DG2707 Datasheet

DG2707
Vishay Siliconix
High Speed, Low Voltage, 3 , Differential 4:1 CMOS Analog
Multiplexer/Switch
DESCRIPTION
FEATURES
The DG2707 is a high speed, low voltage, 3 , differential
4:1 multiplexer. It operates from a 1.65 V to 4.3 V single
power supply. All channels guaranteed break before make
switching. When powered with single 3.15 V supply, channel
to channel ON Resistance matching is within 0.3 .
•
•
•
•
•
•
All control logic input has 0.5 V to 1.65 V threshold. The EN
pin enables cascading of the multiplexers. It features a
120 MHz - 3 dB bandwidth, - 90 dB crosstalk and - 70 dB
off-isolation at 1 MHz.
Low voltage operation (1.65 V to 4.3 V)
Low on-resistance - RON: 2.8  typ. at 3.15 V
Low voltage logic threshold
Low crosstalk: - 70 dB
High off-isolation: - 90 dB
Ultra small package: miniQFN16 of 1.8 mm x 2.6 mm
APPLICATIONS
•
•
•
•
A/V and analog signal routing
Battery operated devices
Data acquisition systems
Communications systems
• Medical and ATE equipments
The DG2707 comes in a small miniQFN-16 lead package
(1.8 mm x 2.6 mm x 0.75 mm). As a committed partner to
community and the environment, Vishay Siliconix
manufactures this product with the lead (Pb)-free device
terminations and is 100 % RoHS complicant.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
miniQFN-16L
13
S6
14
D2
15
S7
GND
IN2
S4
12
11
10
9
DECODER
EN
S5
16
UXX
1
2
3
4
S8
V+
IN1
S1
Pin 1: LONG LEAD
8
S3
7
D1
6
S2
5
N/C
Top View
Device Marking: UXX
Traceability Code:
U is DG2707DN
XX = Date/Lot
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 85 °C
miniQFN-16
DG2707DN-T1-E4
Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
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1
DG2707
Vishay Siliconix
TRUTH TABLE DG2707 MULTIPLEXER, MINIQFN-16L
Enable Input
Select Input
On Switches (Pin)
EN (Pin 13)
IN2 (Pin 10)
IN1 (Pin 3)
Description (Pin)
0
0
0
S5 (Pin 12)
0
0
1
S6 (Pin 14)
0
1
0
S7 (Pin 16)
0
1
1
S8 (Pin 1)
0
0
0
S1 (Pin 4)
0
0
1
S2 (Pin 6)
0
1
0
S3 (Pin 8)
S4 (Pin 9)
0
1
1
1
X
X
Common (Pin)
D2 (Pin 15)
D1 (Pin 7)
All Switches are off
Pin 5 N/C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Reference to GND
Limit
V+
EN, IN, DX, SXa
Current (Any terminal except SX or DX)
- 0.3 to 5.0
- 0.3 to (V+ + 0.3)
Unit
V
30
Continuous Current (SX or DX)
± 300
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
± 500
Storage Temperature (D Suffix)
mA
- 65 to 150
°C
Thermal Resistance (Package)b
miniQFN-16
152
°C/W
Power Dissipation (Packages)b
miniQFN-16c, d
525
mW
Notes:
a. Signals on SX or DX, or INX or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.6 mW/°C above 70 °C
d. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
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Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
DG2707
Vishay Siliconix
SPECIFICATIONS (V+ = 3.15 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Vanalog
RDS(on)
Limits
- 40 °C to 85 °C
Temp.b Min.d Typ.c Max.d
Unit
Analog Switch
Analog Signal Rangee
Full
0
Room
V+
2.8
On Resistance
RDS(on)
V+ = 3.15 V, ISX = 10 mA, VDX = 1.0 V
RON Match
R(on)
V+ = 3.15 V, ISX = 10 mA, VDX = 1.0 V
Room
0.3
R(on) Flatness
V+ = 3.15 V, ISX = 10 mA, VDX = 0.0 V, 1.0 V
Room
0.6
RON Resistance Flatness
Channel-Off Leakage Current
Channel-On Leakage Current
ISX(off)
IDX(off)
IDX(on)
V+ = 3.6 V, VSX = 0.5 V/3 V, VDX = 3 V/0.5 V
V+ = 3.6 V, VSX, VDX = 3 V/0.5 V
V
5.5
Full
6
Room
-5
5
Full
- 10
10
Room
- 10
10
Full
- 20
20

nA
Digital Control
Input High Voltage
VINH
Input Low Voltage
VINL
Input Current
Input Capacitance
1.65
Full
IINL or IINH
VIN = 0 or V+
CIN
V+ = 3.15, f = 1 MHz
0.4
-1
1
5.1
V
µA
pF
Dynamic Characteristics
Break-Before-Make Time
Enable Turn-On Time
Room
tBBM
Full
Room
tON(EN)
VSX = 1.5 V, RL = 50 , CL = 35 pF
Enable Turn-Off Time
Transition Time
tOFF(EN)
QINJ
Off-Isolationd
OIRR
Crosstalkd, f
XTALK
20
45
15
35
35
55
Full
55
Room
Full
Full
CL = 1 nF, RGEN = 0 , VSX = 2 V
65
Room
V+ = 3.15 V, f = 1 MHz, RL = 50 , CL = 5 pF
Room
ns
45
Room
tTRANS
Charge Injectiond
1
5
- 14
pC
- 70
dB
- 90
Bandwidthd
BW
V+ = 3.15 V, RL = 50 , CL = 5 pF, - 3 dB
Room
120
MHz
Total Harmonic Distortiond
THD
V+ = 3.15 V, Rload = 600 
Room
0.02
%
SX, DX Off Capacitanced
Channel-On Capacitanced
CS(off)
CDX(off)
16
V+ = 3.15 V, f = 1 MHz
Room
42
CDX(on)
pF
49
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.65
VIN = 0 V or V+
Full
4.3
V
1
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
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DG2707
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
20
T = 25 °C
ION = 10 mA
DX
16
14
12
V+ = 1.65 V
10
8
20
- 40 °C
15
+ 25 °C
10
+ 85 °C
6
V+ = 3.15 V
2
0.0
0.5
1.0
1.5
2.0
5
V+ = 3.6 V
4
2.5
3.0
3.5
0
0.0
4.0
0.5
1.5
2.0
VD - Analog Voltage (V)
RON vs. VD and Single Supply Voltage
RON vs. Analog Voltage and Temperature
4.0
V+ = 3.15 V
ION = 10 mA
V+ = 3.15 V
ION = 10 mA
3.5
RON - On-Resistance (Ω)
3.5
+ 85 °C
3.0
+ 25 °C
2.5
- 40 °C
2.0
+ 25 °C
3.0
+ 85 °C
2.5
2.0
- 40 °C
1.5
1.5
1.0
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VD - Analog Voltage (V)
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. Analog Voltage and Temperature
10
10 mA
DG2707
RL = 600 Ω
V Signal = 1 VRMS
1 mA
I+ - Supply Current (A)
1
V+ = 1.65 V
THD (%)
1.0
VD - Analog Voltage (V)
4.0
RON - On-Resistance (Ω)
V+ = 1.65 V
ION = 10 mA
25
R ON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
18
0.1
V+ = 3.15 V
0.01
100 µA
V+ = 3.15 V
10 µA
V+ = 3.6 V
1 µA
100 nA
V+ = 1.65 V
10 nA
V+ = 3.6 V
1 nA
0.00
100 pA
10
100
1000
10000
100000
10
100
1K
10K
100K
1M
10M
Frequency (Hz)
Switching Threshold vs. Supply Voltage
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Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
DG2707
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
10
Loss
0
V+ = 3.15 V
- 20
Loss, OIRR, XTALK (dB)
Leakage Currrent (pA)
- 10
INO/NC(OFF)
100
ICOM(ON)
10
- 30
V+ = 3.15 V
RL = 50 Ω
OIRR
- 40
- 50
- 60
XTalk
- 70
ICOM(OFF)
- 80
- 90
1
- 60 - 40 - 20
0
20
40
60
80
- 100
100K
100 120 140
1M
10M
100M
Temperature (°C)
Frequency (Hz)
Leakage Current vs. Temperature
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
1G
1.5
VT - Switching Threshold (V)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
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DG2707
Vishay Siliconix
TEST CIRCUITS
V+
V
IN1
50 Ω
V+
VS1
S1
S2
S3
S4
IN2
V-
50 %
VIN1,IN2
VS2
0V
VS1 or VS2
50 Ω
90 %
VO
VO
D
ENABLE
GND
tr < 5 ns
tf < 5 ns
VCC
+
50 %
90 %
35 pF
tTRANS
V-
tTRANS
Figure 1. Transition Time
V+
IN1
S1
S2
S3
S4
IN2
50 Ω
GND
VS1
VENABLE
V-
50 %
0V
VS1
D
ENABLE
t r < 5 ns
tf < 5 ns
VCC
V+
VO
50 Ω
90 %
90 %
VO
50 %
35 pF
0V
t ON
V-
t OFF
S1 ON
Figure 2. Enable Switching Time
V+
IN1
50 Ω
V+
V+
VS
S1
S2
S3
S4
IN2
VV
VIN1, IN2
50 %
0V
VS
VO
D
ENABLE
GND
t r < 5 ns
tf < 5 ns
VCC
50 Ω
90 %
VO
35 pF
0V
tBBM
-
Figure 3. Break-Before Make
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Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
DG2707
Vishay Siliconix
TEST CIRCUITS
t r < 5 ns
tf < 5 ns
V+
V+
VCC
IN1
Channel
Select
Rg
VENABLE
IN2
ON
OFF
OFF
0V
Sx
VO
Vg
ENABLE
GND
ΔVO
VO
D
V-
CL
1 nF
Charge Injection = ΔVO X C L
V-
Figure 4. Charge Injection
V+
V+
Network Analyzer
V+
IN1
S1
IN2
V+
Vg
VIN
S4
IN2
Vg
V-
GND
50 Ω
V-
Rg = 50 Ω
VOUT
D
ENABLE
D
V-
V+
IN1
Rg = 50 Ω
VOUT
ENABLE
GND
Network Analyzer
VIN
50 Ω
V-
Insertion Loss = 20 log
Off Isolation = 20 log VOUT
VIN
VOUT
VIN
Figure 5. Insertion Loss
Figure 6. Off-Isolation
V+
V+
Network Analyzer
V
IN1
+
S4
VIN
IN2
Vg
Rg = 50 Ω
Channel
Select
D
50 Ω
V
+
S1
ENABLE
GND
IN1
V+
to
|
VOUT
V-
S1
|
IN2
Impedance
Analyzer
S4
50 Ω
V+
ENABLE
GND
D
V-
VCrosstalk = 20 log
Figure 7. Crosstalk
VOUT
VIN
V-
Figure 8. Source, Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68397.
Document Number: 68397
S11-0176-Rev. B, 07-Feb-11
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Package Information
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Vishay Siliconix
miniQFN-16L
(1)
(2)
(4)
(3)
L1
(12) (11) (10) (9)
(5)
(16)
L
D
(8)
(14)
(7)
(15)
(6)
(16)
(5)
(15)
(6)
(14)
(7)
(13)
(8)
E
(13)
(12) (11) (10) (9)
(1)
(2)
(3)
(4)
b
DIM
e
A
C
A1
BACK SIDE VIEW
MILLIMETERS
INCHES
MIN.
NAM
MAX.
MIN.
NAM
MAX.
A
0.70
0.75
0.80
0.0275
0.0295
0.0315
A1
0
-
0.05
0
-
0.002
b
0.15
0.20
0.25
0.0059
0.0078
0.0098
C
0.15
0.20
0.25
0.0059
0.0078
0.0098
D
2.50
2.60
2.70
0.0984
0.1023
0.1063
E
1.70
1.80
1.90
0.0669
0.0708
0.0748
e
0.40 BSC
0.0157 BSC
L
0.35
0.40
0.45
0.0137
0.0157
0.0177
L1
0.45
0.50
0.55
0.0177
0.0196
0.0216
ECN T16-0234-Rev. B, 09-May-16
DWG: 5954
Revision: 09-May-16
1
Document Number: 74323
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR MINI QFN 16L
0.562
(0.0221)
0.400
(0.0157)
0.225
(0.0089)
1
2.900
(0.1142)
0.463
(0.0182)
1.200
(0.0472)
2.100
(0.0827)
Mounting Footprint
Dimensions in mm (inch)
Document Number: 66557
Revision: 05-Mar-10
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Legal Disclaimer Notice
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
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Document Number: 91000
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