = 0 , VGEN = 0 V Charge Injectione Crosstalke Full Room VS1 = 5 V, VS2 to VS16 = 0 V, RL = 1 k, CL = 35 pF see figure 3 380 4 300 ns pC -86 -84 -85 dB -84 104 191 0.23 For technical questions, contact: [email protected] MHz % www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix SPECIFICATIONS Single Supply 12 V Parameter Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V (± 10 %) VAX, VEN = 2.4 V, 0.8 Va Symbol A Suffix -40 °C to 125 °C Temp.b Typ.c Min.d Max.d D Suffix -40 °C to 85 °C Min.d Max.d Unit Dynamic Characteristics Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) 4 DG506B f = 1 MHz DG507B 37 Room pF 20 DG506B 43 DG507B 26 Power Supply Power Supply Current I+ Room VAX, VEN = 0 V, or 5 V 0.005 Full 0.1 0.1 0.1 0.1 mA Notes: a. VAX, VEN = input voltage perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. RDS(on) = RDS(on) max. - RDS(on) min. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHEMATIC DIAGRAM Typical Channel V+ VREF GND VD VA0 AX Level Shift Decode/ Drive V+ V- S1 EN Sn V- Figure 1. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 500 500 T = 25 °C IS = 1 mA V+ = + 5.0 V V- = - 5.0 V RON - On-Resistance (Ω) 400 350 V+ = + 15 V V- = - 15 V 300 V+ = + 10.8 V V- = - 10.8 V 250 200 150 V+ = 10.8 V 400 350 V+ = 12 V 300 250 200 V+ = 20 V 150 100 V+ = + 13.5 V V- = - 13.5 V V+ = + 20 V V- = - 20 V 50 0 - 20 100 50 - 15 - 10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. VD and Dual Supply Voltage On-Resistance vs. VD and Single Supply Voltage 700 500 + 125 °C + 85 °C + 25 °C - 40 °C V+ = + 5.0 V, V- = - 5.0 V IS = 1 mA 450 V+ = + 10.8 V, V- = - 10.8 V IS = 1 mA + 125 °C + 85 °C + 25 °C - 40 °C 400 RON - On-Resistance (Ω) 600 RON - On-Resistance (Ω) T = 25 °C IS = 1 mA 450 RON - On-Resistance (Ω) 450 500 400 300 200 350 300 250 200 150 100 100 50 0 -5 -4 -3 -2 -1 0 1 2 3 4 0 - 15 5 - 10 VD - Analog Voltage (V) 10 15 500 V+ = + 13.5 V, V- = - 13.5 V IS = 1 mA + 125 °C + 85 °C + 25 °C - 40 °C 450 350 300 250 200 150 300 250 200 150 100 50 50 -5 0 5 10 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 + 125 °C + 85 °C + 25 °C - 40 °C 350 100 - 10 V+ = + 15 V, V- = - 15 V IS = 1 mA 400 RON - On-Resistance (Ω) 400 RON - On-Resistance (Ω) 5 On-Resistance vs. Analog Voltage and Temperature 500 0 - 15 0 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature 450 -5 15 0 - 15 - 10 -5 0 5 10 15 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 500 700 V+ = + 20 V, V- = - 20 V IS = 1 mA RON - On-Resistance (Ω) 350 550 300 250 200 150 450 400 350 300 250 200 100 50 50 0 - 20 0 - 15 - 10 -5 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 11 12 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 500 700 600 550 500 450 400 350 300 250 200 + 125 °C + 85 °C + 25 °C - 40 °C V+ = + 20 V, V- = 0 V IS = 1 mA 450 400 RON - On-Resistance (Ω) + 125 °C + 85 °C + 25 °C - 40 °C V+ = + 12 V, V- = 0 V IS = 1 mA 650 RON - On-Resistance (Ω) 500 150 100 150 350 300 250 200 150 100 100 50 50 0 0 0 1 2 3 4 5 6 7 8 9 0 10 11 12 2 4 6 8 10 12 14 16 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 10 000 100 1000 80 18 20 V± = ± 15 V T = 25 °C 60 I+ 10 Leakage Current (pA) 100 Supply Current (µA) + 125 °C + 85 °C + 25 °C - 40 °C V+ = + 10.8 V, V- = 0 V IS = 1 mA 600 + 125 °C + 85 °C + 25 °C - 40 °C 400 RON - On-Resistance (Ω) 450 650 IGND 1 0.1 I- 0.01 0.0001 10 100 1K 10K 100K 1M IS(OFF) ID(ON) 20 0 - 20 ID(OFF) - 40 - 60 V+ = + 15 V V- = - 15 V 0.001 40 - 80 10M - 100 - 15 - 10 -5 0 5 10 Input Switching Frequency (Hz) VD - Analog Voltage (V) Supply Current vs. Input Switching Frequency Leakage Current vs. Analog Voltage www.vishay.com 8 For technical questions, contact: [email protected] 15 Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 000 2.50 V+ = + 15 V V- = - 15 V 2.25 Switching Threshold (V) Leakage Currrent (pA) 1000 ID(OFF) 100 ID(ON) 10 IS(OFF) 2.00 1.75 1.50 1.25 1.00 1 0.75 0.1 - 60 - 40 - 20 0.50 0 20 40 60 80 100 120 140 2 6 10 14 18 22 26 30 Temperature (ºC) V+ - Supply Voltage Leakage Current vs. Temperature Switching Threshold vs. Single Supply V 0 0 DG507B DG506B - 10 - 10 Loss Loss - 40 - 20 V+ = + 15 V V- = - 15 V RL = 50 - 50 Loss, OIRR, XTALK (dB) Loss, OIRR, XTALK (dB) - 20 - 30 OIRR - 60 - 70 XTALK (adjacent) - 80 - 90 - 30 - 40 V+ = + 15 V V- = - 15 V RL = 50 - 50 OIRR - 60 - 70 XTALK (adjacent) - 80 - 90 XTALK (non-adjacent) - 100 - 110 100K 1M 10M XTALK (non-adjacent) - 100 100M - 110 100K 1G 1M Frequency (Hz) 10M 100M Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 0 0 DG506B DG507B - 10 - 10 Loss V+ = + 12 V V- = 0 V RL = 50 - 50 OIRR - 60 - 70 XTALK (adjacent) - 80 - 90 - 30 - 40 V+ = + 12 V V- = 0 V RL = 50 - 50 OIRR - 60 - 70 XTALK (adjacent) - 80 - 90 XTALK (non-adjacent) - 100 - 110 100K Loss - 20 Loss, OIRR, XTALK (dB) Loss, OIRR, XTALK (dB) - 20 - 40 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency - 30 34 1M 10M 100M 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 XTALK (non-adjacent) - 100 - 110 100K 1M 10M 100M 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency For technical questions, contact: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 DG506B T = 25 °C DG507B T = 25 °C 10 QINJ - Charge Injection (pC) QINJ - Charge Injection (pC) 10 V+ = + 15 V V- = - 15 V 5 0 V+ = + 12 V V- = 0 V -5 - 10 - 15 - 10 -5 0 5 10 15 0 V+ = + 12 V V- = 0 V -5 - 15 - 20 20 - 15 - 10 -5 0 5 10 15 VS - Analog Voltage (V) VS - Analog Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 20 35 60 DG506B V± = ± 15 V T = 25 °C 55 50 DG507B V± = ± 15 V T = 25 °C 30 45 CD(on)/CS(on) CD(on)/CS(on) 25 40 Capacitance (pF) Capacitance (pF) V+ = + 15 V V- = - 15 V - 10 - 15 - 20 35 30 CD(off) 25 20 20 CD(off) 15 10 15 10 0 - 15 - 10 CS(off) 5 CS(off) 5 -5 0 5 10 0 - 15 15 - 10 -5 0 5 10 VANALOG (V) VANALOG (V) Capacitance vs. VANALOG Capacitance vs. VANALOG 60 15 35 DG506B V+ = + 12 V T = 25 °C 55 50 DG507B V+ = + 12 V T = 25 °C 30 CD(on)/CS(on) CD(on)/CS(on) 45 25 40 35 Capacitance (pF) Capacitance (pF) 5 CD(off) 30 25 20 CD(off) 20 15 10 15 10 CS(off) 5 CS(off) 5 0 0 0 www.vishay.com 10 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 VANALOG (V) VANALOG (V) Capacitance vs. VANALOG Capacitance vs. VANALOG For technical questions, contact: [email protected] 10 11 12 Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 RL = 10 k VSignal = 5 VRMS THD (%) 1 V = + 12 V 0.1 V = ± 15 V 0.01 10 100 1000 10 000 100 000 Frequency (Hz) THD vs. Frequency TEST CIRCUITS + 15 V A3 A2 V+ S1 A1 50 ± 10 V S2 - S7 A0 DG506B S16 EN GND + 3.0 V ± 10 V VO D V- Logic Input 50 % 0V 35 pF 1 M tr < 20 ns tf < 20 ns 3V - 15 V VS1 + 15 V VO A2 A1 A0 50 0V V+ ± 10 V S1b 90 % VS16 S1a - S4a, Da DG507B S8b GND tTRANS tTRANS ± 10 V S1 ON S16 ON VO Db EN + 3.0 V 90 % Switch Output V1 M 35 pF - 15 V Figure 2. Transition Time Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 For technical questions, contact: [email protected] www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TEST CIRCUITS + 15 V V+ S1 5V EN S2 - S16 A0 DG506B A1 A2 A3 50 Ω D V- GND VO Logic Input 50 % 0V 35 pF 1 kΩ tr < 20 ns tf < 20 ns 3V tON(EN) - 15 V VO + 15 V VO S1b 5V 0V EN S1a - S8a, Da S2b - S8b A0 50 Ω 90 % 90 % Switch Output V+ A1 A2 tOFF(EN) DG507B Db VO V- GND 35 pF 1 kΩ - 15 V Figure 3. Enable Switching Time + 15 V V+ EN + 3.0 V Logic Input All S and Da +5V tr < 20 ns tf < 20 ns 3V 50 % 0V A0 DG506B DG507B A1 A2 A3 50 GND Db, D VO VO V- 80 % Switch Output - 15 V 1 k 35 pF VO 0V tOPEN Figure 4. Break-Before-Make Interval www.vishay.com 12 For technical questions, contact: [email protected] Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 This document is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG506B, DG507B Vishay Siliconix TEST CIRCUITS + 15 V Rg V+ SX Logic Input EN OFF ON OFF 0V A0 Channel Select 3V VO D CL 1 nF AX GND ΔVO Switch Output V- ΔVO is the measured voltage due to charge transfer error Q, when the channel turns off. QINJ = CL x ΔVO - 15 V Figure 5. Charge Injection + 15 V + 15 V VIN Rg = 50 Ω VIN VS V+ S1 VS SX VOUT S16 A0 D VOUT AX GND Rg = 50 Ω S16 A0 RL 50 Ω RL 50 Ω V- EN V+ S1 D AX GND 3V EN RL 50 Ω V- - 15 V 3V VOUT Off Isolation = 20 log VIN - 15 V Crosstalk = 20 log VOUT VIN Figure 6. Off Isolation Figure 7. Crosstalk + 15 V + 15 V VS VIN V+ S1 V+ Rg = 50 Ω S1 Meter A0 A0 D AX GND EN V- VO Channel Select AX RL 50 Ω D GND 3V - 15 V Insertion Loss = 20 log VOUT VIN Figure 8. Insertion Loss Impedance Analyzer or Equivalent S8 EN 0V or 3V f = 1 MHz V- 15 V Figure 9. Source Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65150. Document Number: 65150 S13-2567-Rev. C, 16-Dec-13 For technical questions, contact: [email protected] www.vishay.com 13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSSOP: 28ĆLEAD All Corner R0.1 (max) R0.1–0.15 4_"2_ 0.127 Typ. Pin 1 Indicator O0.70x0.038"0.012 DP Surface Polished 0.735 6.400"0.050 4.400"0.025 5_–8_ Typ. R0.1–0.15 0.600"0.050 1.00"0.050 Detail A 0.686"0.050 0.625 9.70"0.025 1.016"0.025 5.05"0.050 0.28 Typ. 0.65 Typ. 0.050 0.1 (Ref) 0.457"0.020 0.432"0.020 12_ (8X) Detail A NOTES: 1. Package Surface: Shiny Finish (Ro 0.15 – 0.20). ECN: S-03946—Rev. C, 09-Jul-01 DWG: 5851 Document Number: 71202 06-Jul-01 2. Package Warpage: 0.012 (max). 3. Package Corner Radius: R0.1 mm (max). 4. Top to BTM Cavity Mismatch: 0.037 (max). 5. Tolerance: "0.050 unless otherwise specified. 6. End Flash Max: 0.1016 mm. www.vishay.com 1 Package Information Vishay Siliconix PLCC: 28-LEAD D-SQUARE MILLIMETERS MIN. MAX. A 4.20 4.57 2.29 3.04 A1 0.51 A2 B 0.331 0.553 0.661 0.812 B1 D 12.32 12.57 11.430 11.582 D1 9.91 10.92 D2 1.27 BSC e1 ECN: T09-0766-Rev. D, 28-Sep-09 DWG: 5491 DIM. A2 INCHES MIN. MAX. 0.165 0.180 0.090 0.120 0.020 0.013 0.021 0.026 0.032 0.485 0.495 0.450 0.456 0.390 0.430 0.050 BSC e1 B1 D2 B D1-SQUARE A1 D A Document Number: 71264 28-Sep-09 0.101 mm 0.004" www.vishay.com 1 Package Information www.vishay.com Vishay Siliconix SOIC (WIDE-BODY): 28-LEADS 0.06 0.002D CAVITY NO. 0.3525 0.001 0.334 0.005 28 27 26 25 24 23 22 21 20 19 18 R0.004 17 16 15 0.010 0.1475 0.001 R0.008 0.295 0.001 R0.009 1 2 3 4 5 6 7 8 9 10 11 12 13 14 4° R0.004 2° 0.032 0.005 0.070 0.005 0.055 0.005 DETAIL A PIN 1 INDICATOR 0.047 0.007 0.001 dp SURFACE POLISHED 0.334 0.005 0.291 0.001 0.091 0.001 0.020 45° 0.705 0.001 0.098 0.002 R0.004 0.00825 ± 0.00325 0.041 0.001 0.050 TYP. 0.017 0.0003 7°(4 ) 0.295 0.001 0.406 0.004 DETAIL A All Dimensions In Inches ECN: E11-2209-Rev. D, 01-Aug-11 DWG: 5850 Revision: 01-Aug-11 1 Document Number: 71268 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000