DG213 Datasheet

DG213
Vishay Siliconix
Quad Complementary CMOS Analog Switch
22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—rDS(on): 45 Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: 85 ns
Low Charge Injection—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Low Cost
Industrial Instrumentation
Test Equipment
Communications Systems
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one “T” switch, one DPDT, etc. This
device is fabricated in a Vishay Siliconix’ proprietary
high-voltage silicon gate CMOS process, resulting in lower
on-resistance, lower leakage, higher speed, and lower power
consumption.
This analog switch was designed for a wide variety of general
purpose applications in telecommunications, instrumentation,
process control, computer peripherals, etc. An improved charge
injection compensation design minimizes switching
transients. These switches can handle up to 22 V, and have
an improved continuous current rating of 30 mA. An epitaxial
layer prevents latchup.
All switches feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
For additional information, please refer to Application Note
AN208 (FaxBack document #70606).
IN1
1
16
IN2
Logic
SW1, SW4
D1
2
15
D2
0
OFF
ON
1
ON
OFF
S1
3
14
S2
V–
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Top View
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
SW2, SW3
Logic “0” 0.8 V
Logic “1” 2.4 V
Temp Range
Package
Part Number
16-Pin Plastic DIP
DG213DJ
–40
40 to 85C
16-Pin Narrow SOIC
DG213DY
16-Pin TSSOP
DG213DQ
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4-1
DG213
Vishay Siliconix
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
16-Pin TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/C above 75C
d. Derate 7.6 mW/C above 75C
D Suffix
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Ve
–40 to 85C
Tempa
Minc
Full
V–
Typb
Maxc
Unit
V+
V
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Match
VANALOG
rDS(on)
VD = 10 V,, IS = 1 mA
DrDS(on)
60
Room
Full
45
Room
1
2
85
Source Off Leakage Current
IS(off)
VS = 14 V, VD = 14 V
Room
Full
–0.5
–5
0.01
0.5
5
Drain Off Leakage Current
ID(off)
VD = 14 V, VS = 14 V
Room
Full
–0.5
–5
0.01
0.5
5
Drain On Leakage Current
ID(on)
VS = VD = 14 V
Room
Full
–0.5
–10
0.02
0.5
10
2.4
W
nA
A
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
Input Current
Input Capacitance
IINH or IINL
V
VINH or VINL
CIN
Full
0.8
–1
1
Room
5
VS = 10 V
See Figure
S
Fi
2
Room
85
130
Room
55
100
mA
pF
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time Delay
tD
VS = 10 V, See Figure 3
Room
Charge Injection
Q
CL = 1000 pF, Vg= 0 V, Rg = 0 W
Room
15
1
25
Room
5
Room
5
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
VD = VS = 0 V, f = 1 MHz
Room
16
Off Isolation
OIRR
90
XTALK
CL = 15 p
pF,, RL = 50 W
VS = 1 VRMS, f = 100 kH
kHz
Room
Channel-to-Channel Crosstalk
Room
95
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4-2
VS = 0 V, f = 1 MHz
ns
pC
F
pF
dB
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
DG213
Vishay Siliconix
D Suffix
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Ve
–40 to 85C
Tempa
Minc
Typb
Maxc
Unit
Power Supply
Positive Supply Current
Room
Full
I+
VIN = 0 or 5 V
Negative Supply Current
I–
Room
Full
Logic Supply Current
IL
Room
Full
VOP
Full
Power Supply Range for
Continuous Operation
1
5
–1
–5
mA
A
1
5
3
22
V
Typb
Maxc
Unit
D Suffix
Test Conditions
Unless Otherwise Specified
Parameter
–40 to 85C
V+ = 12 V, V– = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minc
VANALOG
Full
V–
V+
V
rDS(on)
VD = 3 V, 8 V, IS = 1 mA
Room
Full
90
110
140
W
Room
125
200
45
100
Symbol
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
Dynamic Characteristics
Turn-On Time
tON
See Figure 2
Turn-Off Time
tOFF
Room
Break-Before-Make Time Delay
tD
VS = 8 V, See Figure 3
Room
Charge Injection
Q
CL = 1 nF, Vgen= 6 V, Rgen = 0 W
Room
50
ns
80
4
pC
Power Supply
Positive Supply Current
Room
Full
I+
VIN = 0 or 5 V
Negative Supply Current
I–
Room
Full
Logic Supply Current
IL
Room
Full
VOP
Full
Power Supply Range for
Continuous Operation
1
5
–1
–5
mA
A
1
5
3
40
V
Notes:
a. Room = 25C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
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4-3
DG213
Vishay Siliconix
rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
100
r DS(on)– Drain-Source On-Resistance ( )
r DS(on)– Drain-Source On-Resistance ( )
110
100
90
5 V
80
70
10 V
60
15 V
50
40
20 V
30
20
–8
–4
0
4
8
12
16
80
70
60
125C
85C
50
40
25C
30
–55C
20
10
0
–15
10
–20 –16 –12
V+ = 15 V
V– = –15 V
90
20
–10
–5
rDS(on) vs. VD and Single Power Supply Voltages
10
15
40
V– = 0 V
VL = 5 V
5V
250
V+ = 22 V
V– = –22 V
TA = 25C
30
20
I S,I D – Current (pA)
r DS(on)– Drain-Source On-Resistance ( )
5
Leakage Currents vs. Analog Voltage
300
200
7V
150
10 V
100
12 V
ID(on)
10
IS(off), ID(off)
0
–10
–20
50
–30
0
0
2
4
6
8
10
–40
–20
12
–15
VD – Drain Voltage (V)
–10
–5
0
5
10
15
20
VANALOG – Analog Voltage (V)
QS, QD – Charge Injection vs. Analog Voltage
Leakage Current vs. Temperature
30
1 nA
V+ = 15 V
V– = –15 V
VS, VD = 14 V
20
100 pA
Q – Charge (pC)
I S,I D – Current
0
VD – Drain Voltage (V)
VD – Drain Voltage (V)
IS(off), ID(off)
10 pA
10
0
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
–10
–20
1 pA
–55
–35
–15
5
25
45
65
Temperature (C)
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4-4
85
105 125
–30
–15
–10
–5
0
5
10
15
VANALOG – Analog Voltage (V)
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
DG213
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Off Isolation vs. Frequency
120
V+ = +15 V
V– = –15 V
110
100
OIRR (dB)
90
RL = 50 80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
VL
Level
Shift/
Drive
V–
V+
INX
DX
GND
V–
FIGURE 1.
TEST CIRCUITS
+15 V
V+
VS = +2 V
D
S
VO
Logic
Input
3V
tr <20 ns
tf <20 ns
50%
0V
tOFF
IN
3V
GND
V–
CL
35 pF
RL
300 90%
Switch
Output
–15 V
VO = VS
VO
tON
RL
RL + rDS(on)
FIGURE 2. Switching Time
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
www.vishay.com FaxBack 408-970-5600
4-5
DG213
Vishay Siliconix
+5 V
+15 V
3V
Logic
Input
VL
S1
VS1
D1
Switch
Output
IN2
RL1
300 W
V–
GND
90%
VO2
D2
S2
0V
VS1
VO1
VO1
IN1
VS2
50%
V+
RL2
300 W
0V
VS2
VO2
CL1
35 pF
CL2
35 pF
90%
0V
Switch
Output
tD
tD
–15 V
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make
C
+15 V
+15 V
C
V+
S1
VS
V+
S
VS
VO
D
D1
Rg = 50 W
50 W
IN1
Rg = 50 W
0V, 2.4 V
RL
IN
0V, 2.4 V
S2
NC
GND
V–
C
RL
IN2
0V, 2.4 V
GND
Off Isolation = 20 log
XTALK Isolation = 20 log
VO
FIGURE 4. Off Isolation
VO
DVO
VO
D
IN
Vg
VO
CL
1000 pF
3V
GND
–15 V
FIGURE 5. Channel-to-Channel Crosstalk
V+
S
C
VS
+15 V
Rg
V–
C = RF bypass
–15 V
VS
VO
D2
INX
ON
OFF
ON
V–
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
–15 V
FIGURE 6. Charge Injection
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4-6
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
DG213
Vishay Siliconix
+15 V
+5 V
_15 V
VIN1
VOUT
VIN2
CMOS Logic
Input Select
High = VIN1
Low = VIN2
–15 V
CMOS Logic
Gain Select
High = 10x
Low = 1 x
1x
10x
DG213
GND
20 k
180 k
–15 V
FIGURE 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
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4-7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000
Revision: 18-Jul-08
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